BSC090N03MS G中文资料
Value
Unit 48A
BSC090N03MS G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit Power dissipation P tot T C=25 °C32W
T A=25 °C,
R thJA=50 K/W2)
2.5
Operating and storage temperature T j, T stg-55 ... 150°C IEC climatic category; DIN IEC 68-155/150/56
Parameter Symbol Conditions Unit
min.typ.max. Thermal characteristics
Thermal resistance, junction - case R thJC-- 3.9K/W Device on PCB R thJA 6 cm2 cooling area2)--50 Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS V GS=0 V, I D=1 mA30--V Gate threshold voltage V GS(th)V DS=V GS, I D=250 μA1-2
Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V,
T j=25 °C
-0.11μA
V DS=30 V, V GS=0 V,
T j=125 °C
-10100
Gate-source leakage current I GSS V GS=16 V, V DS=0 V-10100nA Drain-source on-state resistance R DS(on)V GS=4.5 V, I D=30 A-9.011.2m?
V GS=10 V, I D=30 A-7.59.0
Gate resistance R G0.51 1.8?
Transconductance g fs |V DS|>2|I D|R DS(on)max,
I D=30 A
2855-S
3)
Value Values
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air.
BSC090N03MS G
Parameter Symbol Conditions Unit
min.typ.max. Dynamic characteristics
Input capacitance C iss-14001900pF Output capacitance C oss-470630 Reverse transfer capacitance C rss-29-
Turn-on delay time t d(on)-9.0-ns Rise time t r- 5.0-
Turn-off delay time t d(off)-8.8-
Fall time t f- 5.4-
Gate Charge Characteristics5)
Gate to source charge Q gs- 4.6 6.1nC Gate charge at threshold Q g(th)- 2.3 3.0
Gate to drain charge Q gd- 2.1 3.5 Switching charge Q sw- 4.4 6.5
Gate charge total Q g-8.912
Gate plateau voltage V plateau- 3.2-V
Gate charge total Q g V DD=15 V, I D=30 A,
V GS=0 to 10 V
-1824
Gate charge total, sync. FET Q g(sync)V DS=0.1 V,
V GS=0 to 4.5 V
-7.710nC
Output charge Q oss V DD=15 V, V GS=0 V-1216 Reverse Diode
Diode continuous forward current I S--29A Diode pulse current I S,pulse--192
Diode forward voltage V SD V GS=0 V, I F=30 A,
T j=25 °C
-0.9 1.1V
Reverse recovery charge Q rr V R=15 V, I F=I S,
d i F/d t=400 A/μs
--10nC T C=25 °C
Values
V GS=0 V, V DS=15 V,
f=1 MHz
V DD=15 V, V GS=4.5 V,
I D=30 A, R G=1.6 ?
V DD=15 V, I D=30 A,
V GS=0 to 4.5 V
BSC090N03MS G Package Outline PG-TDSON-8
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BSC090N03MS G Package Outline
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BSC090N03MS G
Published by
Infineon Technologies AG
81726 München, Germany
? Infineon Technologies AG 2006.
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