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SIE860DF中文资料

Vishay Siliconix

SiE860DF

SIE860DF中文资料

N-Channel 30-V (D-S) MOSFET

FEATURES

?TrenchFET ? Gen III Power MOSFET

?Ultra Low Thermal Resistance Using

Top-Exposed PolarPAK ? Package for Double-Sided Cooling

?Leadframe-Based New Encapsulated Package

- Die Not Exposed

- Same Layout Regardless of Die Size

?Low Q gd /Q gs Ratio Helps Prevent Shoot-Through ?100 % R g and UIS Tested

APPLICATIONS

?VRM, POL

?DC/DC Conversion

?Synchronous Rectification ?Server

PRODUCT SUMMARY

V DS (V)R DS(on) (Ω)e I D (A)

Q g (Typ.)Silicon Limit Package

Limit 30

0.0021 at V GS = 10 V 178

SIE860DF中文资料

60a 34 nC

0.0028 at V GS = 4.5 V

154

60a

Package Drawing

http://www.wendangku.net/doc/c06bdcc7a1c7aa00b52acb18.html/doc?68796

SIE860DF中文资料

For Related Documents

http://www.wendangku.net/doc/c06bdcc7a1c7aa00b52acb18.html/ppg?68786

Notes:

a.Package limited at 60 A.

b.Surface Mounted on 1" x 1" FR4 board.

SIE860DF中文资料

c.t = 10 s.

d.See Solder Profile (http://www.wendangku.net/doc/c06bdcc7a1c7aa00b52acb18.html/ppg?73257). The PolarPAK is a leadless packag

e. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.

e.Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage V DS 30

V

Gate-Source Voltage

V GS ± 20Continuous Drain Current (T J = 150 °C)T C = 25 °C

I D 178 (Silicon Limit)

A 60a (Package Limit)

T C = 70 °C 60a

T A = 25 °C 38b, c

T A = 70 °C 31b, c

Pulsed Drain Current I DM 80

Continuous Source-Drain Diode Current T C = 25 °C I S

60a

T A = 25 °C 4.3b, c

Single Pulse Avalanche Current L = 0.1 mH

I AS 50

Avalanche Energy

E AS 125mJ Maximum Power Dissipation T C = 25 °C P D 104

W

T C = 70 °C

66T A = 25 °C 5.2b, c T A = 70 °C 3.3b, c

Operating Junction and Storage Temperature Range

T J , T stg - 50 to 150°C Soldering Recommendations (Peak Temperature)d, e

260

SIE860DF中文资料

Vishay Siliconix

SiE860DF

Notes:

a.Surface Mounted on 1" x 1" FR4 board.

b.Maximum under Steady State conditions is 68 °C/W.

c.Measured at source pin (on the side of the package).

Notes:

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE RATINGS

Parameter Symbol T ypical Maximum Unit

Maximum Junction-to-Ambient

a, b t ≤ 10 s R thJA 2024°C/W Maximum Junction-to-Case (Drain Top)

Steady State R thJC (Drain)0.9 1.1Maximum Junction-to-Case (Source)

a, c R thJC (Source) 2.7 3.3SPECIFICATIONS T J = 25 °C, unless otherwise noted

Parameter Symbol T est Conditions Min.T yp.Max.Unit

Static

Drain-Source Breakdown Voltage V DS V GS = 0 V , I D = 250 μA

30

V V DS Temperature Coefficient ΔV DS /T J I D = 250 μA

30mV/°C V GS(th) T emperature Coefficient ΔV GS(th)/T J - 6.1

Gate-Source Threshold Voltage V GS(th)V DS = V GS , I D = 250 μA 1.0 2.5V Gate-Source Leakage

I GSS

V DS = 0 V , V GS = ± 20 V ± 100nA Zero Gate Voltage Drain Current I DSS V DS = 30 V , V GS = 0 V

1μA V DS = 30 V, V GS = 0 V , T J = 55 °C

10On-State Drain Current a

I D(on) V DS ≥ 5 V , V GS = 10 V 25

A Drain-Source On-State Resistance a

R DS(on)

V GS = 10 V , I D = 21.7 A 0.00170.0021ΩV GS = 4.5 V , I D = 19 A 0.0023

0.0028

Forward T ransconductance a

g fs V DS = 15 V , I D = 21.7 A

110S

Dynamic

b Input Capacitance C iss

V DS = 15 V , V GS = 0 V , f = 1 MHz 4500pF

Output Capacitance

C oss 850Reverse Transfer Capacitance

C rss 300Total Gate Charge

Q g V DS = 15 V , V GS = 10 V , I D = 20 A 70

105nC

V DS = 15 V , V GS = 4.5 V , I D = 20 A 34

51

Gate-Source Charge

Q gs 14Gate-Drain Charge

Q gd 9Gate Resistance

R g f = 1 MHz 0.9 1.8Ω

Turn-On Delay Time t d(on)

V DD = 15 V , R L = 1.5 Ω I D ? 10 A, V GEN = 4.5 V , R g = 1 Ω3555ns

Rise Time

t r 2030Turn-Off Delay Time t d(off) 5075Fall Time

t f 3045Turn-On Delay Time t d(on)

V DD = 15 V , R L = 1.5 Ω I D ? 10 A, V GEN = 10 V , R g = 1 Ω1625Rise Time

t r 1015Turn-Off Delay Time

t d(off) 4030Fall Time

t f 1015Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I S T C = 25 °C 60A Pulse Diode Forward Current a

I SM 80Body Diode Voltage

V SD I S = 10 A 0.8 1.2V Body Diode Reverse Recovery Time

t rr I F = 10 A, dI/dt = 100 A/μs, T J = 25 °C

3555ns Body Diode Reverse Recovery Charge

Q rr 3045

nC Reverse Recovery Fall Time

t a 21ns

Reverse Recovery Rise Time

t b 14

SIE860DF中文资料

Output Characteristics

SIE860DF中文资料

SIE860DF中文资料

On-Resistance vs. Drain Current

SIE860DF中文资料

SIE860DF中文资料

Gate Charge

Transfer Characteristics

Capacitance

SIE860DF中文资料

Threshold Voltage

SIE860DF中文资料

Safe Operating Area, Junction-to-Ambient

Vishay Siliconix

SIE860DF中文资料

SiE860DF

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Current Derating*

SIE860DF中文资料

SIE860DF中文资料

SIE860DF中文资料

Vishay Siliconix

SiE860DF

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.wendangku.net/doc/c06bdcc7a1c7aa00b52acb18.html/ppg?68786.

SIE860DF中文资料

SIE860DF中文资料

SIE860DF中文资料

Disclaimer Legal Disclaimer Notice

SIE860DF中文资料

Vishay

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

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