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ICS84025EM中文资料

Integrated Circuit

Systems, Inc.

ICS84025

C RYSTAL -TO -LVCMOS / LVTTL

F REQUENCY S YNTHESIZER WITH F ANOUT B UFFER

G ENERAL D ESCRIPTION

The ICS84025 is a Crystal-to-LVCMOS/LVTTL Frequency Synthesizer with Fanout Buffer and

a member of the HiPerClockS? family of High Performance Clock Solutions from ICS. The VCO frequency is programmed in steps equal

to the value of the crystal frequency. The VCO and output frequency can be programmed using the feedback and output frequency select pins. The low phase noise character-istics of the ICS84025 make it an ideal clock source for Fibre Channel 1 and Gigabit Ethernet applications.

B LOCK D IAGRAM P IN A SSIGNMENT

F EATURES

?6 LVCMOS/LVTTL outputs ?Crystal oscillator interface

?Output frequency range: 53.125MHz to 125MHz ?Crystal input frequency: 25MHz and 25.5MHz ?RMS phase jitter at 106.25, using a 25.5MHz crystal (637KHz to 10MHz): 3.25ps ?Phase noise:Offset Noise Power 100Hz .................-100 dBc/Hz 1KHz .................-115 dBc/Hz 10KHz.................-125 dBc/Hz 100KHz.................-127 dBc/Hz

?3.3V core, outputs may either be 3.3V, 2.5V or 1.8V ?0°C to 70°C ambient operating temperature

?Industrial temperature information available upon request

F_SEL1

PLL_SEL

F_SEL0

ICS84025

24-Lead, 300-MIL SOIC

7.5mm x 15.33mm x 2.3mm body package

M Package T op View

V DDO Q0GND Q1V DDO Q2GND Q3V DDO Q4GND Q5

123456789101112

F_SEL0F_SEL1MR XTAL1XTAL2GND V DDA V DD

PLL_SEL GND nc V DDO

242322212019181716151413

F UNCTION T ABLE

t u p n I L

A T X y

c n e u q e r F t u p t u O R M 1L E S _F 0L E S _F T U O _F 1X X W O L 000z H M 5.52z H M 521.35001z H M 5.52z H M 52.601010z H M 52z H M 5.260

z H M 52z

H M 521The Preliminary Information presented herein represents a product in prototyping or pre-production. The noted characteristics are based on initial product characterization. Integrated Circuit Systems, Incorporated (ICS) reserves the right to change any circuitry or specifications without notice.

Integrated Circuit

Systems, Inc.

ICS84025

C RYSTAL -TO -LVCMOS / LVTTL

F REQUENCY S YNTHESIZER WITH F ANOUT B UFFER

T ABLE 1. P IN D ESCRIPTIONS

r e b m u N e m a N e p y T n o i t p i r c s e D 3

1,9,5,1V O D D r e w o P .

s n i p y l p p u s t u p t u O 2

0Q t u p t u O .s l e v e l e c a f r e t n i L T T V L /S O M C V L .t u p t u o k c o l C 9

1,51,11,7,3D N G r e w o P .

d n u o r g y l p p u s r

e w o P 41Q t u p t u O .s l e v e l e c a

f r e t n i L T T V L /S O M C V L .t u p t u o k c o l C 62Q t u p t u O .s l e v e l e c a f r e t n i L T T V L /S O M C V L .t u p t u o k c o l C 83Q t u p t u O .s l e v e l e c a f r e t n i L T T V L /S O M C V L .t u p t u o k c o l C 014Q t u p t u O .s l e v e l e c a f r e t n i L T T V L /S O M C V L .t u p t u o k c o l C 215Q t u p t u O .

s l e v e l e c a f r e t n i L T T V L /S O M C V L .t u p t u o k c o l C 41c n d e s u n U .

t c e n n o c o N 61L E S _L L P t u p n I p

u l l u P t u p n i e h t s a s t u p n i l a t s y r c d n a L L P e h t n e e w t e b s t c e l e S ,W O L n e h W .L L P s t c e l e s ,H G I H n e h W .s r e d i v i d e h t o t .s l e v e l e c a f r e t n i L T T V L /S O M C V L .2L A T X ,1L A T X s t c e l e s 71V D D r e w o P .n i p y l p p u s e r o C 81V A

