MCT5211-X009中文资料

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Optocoupler, Phototransistor Output, Low Input Current, With Base Connection

MCT5210/MCT5211

Vishay Semiconductors

DESCRIPTION

The MCT521/5211 are optocouplers with a high efficiency AIGaAs LED optically coupled to a NPN phototransistor. The high performance LED makes operation at low input currents practical. The coupler is housed in a six pin DIP package.Isolation test voltage is 5300 V RMS .

Because these parts have guaranteed CTRs at 1 mA and 3 mA, they are ideally suitable for interfacing from CMOS to TTL or LSTTL to TTL. They are also ideal for telecommunications applications such as ring or off-hook detection.

FEATURES

?Saturation CTR - MCT5211, > 100 % at I F = 1.6 mA

?High isolation voltage, 5300 V RMS ?Lead (Pb)-free component

?Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

AGENCY APPROVALS

?UL1577, file no. E52744 system code or J,double protection

?BSI IEC 60950; IEC 60065

?DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1?CSA 93751

Note

For additional information on the available options refer to option information.

ORDER INFORMATION

PART REMARKS MCT5210CTR > 70 %, DIP-6MCT5211CTR > 110 %, DIP-6MCT5211-X007CTR > 110 %, SMD-6 (option 7)MCT5211-X009

CTR > 110 %, SMD-6 (option 9)

ABSOLUTE MAXIMUM RATINGS

PARAMETER TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Peak reverse voltage V R 6.0V Forward continuos current I F 40mA Power dissipation P diss

75mW Derate linearly from 25 °C 1.0

mW/°C

OUTPUT

Collector emitter breakdown voltage

BV CEO 30V Emitter collector breakdown voltage

BV ECO 7.0V Collector base breakdown voltage

BV CBO 70V Power dissipation P diss

200mW Derate linearly from 25 °C

2.6

mW/°C

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Document Number: 83657

MCT5210/MCT5211

Vishay Semiconductors Optocoupler, Phototransistor Output,

Low Input Current, With Base Connection

Note

T amb = 25°C, unless otherwise specified.

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.

Note

T amb = 25°C, unless otherwise specified

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

COUPLER

Isolation test voltage

V ISO 5300V RMS Total package dissipation (LED and detector)P tot

260mW Derate linearly from 25 °C 3.5mW/°C Creepage distance ≥ 7mm Clearance distance

≥ 7mm

Comparative tracking index

per DIN IEC 112/VDE 0303, part 1CTI 175Isolation resistance V IO = 500 V, T amb = 25 °C R IO ≥ 1012ΩV IO = 500 V, T amb = 100 °C

R IO ≥ 1011ΩOperating temperature T amp - 55 to + 100°C Storage temperature

T stg

- 55 to + 150

°C ABSOLUTE MAXIMUM RATINGS

PARAMETER TEST CONDITION

SYMBOL

VALUE

UNIT

ELECTRICAL CHARACTERISTICS

PARAMETER TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage I F = 5.0 mA V F 1.2

1.5

V Reverse voltage I R = 10 μA

V R

6.0

V

OUTPUT

DC forward current gain V CE = 5.0 V, I C = 100 μA

h FE 100200Collector emitter breakdown voltage

I C = 100 μA BV CEO 30V Emitter collector breakdown voltage

I E = 100 μA BV ECO 7.0V Collector base breakdown voltage

I E = 10 μA BV CBO 70

V Collector emitter leakage voltage V CE = 10 V

I CEO

5.0

100nA

COUPLER Saturation voltage

I F = 3.0 mA, I C = 1.8 mA MCT5210V CEsat 0.250.4V I F = 1.6 mA, I C = 1.6 mA

MCT5211

V CEsat

0.25

0.4

V

CURRENT TRANSFER RATIO

PARAMETER

TEST CONDITION PART SYMBOL MIN.TYP.MAX.

