MXP4002AT MXP4002AE MXP4002AF Preliminary Datasheet Oct22-13
Applications:
● Power Supply I D ● DC-DC Converters 252A
● DC-AC Inverters
Features:
● Lead Free
● Low R DS(ON) to Minimize Conductive Loss ● Low Gate Charge for Fast Switching Application ● Optimized V (BR)DSS Ruggedness
Ordering Information
Package Brand
TO220 Pin Definition and Inner Circuit
TO263-2L TO263-3L
Absolute Maximum Ratings
T C =25℃unless otherwise specified
Symbol
Value
Unit
V DSS 40V 25280I DM 1009P D 242W V GS
+/-20V T J and T stg
-55 to 175
℃
Avalanche Characteristics
T C =25℃unless otherwise specified
Symbol
Value
Unit
I AS
Figure 9
A
Thermal Resistance
Symbol
Max
Unit
R θJC 0.62℃/W R θJA
62
℃/W
Thermal Resistance, Junction-to-Ambient
Parameter Thermal Resistance, Junction-to-Case Power Dissipation Single Pulse Avalanche Current
Parameter Operating Junction and Storage Temperature Range
R DS(ON)(MAX)Silicon Limited
V DS 40V 2.0m Ω
Parameter Drain-to-Source Voltage Continuous Drain Current
Package Limited
Park Number A Pulsed Drain Current @V GS =10V Gate-to-Source Voltage
MXP
MXP4002AT I D
MXP4002AF MXP4002AE
E AS ①Single Pulse Avalanche Energy
(V DS =20V, V GS =10V, Rg=25?, L=1mH)200mJ
OFF Characteristics
T J =25℃unless otherwise specified Symbol
Min Typ Max Unit
V (BR)DSS 40--V --1--100
--100--100
ON Characteristics
T J =25℃unless otherwise specified Symbol
Min Typ Max Unit
R DS(ON)- 1.6
2.0m ?V GS(th)
2
-4
V
Dynamic Characteristics
T J =25℃unless otherwise specified Symbol
Min Typ Max Unit
Ciss -8487.6
-Coss -1182.8-Crss -651.6-Qg -136.3-Qgs -36.0-Qgd -23.4-Td(on)-30.7-Tr -81.1-Td(off)-185.7-Tf -
91.3
-Source-Drain Diode Characteristics T J =25℃unless otherwise specified
Symbol
Min
Typ
Max
Unit
V SD -- 1.2V Trr -69.3-ns Qrr
-
66.2
-
nC
Gate-to-Source Charge Total Gate Charge Gate-to-Drain ("Miller") Charge Static Drain-to-Source On-Resistance
I GSS
Gate-to-Source Forward Leakage nA
V GS =+20V Gate-to-Source Reverse Leakage
V GS = -20V
I DSS Drain-to-Source Leakage Current uA V DS =32V, V GS =0V
V DS =32V, V GS =0V, T J =125 ℃
I S =80A, V GS =0V ns
V DD =20V, I D =40A,
V GS =10V, R G =10?, R L =0.5?
V DD =20V, I D =80A, V GS =10V
Test Conditions
Drain-to-Source Breakdown Voltage
V GS =0V, I D =250uA V GS =0V, V DS =20V,
f=1.0MHz Output Capacitance Reverse Transfer Capacitance Parameter pF
Published by MaxPower Semiconductor Inc.
V GS =10V, I D =80A Parameter
Test Conditions
Input Capacitance Test Conditions
Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Is=80A, di/dt=100A/μs
Reverse Recovery Charge
Parameter
Test Conditions
Gate Threshold Voltage
V GS =V DS , I D =250uA
Turn-on Delay Time Rise Time Parameter nC
40V N-Channel MOSFET
40V N-Channel MOSFET
40V N-Channel MOSFET
TO220
Published by MaxPower Semiconductor Inc. UNIT : mm
1. Outline Dimension
Published by MaxPower Semiconductor Inc.
TO263-2L
1. Outline Dimension
TO263-3L
1. Outline Dimension
Published by MaxPower Semiconductor Inc.
UNIT : mm
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Published by MaxPower Semiconductor Inc.