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SGM358中文资料

SGM358中文资料
SGM358中文资料

SGM321 SGM358 SGM324

1MHz, 60μA, Rail-to-Rail I/O CMOS Operational Amplifier

ELECTRICAL CHARACTERISTICS : V S = +5V (At R L = 100kΩ connected to Vs/2,and V OUT= Vs/2, unless otherwise noted)

Specifications subject to change without notice.

PACKAGE/ORDERING INFORMATION

MODEL ORDER

NUMBER

PACKAGE

DESCRIPTION

PACKAGE

OPTION

MARKING

INFORMATION

SGM321YC5/TR SC70-5 Tape and Reel, 3000 321

SGM321

SGM321YN5/TR SOT23-5 Tape and Reel, 3000 321

SGM358YS/TR SO-8

Tape and Reel, 2500 SGM358YS

SGM358YMS/TR MSOP-8 Tape and Reel, 3000 SGM358YMS

SGM358

SGM358YP PDIP-8 Tube,

50 SGM358YP

SGM324YS/TR SO-16

Tape and Reel, 2500 SGM324YS

SGM324YTS/TR TSSOP-16 Tape and Reel, 3000 SGM324YTS

SGM324YS14/TR SO-14 Tape and Reel, 2500 SGM324YS14

SGM324

SGM324YTS14/TR TSSOP-14 Tape and Reel, 3000 SGM324YTS14

ABSOLUTE MAXIMUM RATINGS Supply Voltage, V+ to V- . . . . . . . . . . . . . . . . . . . . . 7.5 V Common-Mode Input Voltage

. . . . . . . . . . . . . . . . . . . . (–V S) – 0.5 V to (+V S )+0.5V Storage Temperature Range . . . . . . . . .–65℃ to +150℃Junction Temperature . . . . . . . . . . . . . . . .. . . . . . . .160℃Operating Temperature Range . . . . . . . –45℃ to +85℃Package Thermal Resistance @ T A = 25℃

SC70-5, θJA................................................................ 333/W

℃SOT23-5, θJA.............................................................. 190/W

SO-8, θJA......................................................................125/W

℃MSOP-8, θJA.............................................................. 216/W

SO-16, θJA..................................................................... 82/W

℃TSSOP-16, θJA............................................................ 105/W

℃Lead Temperature Range (Soldering 10 sec)

.....................................................260℃ESD Susceptibility HBM................................................................................4000V MM....................................................................................400V

NOTES

1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. CAUTION

This integrated circuit can be damaged by ESD. Shengbang Micro-electronics recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

TYPICAL PERFORMANCE CHARACTERISTICS

At T A = +25℃, V S = +5V , and R L = 100k Ω connected to Vs/2,unless otherwise noted.

Small-Signal Step Response Large-Signal Step Response

2μs/div 10μs/div

20m V /d i v

500m V /d i v

G = +1

C L = 100pF R L = 100K ?

G = +1

C L = 100pF R L = 100K ?

TYPICAL PERFORMANCE CHARACTERISTICS At T A = +25℃, V S = +5V, and R L = 100kΩconnected to Vs/2,unless otherwise noted.

TYPICAL PERFORMANCE CHARACTERISTICS

At T A = +25℃, V S = +5V , and R L = 100k Ω connected to Vs/2,unless otherwise noted.

Overload Recovery Time

Time(2μs/div)

Vs = 5V G = -5 V IN

= 500mV 2.5V

0V 500mV

0V

APPLICATION NOTES

Driving Capacitive Loads

The SGM3XX can directly drive 250pF in unity-gain without oscillation. The unity-gain follower (buffer) is the most sensitive configuration to capacitive loading. Direct capacitive loading reduces the phase margin of amplifiers and this results in ringing or even oscillation. Applications that require greater capacitive drive capability should use an isolation resistor between the output and the capacitive load like the circuit in Figure 1. The isolation resistor R ISO and the load capacitor C L form a zero to increase stability. The bigger the R ISO resistor value, the more stable V OUT will be. Note that this method results in a loss of gain accuracy because R ISO forms a voltage divider with the R LOAD.

