当前位置：文档库 › 光耦PS2701英文数据手册

光耦PS2701英文数据手册

DATA SHEET

The information in this document is subject to change without notice.

1988

Document No. P11306EJ6V0DS00 (6th edition)

Date Published December 1997 NS CP (K)Printed in Japan

PHOTOCOUPLER

PS2701-1,PS2701-2,PS2701-4

HIGH ISOLATION VOLTAGE SOP MULTI PHOTOCOUPLER

The mark shows major revised points.

?NEPOC TM

Series ?

DESCRIPTION

The PS2701-1, PS2701-2, PS2701-4, are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor.

This package is SOP (Small Outline Package) type and has shield effect to cut off ambient light.It is designed for high density mounting applications.

FEATURES

?High isolation voltage (BV = 3 750 Vr.m.s.)?SOP (Small Outline Package) type

?High-speed switching (t r = 3 μs TYP., t f = 5 μs TYP.)

?Ordering number of taping product (only 1-channel type) : PS2701-1-E3, E4, F3, F4?UL approved: File No. E72422 (S)?VDE0884 approved (Option)

APPLICATIONS

?Hybrid IC

?Measuring instruments ?Power supply

?Programmable logic controllers

ORDERING INFORMATION

Part Number Package Safety Standard Approval

PS2701-14-pin SOP Standard products PS2701-28-pin SOP ? UL approved

PS2701-416-pin SOP PS2701-1-V 4-pin SOP VDE0884 approved products (Option)

PS2701-2-V 8-pin SOP PS2701-4-V

16-pin SOP

PACKAGE DIMENSIONS (in millimeters)

PS2701-1

4.5 MAX.

7.0±0.34.4

1.3

0.5±0.3

0.15+0.10

–0.05

TOP VIEW

1. Anode

2. Cathode

3. Emitter

4. Collector

2.0

0.1±0.1

2.3 M A X .

2.54 1.2 MAX.0.4+0.10–0.05

0.25 M

PS2701-2

9.3 MAX.

2.0

0.1±0.1

2.3 M A X .

2.54

1.2 MAX.

0.4+0.10–0.05

0.25 M

TOP VIEW

1. 3. Anode

2. 4. Cathode 5. 7. Emitter 6. 8. Collector

7.0±0.34.4

1.3

0.5±0.3

0.15+0.10–0.05

PS2701-4

19.46 MAX.

TOP VIEW

1. 3. 5. 7. Anode

2. 4. 6. 8. Cathode 9. 11. 1

3. 15. Emitter 10. 12. 1

4. 16. Collector

12345678

2.0

0.1±0.1

2.3 M A X .

2.54

1.2 MAX.

0.4+0.10–0.050.25 M

7.0±0.34.4

1.3

0.5±0.3

0.15+0.10–0.05

ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise specified)

Parameter Symbol Ratings Unit

PS2701-1PS2701-2,

PS2701-4

Diode Forward Current (DC)I F50mA

Reverse Voltage V R6V

Power Dissipation Derating?P D/°C0.8mW/°C

Power Dissipation P D80mW/ch

Peak Forward Current*1I FP1A

Transistor Collector to Emitter Voltage V CEO40V

Emitter to Collector Voltage V ECO6V

Collector Current I C80mA/ch

Power Dissipation Derating?P C/°C 1.5 1.2mW/°C

Power Dissipation P C150120mW/ch

Isolation Voltage*2BV 3 750Vr.m.s.

Operating Ambient Temperature T A–55 to +100°C

Storage Temperature T stg–55 to +150°C

*1PW = 100 μs, Duty Cycle = 1 %

*2AC voltage for 1 minute at T A = 25 °C, RH = 60 % between input and output

ELECTRICAL CHARACTERISTICS (T A = 25 °C)

Parameter

Symbol Conditions MIN.TYP.MAX.Unit Diode

Forward Voltage V F I F = 5 mA 1.1

1.4V

Reverse Current I R V R = 5 V

μA Terminal Capacitance

C t V = 0 V, f = 1 MHz 30

Transistor Collector to Emitter Current

I CEO I F = 0 mA, V CE = 40 V 100

nA Coupled

Current Transfer Ratio *1

CTR I F = 5 mA, V CE = 5 V 50

100

300%Collector Saturation Voltage

V CE (sat)I F = 10 mA, I C = 2 mA 0.3

V Isolation Resistance R I-O V I-O = 1 kV DC

Isolation Capacitance C I-O V = 0 V, f = 1 MHz

0.4pF

Rise Time *2

t r V CC = 5 V, I C = 2 mA, R L = 100 ?

