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IRG4BC15UD-L中文资料

IRG4BC15UD-S IRG4BC15UD-L

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

V CES = 600V

V CE(on) typ. = 2.02V

@V GE = 15V, I C = 7.8A

Thermal Resistance

UltraFast CoPack IGBT

Benefits

https://www.wendangku.net/doc/bb18539455.html, 1

? UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching

? IGBT Co-packaged with ultra-soft-recovery antiparallel diode

? Industry standard D 2Pak & TO-262 packages

? Best Value for Appliance and Industrial Applications ? High noise immune "Positive Only" gate drive- Negative bias gate drive not necessary

? For Low EMI designs- requires little or no snubbing ? Single Package switch for bridge circuit applications ? Compatible with high voltage Gate Driver IC's ? Allows simpler gate drive

D 2Pak

IRG4BC15UD-S

TO-262IRG4BC15UD-L

Parameter

Max.

Units

V CES

Collector-to-Emitter Voltage 600V

I C @ T C = 25°C Continuous Collector Current 14I C @ T C = 100°C Continuous Collector Current 7.8I CM Pulsed Collector Current Q

42A

I LM

Clamped Inductive Load Current R 42I F @ T C = 100°C Diode Continuous Forward Current 4.0I FM Diode Maximum Forward Current 16V GE

Gate-to-Emitter Voltage

± 20V P D @ T C = 25°C Maximum Power Dissipation 49P D @ T C = 100°C Maximum Power Dissipation 19

T J Operating Junction and

-55 to +150

T STG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Absolute Maximum Ratings

W Parameter Min.

Typ.

Max.

Units

R θJC Junction-to-Case - IGBT –––––– 2.7R θJC Junction-to-Case - Diode

––––––7.0 °C/W

R θCS Case-to-Sink, flat, greased surface

–––0.50–––R θJA Junction-to-Ambient, typical socket mount U ––––––80R θJA Junction-to-Ambient (PCB Mount, steady state)V ––– –––

40Wt

Weight

–––

2 (0.07)

–––

g (oz)

06/12/01

PD - 94083A

IRG4BC15UD-S/L

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I RMS of fundamental)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

0.1

100

f , Frequency ( kHz )

2.00

6.00

10.00

0.00

4.00

8.00

12.00

L o a d C u r r e n t ( A )

IRG4BC15UD-S/L

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Fig. 4 - Maximum Collector Current vs. Case

Temperature

T J , Junction Temperature (°C)

V C E , C o l l e c t o r -t o E m i t t e r V o l t a g e (V )

IRG4BC15UD-S/L

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

Fig. 9 - Typical Switching Losses vs. Gate

Resistance Fig. 10 - Typical Switching Losses vs.

Junction Temperature

R G , Gate Resistance (?)

0.42

0.44

0.46

0.48

T o t a l S w i t c h i n g L o s s e s (m J

)

T J , Junction Temperature (°C)

T o t a l S w i t c h i n g L o s s e s (m J )

IRG4BC15UD-S/L

0.0

0.4

0.8

1.2

1.6

2.0

T o t a l S w i t c h i n g L o s s e s (m J )

0.0

1.0

2.0

3.0

4.0

5.0

6.0

Forward Voltage D rop - V (V)Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

IRG4BC15UD-S/L

Fig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt,

Fig. 14 - Typical Reverse Recovery vs. di f /dt

Fig. 15 - Typical Recovery Current vs. di f /dt

d i (r

e c ) M /d t - (A /μs )

Q r r - (n C )

I r r - ( A )

t r r - (n C )

2025

100

1000

di /dt - (A/μs)

100

1000

di /dt - (A/μs)0

80120

160

200

100

1000

di /dt - (A/μs)

100

1000

100

1000

di /dt - (A/μs)

IRG4BC15UD-S/L

Fig. 18a - Test Circuit for Measurement of

I LM , E on , E off(diode), t rr , Q rr , I rr , t d(on), t r , t d(off), t f

t1t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

E off , t d(off), t f

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E on , t d(on), t r

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining E rec , t rr , Q rr , I rr

IRG4BC15UD-S/L

Vg GATE SIG NAL

DEVICE UNDER TEST

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

t0t1t2

Figure 19. Clamped Inductive Load Test Circuit

Figure 20. Pulsed Collector Current

Test Circuit

480V

4 X I C @25°C

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

IRG4BC15UD-S/L

D 2Pak Package Outline

D 2Pak Part Marking Information

10.16 (.400) RE F.

6.47 (.255)6.18 (.243)

2.61 (.103)2.32 (.091)

8.89 (.350) RE F.

- B -1.32 (.052)1.22 (.048)

2.79 (.110)2.29 (.090)

1.39 (.055)1.14 (.045)

5.28 (.208)4.78 (.188)

4.69 (.185)4.20 (.165)

10.54 (.415)10.29 (.405)

- A -2

1 3

15.49 (.610)14.73 (.580)

0.93 (.037)0.69 (.027)

5.08 (.200)

1.40 (.055)1.14 (.045)1.78 (.070)1.27 (.050)

1.40 (.055) M AX.

NO TE S:

1 DIM ENS IONS A FTER SOLDER DIP.

2 DIM ENS IONING & TOLE RA NCING PE R A NS I Y14.5M , 1982.

3 CONTROLLING DIM

ENSION : INCH.

4 HE ATSINK & LEA D DIM ENS IONS DO NOT INCLUDE B URRS.

0.55 (.022)0.46 (.018)

0.25 (.010) M B A M

M INIMUM RE COM ME NDE D F OOTP RINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)2.08 (.082) 2X

LE A D A SS IGNME NTS 1 - GA TE 2 - DRAIN 3 - S OURCE

2.54 (.100) 2X

T N UM B ER

IN TER NA RE CTIFIE R LO G O DATE C OD E (YYW W )YY = YEAR W W = W EE K

A S SEM BLY LO T CO DE

IRG4BC15UD-S/L

TO-262 Package Outline

IRG4BC15UD-S/L

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR ’

s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at https://www.wendangku.net/doc/bb18539455.html, for sales contact information .06/01

D 2Pak Tape & Reel Information

TR R

F E E D D IR E C TIO N

1.85 (.073)

1.65 (.065) 1.60 (.063)1.50 (.059)

4.10(.161)3.90(.153)

TR L

F E ED D IR E C TIO N 10.90(.429)10.70(.421)

16.10 (.634)15.90 (.626)

1.75 (.069)1.25 (.049)

11.60 (.457)11.40 (.449)

15.42 (.609)15.22 (.601)

4.72 (.136)4.52 (.178)

24.30(.957)23.90(.941)

0.368 (.0145)0.342 (.0135)

1.60 (.063)1.50 (.059)

13.50 (.532)12.80 (.504)330.00(14.173) M AX.

27.40 (1.079)23.90 (.941)

60.00 (2.362) MIN.

30.40 (1.197) M AX.

26.40 (1.039)24.40 (.961)

NO T ES :

1. C OM F OR MS TO EIA-418.

2. C ON TR O LLING DIM ENS IO N: M ILLIM ETER.

3. D IME NSIO N M EAS URE D @ HUB.

4. IN CLU DE S F LAN GE DISTO RT IO N @O U TER E DG E.

Notes:

Q Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature.

R V CC =80%(V CES ), V GE =20V, L=10μH, R G = 75?S Pulse width ≤ 80μs; duty factor ≤ 0.1%.T Pulse width 5.0μs, single shot.U This only applies to TO-262 package.

V This applies to D 2Pak, when mounted on 1" square PCB

( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.