D D r e w o P .

n i p y l p p u s g o l a n A 12,021

L A T X ,2L A T X t u p n I .t u p t u o e h t s i 2L A T X .t u p n i e h t s i 1L A T X .e c a f r e t n i r o t a l l i c s o l a t s y r C 22R M t u p n I n

w o d l l u P s r e d i v i d l a n r e t n i e h t ,H G I H c i g o l n e h W .t e s e R r e t s a M H G I H e v i t c A e

h t ,W O L c i g o l n e h W .w o l o g o t s t u p t u o e h t g n i s u a c t e s e r e r a .d e l b a n e e r a s t u p t u o e h t d n a s r e d i v i d l a n r e t n i .s l e v e l e c a f r e t n i L T T V L /S O M C V L 321L E S _F t u p n I n w o d l l u P .s l e v e l e c a f r e t n i L T T V L /S O M C V L .n i p t c e l e s y c n e u q e r f k c a b d e e F 4

L E S _F t

u p n I p

u l l u P .

s l e v e l e c a f r e t n i L T T V L /S O M C V L .n i p t c e l e s y c n e u q e r f t u p t u O :E T O N p u l l u P d n a n w o d l l u P .

s e u l a v l a c i p y t r o f ,s c i t s i r e t c a r a h C n i P ,2e l b a T e e S .s r o t s i s e r t u p n i l a n r e t n i o t r e f e r T ABLE 2. P IN C HARACTERISTICS

l o b m y S r e t e m a r a P s

n o i t i d n o C t s e T m

u m i n i M l

a c i p y T m

u m i x a M s t i n U C N I e c n a t i c a p a C t u p n I 4

F p R P U L L U P r o t s i s e R p u l l u P t u p n I 15K ?R N W O D L L U P r o t s i s e R n w o d l l u P t u p n I 15K ?C D

P e c n a t i c a p a C n o i t a p i s s i D r e w o P )

t u p t u o r e p (V D D V ,O D D V 564.3=D B T F p V D D V ,V 564.3=O D D V 526.2=D B T F p V D D V ,V 564.3=O D D V

59.1=D

B T F

Integrated Circuit

Systems, Inc.

ICS84025

C RYSTAL -TO -LVCMOS / LVTTL

F REQUENCY S YNTHESIZER WITH F ANOUT B UFFER

T ABLE 3A. P OWER S UPPLY DC C HARACTERISTICS , V DD = V DDA = 3.3V ± 5%, T A = 0°C TO 70°C

T ABLE 3B. LVCMOS / LVTTL DC C HARACTERISTICS , V DD = V DDA = 3.3V ± 5%, T A = 0°C TO 70°C

l o b m y S r

e t e m a r a P s

n o i t i d n o C t s e T m u m i n i M l a c i p y T m u m i x a M s t i n U V D D e g a t l o V y l p p u S e r o C 531.33.3564.3V V A D D e g a t l o V y l p p u S g o l a n A 531.33.3564.3V V O D D e g a t l o V y l p p u S t u p t u O 531.33.3564.3V 573.25.2526.2V 5

6.18.15

9.1V I D D t n e r r u C y l p p u S r e w o P 17A m I A D D t n e r r u C y l p p u S g o l a n A 51A m I O

D D t

n e r r u C y l p p u S t u p t u O 0

m l o b m y S r e t e m a r a P s

n o i t i d n o C t s e T m

u m i n i M l

a c i p y T m u m i x a M s t i n U V H I e g a t l o V h g i H t u p n I ,R M ,L E S _L L P 1L E S _F ,0L E S _F 2V D D 3.0+V V L I e g a t l o V w o L t u p n I ,R M ,L E S _L L P 1L E S _F ,0L E S _F 3

.0-8.0V I H I t n e r r u C h g i H t u p n I 1L E S _F ,R M V D D V =N I V 564.3=051A μ0L E S _F ,L E S _L L P V D D V =N I V 564.3=5