3μs

Fall Time

t f

*1CTR rank (only PS2701-1)

P: 150 to 300 (%)L: 100 to 300 (%)M: 50 to 150 (%)*2Test circuit for switching time

PW = 100 s,Duty cycle = 1/10

Pulse input

V CC

V OUT

R L = 100 ?

50 ?

I F

TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise specified)

10050

25075255075100Ambient Temperature T A (?C)D i o d e P o w e r D i s s i p a t i o n P D (m W )

DIODE POWER DISSIPATION vs.AMBIENT TEMPERATURE

200

150

100

025*******

Ambient Temperature T A (?C)

T r a n s i s t o r P o w e r D i s s i p a t i o n P C (m W )

TRANSISTOR POWER DISSIPATION vs.AMBIENT TEMPERATURE

PS2701-11.5 mW/?C

PS2701-2,PS2701-41.2 mW/?C

50200403010

610

248Collector to Emitter Voltage V CE (V)

C o l l e c t o r C u r r e n t I C (m A )

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

I F = 30 mA

20 mA

10 mA

15 mA

5 mA

100

0.1

0.01

0.6

1.0 1.4 1.60.8 1.2Forward Voltage V F (V)F o r w a r d C u r r e n t I F (m A )

FORWARD CURRENT vs.FORWARD VOLTAGE

+25 ?C 0 ?C –25 ?C –55 ?C

T A = +100 ?C

+75 ?C +50 ?C

10 0000.1

100

1 000101

–6004080–40

–202060100

Ambient Temperature T A (?C)COLLECTOR TO EMITTER DARK

CURRENT vs. AMBIENT TEMPERATURE

C o l l e c t o r t o E m i t t e r

D a r k C u r r e n t I C

E O (n A )

V CE = 40 V

24 V 10 V

50.1100.50.2

210.20.6 1.0

0.0

0.40.8Collector Saturation Voltage V CE (sat) (V)

C o l l e c t o r C u r r e n t I C (m A )

COLLECTOR CURRENT vs.

COLLECTOR SATURATION VOLTAGE

I F = 25 mA

10 mA 5 mA 2 mA 1 mA

1.2

0.60.0

0.81.00.40.20

100

–50

–25

Ambient Temperature T A (?C)

NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE

N o r m a l i z e d C u r r e n t T r a n s f e r R a t i o C T R

Normalized to 1.0 at T A = 25 ?C,

I F = 5 mA, V CE = 5 V

,,,,,,,,,,,,,,,,

300250150500

2001000.050.5550

0.1

110Forward Current I F (mA)

C u r r e n t T r a n s f e r R a t i o C T R (%)

CURRENT TRANSFER RATIO vs.FORWARD CURRENT

V CE = 5 V

Load Resistance R L (?)SWITCHING TIME vs.LOAD RESISTANCE

S w i t c h i n g T i m e t ( s )

μV CC = 5 V,

I C = 2 mA 1000.5

0.150105

150

200 1 k 2 k

100500Load Resistance R L (?)SWITCHING TIME vs.LOAD RESISTANCE

S w i t c h i n g T i m e t ( s )

μt on t off

t d

t s

1.20.40.00.80.60.2

1.020500

5102002

50100Frequency f (kHz)

N o r m a l i z e d G a i n G V

FREQUENCY RESPONSE

R L = 1 k ?

510 ?300 ?100 ?