UNIT Current transfer ratio

(collector emitter saturated)

V CE = 0.4 V, I F = 3.0 mA MCT5210CTR CEsat 60120%V CE = 0.4 V, I F = 1.6 mA MCT5211CTR CEsat 100200%V CE = 0.4 V, I F = 1.0 mA MCT5211CTR CEsat 75150%Current transfer ratio

V CE = 5.0 mA, I F = 3.0 mA

MCT5210CTR 70150%V CE = 5.0 mA, I F = 1.6 mA MCT5211CTR 150300%V CE = 5.0 mA, I F = 1.0 mA

MCT5211CTR 110225%Current transfer ratio (collector base)

V CE = 4.3 V, I F = 3.0 mA MCT5210CTR CB 0.20.4%V CE = 4.3 V, I F = 1.6 mA MCT5211CTR CB 0.30.6%V CE = 4.3 V, I F = 1.0 mA

MCT5211

CTR CB

0.25

0.5

%

Document Number: 83657For technical questions, please contact: optocoupler.answers@https://www.wendangku.net/doc/c53949820.html,

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MCT5210/MCT5211

Optocoupler, Phototransistor Output, Low Input Current, With Base

Connection

Vishay Semiconductors Fig. 1 - Switching Schematic

Fig. 2 - Switching Waveform

TYPICAL CHARACTERISTICS

T amb = 25 °C unless otherwise specified

SWITCHING CHARACTERISTICS

PARAMETER

TEST CONDITION PART SYMBOL MIN.

TYP.MAX.

UNIT Propagation delay high to low

R L = 330 Ω , I F = 3.0 mA,

V CC = 5.0 V

MCT5210t PHL 10μs R L = 750 Ω , I F = 1.6 mA,

V CC = 5.0 V MCT5211t PHL 20μs R L = 1.5 k Ω , I F = 1.0 mA,

V CC = 5.0 V MCT5211t PHL 40μs Propagation delay low to high

R L = 330 Ω , I F = 3.0 mA,

V CC = 5.0 V

MCT5210t PLH 10μs R L = 750 Ω , I F = 1.6 mA,

V CC = 5.0 V MCT5211t PLH 20μs R L = 1.5 k Ω , I F = 1.0 mA,

V CC = 5.0 V

MCT5211

t PLH

40

μs

MCT5210/MCT5211

Vishay Semiconductors Optocoupler, Phototransistor Output,

Low Input Current, With Base Connection

Fig. 5 - Collector Base Photocurrent vs. LED Current

Fig. 7 - Collector Base CTR vs. LED Current Fig. 8 - Collector Base CTR vs. LED Current Fig. 9 - CTR vs. LED Current

Fig. 10 - Collector Current vs. LED Current

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MCT5210/MCT5211 Optocoupler, Phototransistor Output,

Low Input Current, With Base

Connection

Vishay Semiconductors

Fig. 11 - Collector Current vs. LED Current Fig. 12 - Transistor Current Gain vs. Base Current

Fig. 13 - Transfer Curve

Fig. 14 - Transfer Curve

Fig. 15 - Propagation Delay vs. Base Emitter Resistor Fig. 16 - Propagation Delay vs. Base Emitter Resistor

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MCT5210/MCT5211

Vishay Semiconductors Optocoupler, Phototransistor Output,

Low Input Current, With Base Connection Array Fig. 17 - Propagation Delay vs. Base Emitter Resistor

PACKAGE DIMENSIONS in Inches (millimeters)

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MCT5210/MCT5211

Optocoupler, Phototransistor Output,

Vishay Semiconductors

Low Input Current, With Base

Connection

OZONE DEPLETING SUBSTANCES POLICY STATEMENT

It is the policy of Vishay Semiconductor GmbH to

1.Meet all present and future national and international statutory requirements.

2.Regularly and continuously improve the performance of our products, processes, distribution and operating systems with

respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.

1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.

2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency

(EPA) in the USA.

3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

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Disclaimer Legal Disclaimer Notice

Vishay

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

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