A μI L

I t

n e r r u C w o L t u p n I 1L E S _F ,R M V D D V ,V 564.3=N I V 0=5-A μ0

L E S _F ,L E S _L L P V D D V ,V 564.3=N I V 0=051-A μV H

O 1

E T O N ;e g a t l o V h g i H t u p t u O V O D D %

5±V 3.3=6.2V V O D D %5±V 5.2=8.1V V O D D V 51.0±V 8.1=V O D D 5

4.0-V V L

O 1

E T O N ;e g a t l o V w o L t u p t u O V O D D %

5±V 3.3=5.0V V O D D %

5±V 5.2=5.0V V O D D V

51.0±V 8.1=5

4.0V

05h t i w d e t a n i m r e t s t u p t u O :1E T O N ?V o t O D D ,n o i t c e S n o i t a m r o f n I t n e m e r u s a e M r e t e m a r a P e e S .2/.

s m a r g a i d "t i u c r i C t s e T d a o L t u p t u O "A BSOLUTE M AXIMUM R ATINGS

Supply Voltage, V DD 4.6V

Inputs, V I -0.5V to V DD + 0.5 V Outputs, V O

-0.5V to V DDO + 0.5V Package Thermal Impedance, θJA 46.2°C/W (0 lfpm)Storage T emperature, T STG

-65°C to 150°C

NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only. Functional operation of product at these conditions or any conditions be-yond those listed in the DC Characteristics or AC Character-istics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability.

T ABLE 4. C RYSTAL C HARACTERISTICS

r e t e m a r a P s n o i t i d n o C t s e T m

u m i n i M l a c i p y T m

u m i x a M s t i n U n o i t a l l i c s O f o e d o M l

a t n e m a d n u F y

c n e u q e r F 5

25.52z H M )R S E (e c n a t s i s e R s e i r e S t n e l a v i u q E 07?e

c n a t i c a p a C t n u h S 7

Integrated Circuit

Systems, Inc.

ICS84025

C RYSTAL -TO -LVCMOS / LVTTL

F REQUENCY S YNTHESIZER WITH F ANOUT B UFFER

T ABLE 5C. AC C HARACTERISTICS , V DD = V DDA = 3.3V ± 5%, V DDO = 1.8V ± 0.15V, T A = 0°C TO 70°C

l o b m y S r e t e m a r a P s

n o i t i d n o C t s e T m u m i n i M l

a c i p y T m u m i x a M s t i n U F T

U O y

c n e u q e r F t u p t u O 5

21.355

21z H M t )c c (t i j 2E T O N ;r e t t i J e l c y C -o t -e l c y C 05s p t )o (k s 2,1E T O N ;w e k S t u p t u O D

B T s p t R t /F e m i T l l a F /e s i R t u p t u O %

08o t %020

030

07s p c d o e l c y C y t u D t u p t u O 0

5%t W

P h

t d i W e s l u P t u p t u O t P D O I R E D

B T -2/t P D O I R E D

B T +2/s

p t K

C O L e m i T k c o L L L P 1s m .

n o i t c e s n o i t a m r o f n I t n e m e r u s a e M r e t e m a r a P e e S V t a d e r u s a e M .s n o i t i d n o c d a o l l a u q e h t i w d n a e g a t l o v y l p p u s e m a s e h t t a s t u p t u o n e e w t e b w e k s s a d e n i f e D :1E T O N O D D .2/.

56d r a d n a t S C E D E J h t i w e c n a d r o c c a n i d e n i f e d s i r e t e m a r a p s i h T :2E T O N T ABLE 5A. AC C HARACTERISTICS , V DD = V DDA = V DDO = 3.3V ± 5%, T A = 0°C TO 70°C

T ABLE 5B. AC C HARACTERISTICS , V DD = V DDA = 3.3V ± 5%, V DDO = 2.5V ± 5%, T A = 0°C TO 70°C

l o b m y S r e t e m a r a P s

n o i t i d n o C t s e T m u m i n i M l

a c i p y T m u m i x a M s t i n U F T

U O y

c n e u q e r F t u p t u O 5

21.355

21z H M t )c c (t i j 2E T O N ;r e t t i J e l c y C -o t -e l c y C 03s p t )o (k s 2,1E T O N ;w e k S t u p t u O D

B T s p t R t /F e m i T l l a F /e s i R t u p t u O %

08o t %020

030

07s p c d o e l c y C y t u D t u p t u O 0

5%t W

P h

t d i W e s l u P t u p t u O t P D O I R E D

B T -2/t P D O I R E D

B T +2/s

p t K

C O L e m i T k c o L L L P 1s m .