V IN V OUT

Figure 1. Indirectly Driving Heavy Capacitive Load

An improvement circuit is shown in Figure 2, It provides DC accuracy as well as AC stability. R F provides the DC accuracy by connecting the inverting signal with the output, C F and R Iso serve to counteract the loss of phase margin by feeding the high frequency component of the output signal back to the amplifier’s inverting input, thereby preserving phase margin in the overall feedback loop.

V IN V OUT

Figure 2. Indirectly Driving Heavy Capacitive Load with DC Accuracy

For no-buffer configuration, there are two others ways to increase the phase margin: (a) by increasing the amplifier’s gain or (b) by placing a capacitor in parallel with the feedback resistor to counteract the parasitic capacitance associated with inverting node. Power-Supply Bypassing and Layout The SGM3XX family operates from either a single +2.5V to +5.5V supply or dual ±1.25V to ±2.75V supplies. For single-supply operation, bypass the power supply V DD with a 0.1μF ceramic capacitor which should be placed close to the V DD pin. For dual-supply operation, both the V DD and the V SS supplies should be bypassed to ground with separate 0.1μF ceramic capacitors. 2.2μF tantalum capacitor can be added for better performance.

Vn

Vp

V SS

V SS(GND)

Figure 3. Amplifier with Bypass Capacitors

Typical Application Circuits Differential Amplifier

The circuit shown in Figure 4 performs the difference function. If the resistors ratios are equal ( R4 / R3 = R2 / R1 ), then

V OUT = ( Vp – Vn ) × R2 / R1 + Vref.

Vn Vp

OUT Figure 4. Differential Amplifier

Instrumentation Amplifier

The circuit in Figure 5 performs the same function as that in Figure 4 but with the high input impedance.

Vn Vp

V OUT Figure 5. Instrumentation Amplifier

Low Pass Active Filter

The low pass filter shown in Figure 6 has a DC gain of ( - R2 / R1 ) and the –3dB corner frequency is 1/2πR2C. Make sure the filter is within the bandwidth of the amplifier. The Large values of feedback resistors can couple with parasitic capacitance and cause undesired effects such as ringing or oscillation in high-speed amplifiers. Keep resistors value as low as possible and consistent with output loading consideration.

V IN

V OUT

Figure 6. Low Pass Active Filter

PACKAGE OUTLINE DIMENSIONS SC70-5

PACKAGE OUTLINE DIMENSIONS SOT23-5

PACKAGE OUTLINE DIMENSIONS SO-8

PACKAGE OUTLINE DIMENSIONS MSOP-8

PACKAGE OUTLINE DIMENSIONS PDIP-8

PACKAGE OUTLINE DIMENSIONS SO-14

PACKAGE OUTLINE DIMENSIONS SO-16

PACKAGE OUTLINE DIMENSIONS TSSOP-14

PACKAGE OUTLINE DIMENSIONS TSSOP-16

REVISION HISTORY

Location Page 11/06— Data Sheet changed from REV.A to REV.B

Changes to ABSOLUTE MAXIMUM ATINGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . 3 04/07— Data Sheet changed from REV.B to REV.C

Adds Output Voltage Swing from Rail test condition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . 2

06/07— Data Sheet changed from REV.C to REV. D

Adds SO-14 and TSSOP-14 Packages . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . .. . .1, 3, 14, 16

Shengbang Microelectronics Co, Ltd

Unit 3, ChuangYe Plaza

No.5, TaiHu Northern Street, YingBin Road Centralized Industrial Park

Harbin Development Zone

Harbin, HeiLongJiang 150078

P.R. China

Tel.: 86-451-84348461

Fax: 86-451-84308461

https://www.wendangku.net/doc/b111527989.html,

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