406MS8GE中文资料
A M P L I F I E R S - S M T
5
HMC406MS8G / 406MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 6.0 GHz
v04.0307
General Description
Features
Functional Diagram The HMC406MS8G & HMC406MS8GE are high effi -ciency GaAs InGaP Heterojunction Bipolar Transistor
(HBT) MMIC Power amplifi ers which operate between 5.0 and 6.0 GHz. The amplifi er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifi er pro-vides 17 dB of gain and +29 dBm of saturated power at 38% PAE from a +5.0V supply voltage. Vpd can be used for full power down or RF output power/current control.
Gain: 17 dB
Saturated Power: +29 dBm 38% PAE
Supply Voltage: +5.0 V Power Down Capability
Low External Part Count
Electrical Specifications, T A = +25° C, Vs = 5V, Vpd = 5V
Typical Applications
This amplifi er is ideal for use as a driver
amplifi er for 5.0 - 6.0 GHz applications:? UNII
? HiperLAN & 802.11a WLAN
A M P L I F I E R S - S M T
5
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
Broadband Gain & Return Loss
Gain vs. Temperature
P1dB vs. Temperature
Psat vs. Temperature
-25
-20-15-10-5
051015203
4
5
6
7
8
R E S P O N S E (d B )
FREQUENCY (GHz)
141618202224
26283032344.5
5
5.5
6
6.5
P s a t (d B m )
FREQUENCY (GHz)
1416182022
2426283032344.5
5
5.5
6
6.5
P 1d B (d B m )
FREQUENCY (GHz)
-15-10
-5
4.5
5 5.5
6 6.5
R E T U R N L O S S (d B )
FREQUENCY (GHz)
-30-25-20
-15-10-504.5
5 5.5
6
6.5
R E T U R N L O S S (d B )
FREQUENCY (GHz)
2
46810121416
1820224.5
5
5.5
6
6.5
G A I N (d B )
FREQUENCY (GHz)
HMC406MS8G / 406MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 6.0 GHz
v04.0307
A M P L I F I E R S - S M T
5
Power Compression @ 5.8 GHz
Output IP3 vs. Temperature
Noise Figure vs. Temperature
Gain & Power vs. Supply Voltage
Reverse Isolation vs. Temperature
Gain, Power & Quiescent
Supply Current vs. Vpd @ 5.8 GHz
4.75
5
5.25
G A I N d B )
Vcc SUPPLY VOLTAGE (Vdc)
01234567
89104.5
5
5.5
6
6.5
N O I S E F I G U R E (d B )
FREQUENCY (GHz)
2.5
3
3.5
4
4.5
5
G A I N (d B ), P 1d B (d B m ), P s a t (d B m )
Icq (mA)
Vpd (Vdc)
-60-50-40-30-20-1004.5
5 5.5
6 6.5
I S O L A T I O N (d B )
FREQUENCY (GHz)
14161820222426283032343638404244
4.5
5 5.5
6 6.5
O I P 3 (d B m )
FREQUENCY (GHz)
061218243036420
2
4
6
8
10
12
14
16
18
P o u t (d B m ), G A I N (d B ), P A E (%)
INPUT POWER (dBm)
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 6.0 GHz
v04.0307
HMC406MS8G / 406MS8GE
A M P L I F I E R S - S M T
5
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
[1] Max peak refl
ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX
Package Information
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 6.0 GHz
v04.0307
HMC406MS8G / 406MS8GE
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
A M P L I F I E R S - S M T
5
Pin Descriptions
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 6.0 GHz
v04.0307
HMC406MS8G / 406MS8GE
A M P L I F I E R S - S M T
5
Evaluation PCB
The circuit board used in the fi nal application should
use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con-nected directly to the ground plane similar to that shown. A suffi cient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
List of Materials for Evaluation PCB 104989
[1]
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 4350
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 6.0 GHz
v04.0307
HMC406MS8G / 406MS8GE
A M P L I F I E R S - S M T
5
Application Circuit
Note 1: C3 should be located < 0.020” from Pin 8 (Vcc)
Note 2: C2 should be located < 0.020” from L1.
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 6.0 GHz
v04.0307
HMC406MS8G / 406MS8GE
A M P L I F I E R S - S M T
5
Notes:
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 6.0 GHz
v04.0307
HMC406MS8G / 406MS8GE