SI4925BDY-T1-E3中文资料
FEATURES
D TrenchFET r Power MOSFET D Advanced High Cell Density Process
APPLICATIONS
D Load Switches ?Notebook PCs ?Desktop PCs ?
Game Stations
Pb-free Available
Si4925BDY
Vishay Siliconix
Document Number: 72001S-50366—Rev. C, 28-Feb-05
https://www.wendangku.net/doc/c54015208.html,
1
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V)
r DS(on) (W )
I D (A)
0.025 @ V GS = ?10 V ?7.1?30
0.041 @ V GS = ?4.5 V
?5.5
S 1D 1G 1D 1S 2D 2G 2
D 2
SO-8
5
678Top View
23
4
1
S G 1
1
P-Channel MOSFET
S G 2
2
P-Channel MOSFET
Ordering Information:Si4925BDY
Si4925BDY—T1 (with Tape and Reel)Si4925BDY—E3 (Lead (Pb)-Free)
Si4925BDY -T1—E3 (Lead (Pb)-Free) with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Unit
Drain-Source Voltage V DS ?30Gate-Source Voltage
V GS "20
V
T A = 25_C ?7.1?5.3Continuous Drain Current (T J = 150_C)a T A = 70_C
I D ?5.7
?4.3
Pulsed Drain Current
I DM ?40
A
continuous Source Current (Diode Conduction)a I S ?1.7?0.9Maximum Power Dissipation T A = 25_C 2.0 1.1a
T A = 70_C P D 1.3
0.7
W Operating Junction and Storage Temperature Range
T J , T stg
?55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typical
Maximum
Unit
M i
J ti t A bi t t v 10 sec 5062.5Maximum Junction-to-Ambient a Steady State R thJA 85110_Maximum Junction-to-Foot (Drain)
Steady State
R thJF
30
40
C/W
Notes
a.Surface Mounted on 1 ” x 1” FR4 Board.
Si4925BDY
Vishay Siliconix
https://www.wendangku.net/doc/c54015208.html,
2
Document Number: 72001S-50366—Rev. C, 28-Feb-05
SPECIFICATIONS (T J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage V GS(th)V DS = V GS , I D = ?250 m A ?1
?3V Gate-Body Leakage
I GSS V DS = 0 V, V GS = "20
V "100nA V DS = ?30 V, V GS = 0 V ?1Zero Gate Voltage Drain Current I DSS V DS = ?30 V, V GS = 0 V, T J = 55_
C
?25
m A On-State Drain Current a
I D(on)V DS = ?5 V, V GS = ?10 V ?40
A Drain Source On State Resistance DS()V GS = ?10 V, I D = ?7.1 A 0.0200.025Drain-Source On-State Resistance a r DS(on)V GS = ?4.5 V, I D = ?5.5 A 0.0330.041
W Forward Transconductance a g fs V DS = ?10 V, I D = ?7.1 A 20S Diode Forward Voltage a
V SD
I S = ?1.7 A, V GS = 0 V
?0.8
?1.2V
Dynamic b
Total Gate Charge Q g 3350
Gate-Source Charge Q gs V = ?15 V, V = ?10 V, I = ?7.1 A
5.4nC
Gate-Drain Charge Q gd DS ,GS ,D 8.9Turn-On Delay Time t d(on)915Rise Time
t r V 1220Turn-Off Delay Time t d(off)DD = ?15 V, R L = 15 W
I D ^ ?1 A, V GEN = ?10 V, R G = 6 W 6090Fall Time
t f 3450ns
Source-Drain Reverse Recovery Time
t rr
I F = ?1.7 A, di/dt = 100 A/m s 30
60
Notes
a.Pulse test; pulse width v 300 m s, duty cycle v 2%.
b.Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
010
20
3040
1
2
3
4
5
010
20
30
40
1
2
3
4
5
V DS ? Drain-to-Source Voltage (V)
? D r a i n C u r r e n t (A )
I D V GS ? Gate-to-Source Voltage (V)
? D r a i n C u r r e n t (A )
I D
Si4925BDY
Vishay Siliconix
Document Number: 72001S-50366—Rev. C, 28-Feb-05
https://www.wendangku.net/doc/c54015208.html,
3
r D S (o n ) ?
O n -R e s i i s t a n c e (N o r m a l i z e d )
6
12
18
24
30
0.60.8
1.0
1.2
1.4
1.6
?50
?250255075100125150
0246
8
10
5
10
15
20
25
30
35
40
10
20
30
40
V DS ? Drain-to-Source Voltage (V)
I D ? Drain Current (A)
Gate Charge
? G a t e -t o -S o u r c e V o l t a g e (V )
Q g ? Total Gate Charge (nC)
V G S On-Resistance vs. Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.00
0.02
0.04
0.06
0.08
2
4
6
8
10
50
10
1Source-Drain Diode Forward Voltage
? O n -R e s i s t a n c e (r D S (o n )W )
V SD ? Source-to-Drain Voltage (V)
V GS ? Gate-to-Source Voltage (V)
? S o u r c e C u r r e n t (A )
I S
4S-50366—Rev. C, 28-Feb-05
Si4925BDY
Vishay Siliconix
Document Number: 72001S-50366—Rev. C, 28-Feb-05
https://www.wendangku.net/doc/c54015208.html,
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
21
0.1
0.01
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon T echnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see https://www.wendangku.net/doc/c54015208.html,/ppg?72001.
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Notice
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