BUK764R0-75C,118;中文规格书,Datasheet资料
1.Product profile
1.1General description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.
1.2Features and benefits
AEC-Q101 compliant Avalanche robust
Suitable for standard level gate drive Suitable for thermally demanding environment due to 175 °C rating
1.3Applications
12 V Motor, lamp and solenoid loads High performance automotive power systems
High performance Pulse Width Modulation (PWM) applications
1.4Quick reference data
BUK764R0-75C
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
Product data sheet
Table 1.Quick reference data Symbol Parameter Conditions
Min Typ Max Unit V DS drain-source voltage T j ≥25°C; T j ≤175°C
--75V I D drain current V GS =10V;T mb =25°C; see Figure 1; see Figure 4[1][2]
--100A P tot
total power dissipation
T mb =25°C;see Figure 2
-
-
333
W
[1]Refer to document 9397 750 12572 for further information.[2]
Continuous current is limited by package.
2.Pinning information
[1]
It is not possible to make a connection to pin 2 of the SOT404 package.
3.Ordering information
Static characteristics
R DSon
drain-source
on-state resistance
V GS =10V; I D =25A; T j =25°C; see Figure 7;see Figure 8
- 3.4
4
m ?
I GSS
gate leakage current V DS =0V;V GS =20V;
T j =25°C -2100nA
Avalanche ruggedness E DS(AL)S
non-repetitive drain-source
avalanche energy
I D =100
A; V sup ≤75V; R GS =50?; V GS =10V; T j(init)=25°C; unclamped
--630
mJ
Table 1.Quick reference data …continued Symbol Parameter Conditions
Min Typ Max Unit Table 2.Pinning information Pin Symbol Description Simplified outline Graphic symbol
1G gate SOT404 (D2PAK)
2D drain [1]3S source
mb
D
mounting base;connected to drain
mb
1
32Table 3.
Ordering information
Type number
Package Name
Description
Version BUK764R0-75C
D2PAK
plastic single-ended surface-mounted package (D2PAK);3 leads (one lead cropped)
SOT404
4.Limiting values
[1]Refer to document 9397 750 12572 for further information.[2]Continuous current is limited by package.[3]Current is limited by power dissipation chip rating.
[4]Maximum value not quoted. Repetitive rating defined in avalanche rating figure.[5]Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.[6]Repetitive avalanche rating limited by an average junction temperature of 170 °C.[7]
Refer to application note AN10273 for further information.
Table 4.Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit V DS drain-source voltage T j ≥25°C; T j ≤175°C -75V V DGR drain-gate voltage R GS =20k ?
-75V V GS gate-source voltage -2020V I D
drain current
T mb =25°C; V GS =10V; see Figure 1; see Figure 4
[1][2]-100A [1][3]-199A T mb =100°C; V GS =10V; see Figure 1
[1][2]
-100A I DM peak drain current T mb =25°C; pulsed; t p ≤10μs;see Figure 4
-797A P tot total power dissipation T mb =25°C; see Figure 2
-333W T stg storage temperature -55175°C T j junction temperature -55
175°C Source-drain diode
I S source current T mb =25°C
[3][1]-199A [3][2]
-100A I SM peak source current pulsed; t p ≤10μs; T mb =25°C -797A Avalanche ruggedness
E DS(AL)S non-repetitive drain-source avalanche energy I D =100A; V sup ≤75V; R GS =50?; V GS =10V; T j(init)=25°C; unclamped -630mJ E DS(AL)R
repetitive drain-source avalanche energy
see Figure 3
[4][5][6][7]-
-
J
5.Thermal characteristics
[1]
Mounted on a printed-circuit board; vertical in still air.
Table 5.Thermal characteristics
Symbol Parameter
Conditions Min Typ Max Unit R th(j-mb)thermal resistance from junction to mounting base --0.45K/W R th(j-a)
thermal resistance from junction to ambient
minimum footprint
[1]
-
50
-
K/W
6.Characteristics
Table 6.Characteristics
Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source
breakdown voltage I D=250μA; V GS=0V; T j=-55°C70--V I D=250μA; V GS=0V; T j=25°C75--V
V GS(th)gate-source threshold
voltage I D=1mA; V DS=V GS; T j=25°C;
see Figure 5; see Figure 6
234V
V GSth gate-source threshold
voltage I D=1mA; V DS=V GS; T j=175°C;
see Figure 5; see Figure 6
1--V
I D=1mA; V DS=V GS; T j=-55°C;
see Figure 5; see Figure 6
-- 4.4V
I DSS drain leakage current V DS=75V;V GS=0V; T j=25°C-0.021μA I GSS gate leakage current V GS=20V; V DS=0V; T j=25°C-2100nA
V GS=-20V;V DS=0V; T j=25°C-2100nA
R DSon drain-source on-state
resistance V GS=10V; I D=25A; T j=175°C;
see Figure 7; see Figure 8
--8.4m?
V GS=10V; I D=25A; T j=25°C;
see Figure 7; see Figure 8
- 3.44m?
I DSS drain leakage current V DS=75V;V GS=0V; T j=175°C--500μA Dynamic characteristics
Q G(tot)total gate charge I D=25A; V DS=60V;V GS=10V;
see Figure 9-142-nC
Q GS gate-source charge-36-nC Q GD gate-drain charge-67-nC V GS(pl)gate-source plateau
voltage
I D=25A; V DS=60V;see Figure 9-5-V
C iss input capacitance V GS=0V;V DS=25V; f=1MHz;
T j=25°C;see Figure 10-874411659pF
C oss output capacitance-9231108pF C rss reverse transfer
capacitance
-579793pF
t d(on)turn-on delay time V DS=30V;R L=1.2?; V GS=10V;
R G(ext)=10?-65-ns
t r rise time-133-ns t d(off)turn-off delay time-146-ns t f fall time-119-ns
L D internal drain
inductance from upper edge of drain mounting base
to centre of die
- 2.5-nH
L S internal source
inductance from source lead to source bonding
pad
-7.5-nH
Source-drain diode
V SD source-drain voltage I S=25A;V GS=0V; T j=25°C;
see Figure 11
-0.85 1.2V
t rr reverse recovery time I S=20A;dI S/dt=-100A/μs; V GS=0V;
V DS=25V -83-ns
Q r recovered charge-155-nC
7.Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)SOT404
Fig 12.Package outline SOT404 (D2PAK)
8.Revision history
Table 7.Revision history
Document ID Release date Data sheet status Change notice Supersedes
BUK764R0-75C v.220110426Product data sheet-BUK764R0-75C_1 Modifications:?The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
?Legal texts have been adapted to the new company name where appropriate.
BUK764R0-75C_120060817Product specification--
分销商库存信息: NXP
BUK764R0-75C,118