1.21.00.0

0.40.20.80.61021031104105106

Time (Hr)

LONG TERM CTR DEGRADATION

C T R (R e l a t i v e V a l u e )

I F = 1 mA, T A = 25 ?C I F = 5 mA, T A = 25 ?C I F = 20 mA, T A = 25 ?C I F = 20 mA, T A = 60 ?C

I F = 5 mA, V CC = 5 V, CTR = 169 %1 000

0.5100

5001015050.1100

1 k 10 k 50 k 500 5 k 100 k t f t s

t r t d

Remark The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed.

TAPING SPECIFICATIONS (in millimeters)

Outline and Dimensions (Tape)

1.55±0.1

2.0±0.14.0±0.1

1.55±0.1

1.75±0.1

5.5±0.1

12.0±0.2

4.6±0.1

2.4±0.1

7.4±0.1

0.3

8.0±0.1

Tape Direction

PS2701-1-E3PS2701-1-F3

PS2701-1-E4PS2701-1-F4

Outline and Dimensions (Reel)

Packing: PS2701-1-E3, E4 900 pcs/reel

PS2701-1-F3, F4 3 500 pcs/reel

1.5±0.5

120

2.0±0.5

6.0±1

21.0±0.8

φ60

12.4+2.0–0.0

18.4 MAX.

1.5±0.1

φ13.0±0.5

φP S 2701-1-E 3, E 4: 178P S 2701-1-F 3, F 4: 330

φφ

RECOMMENDED SOLDERING CONDITIONS

(1) Infrared reflow soldering ?Peak reflow temperature

235 °C (package surface temperature)?Time of temperature higher than 210 °C 30 seconds or less ?Number of reflows Three

?Flux

Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)

60 to 90 s (preheating)

210 ?C

120 to 160 ?C

P a c k a g e S u r f a c e T e m p e r a t u r e T (?C )

Time (s)

(heating)to 10 s

to 30 s

235 ?C (peak temperature)Recommended Temperature Profile of Infrared Reflow

Peak temperature 235 ?C or below

Caution Please avoid to removed the residual flux by water after the first reflow processes.

(2) Dip soldering ?Temperature 260 °C or below (molten solder temperature)?Time

10 seconds or less ?Number of times One

?Flux

Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)

SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)

Parameter Symbol Speck Unit Application classification (DIN VDE 0109)

for rated line voltages ≤ 300 Vr.m.s.IV

for rated line voltages ≤ 600 Vr.m.s.III

Climatic test class (DIN IEC 68 Teil 1/09.80)55/100/21

Dielectric strength

Maximum operating isolation voltage U IORM710V peak

Test voltage (partial discharge test, procedure a for type test and random test)U pr850V peak

U pr = 1.2 × U IORM, P d < 5 pC

U pr 1 140V peak

Test voltage (partial discharge test, procedure b for random test)

U pr = 1.6 × U IORM, P d < 5 pC

Highest permissible overvoltage U TR 6 000V peak

Degree of pollution (DIN VDE 0109)2

Clearance distance> 5mm Creepage distance> 5mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1)CTI175

Material group (DIN VDE 0109)III a

Storage temperature range T stg–55 to +150°C Operating temperature range T A–55 to +100°C

Isolation resistance, minimum value

V IO = 500 V dc at T A = 25 °C Ris MIN.1012?

V IO = 500 V dc at T A MAX. at least 100 °C Ris MIN.1011?

Safety maximum ratings

(maximum permissible in case of fault, see thermal derating curve)

Package temperature Tsi150°C

Current (input current I F, Psi = 0)Isi200mA

Power (output or total power dissipation)Psi300mW

Isolation resistance

V IO = 500 V dc at T A = 175 °C (Tsi)Ris MIN.109?

[MEMO] 10

[MEMO]

CAUTION

Within this device there exists GaAs (Gallium Arsenide) material which is a

harmful substance if ingested. Please do not under any circumstances break the

hermetic seal.

NEPOC is a trademark of NEC Corporation.

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.

NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.

While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.

NEC devices are classified into the following three quality grades:

"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic

equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.

Anti-radioactive design is not implemented in this product.

M4 96. 5