56d r a d n a t S C E D E J h t i w e c n a d r o c c a n i d e n i f e d s i r e t e m a r a p s i h T :2E T O N l o b m y S r e t e m a r a P s

n o i t i d n o C t s e T m u m i n i M l

a c i p y T m u m i x a M s t i n U F T

U O y

c n e u q e r F t u p t u O 5

21.355

21z H M t )c c (t i j 2E T O N ;r e t t i J e l c y C -o t -e l c y C 03s p t )o (k s 2,1E T O N ;w e k S t u p t u O D

B T s p t R t /F e m i T l l a F /e s i R t u p t u O %

08o t %020

030

07s p c d o e l c y C y t u D t u p t u O 0

5%t W

P h

t d i W e s l u P t u p t u O t P D O I R E D

B T -2/t P D O I R E D

B T +2/s

p t K

C O L e m i T k c o L L L P 1s m .

56d r a d n a t S C E D E J h t i w e c n a d r o c c a n i d e n i f e d s i r e t e m a r a p s i h T :2E T O N

Integrated Circuit

Systems, Inc.

ICS84025

C RYSTAL -TO -LVCMOS / LVTTL

F REQUENCY S YNTHESIZER WITH F ANOUT B UFFER

T YPICAL P HASE N OISE

25MHz Input

RMS Phase Noise Jitter

12K to 20MHz = 3.5ps (typical)

125MHz

62.5MHz

0-10-20-30-40-50

-60

-70-80-90-100-110-120-130-140-150

0-10-20-30-40-50

-60

-70-80-90-100-110-120-130-140-150

O FFSET F REQUENCY (H Z )

P H A S E N O I S E

d B c )

H Z

O FFSET F REQUENCY (H Z )

P H A S E N O I S E

d B c )

H Z

100

1k 10k 100k 1M 10M

Integrated Circuit

Systems, Inc.

ICS84025

C RYSTAL -TO -LVCMOS / LVTTL

F REQUENCY S YNTHESIZER WITH F ANOUT B UFFER

P ARAMETER M EASUREMENT I NFORMATION

Integrated Circuit

Systems, Inc.

ICS84025

C RYSTAL -TO -LVCMOS / LVTTL

F REQUENCY S YNTHESIZER WITH F ANOUT B UFFER

A PPLICATION I NFORMATION

As in any high speed analog circuitry, the power supply pins are vulnerable to random noise. The ICS84025 provides sepa-rate power supplies to isolate any high switching noise from the outputs to the internal PLL. V DD , V DDA , and V DDO should be individually connected to the power supply plane through vias, and bypass capacitors should be used for each pin. To achieve optimum jitter performance,power supply isolation is required. Figure 2 illustrates how a 24? resistor along with a 10μF and a .01μF bypass capacitor should be connected to each V DDA pin.

IGURE OWER UPPLY ILTERING

C RYSTAL I NPUT I NTERFACE

A crystal can be characterized for either series or parallel mode operation. The ICS84025 has a built-in crystal oscillator circuit. This interface can accept either a series or parallel crystal without additional components and generate

P OWER S UPPLY F ILTERING T ECHNIQUES

frequencies with accuracy suitable for most applications.Additional accuracy can be achieved by adding two small capacitors C1 and C2 as shown in Figure 3.

Integrated Circuit

Systems, Inc.

ICS84025

C RYSTAL -TO -LVCMOS / LVTTL

F REQUENCY S YNTHESIZER WITH F ANOUT B UFFER

F IGURE 4A. ICS84025 S CHEMATIC E XAMPLE

S CHEMATIC E XAMPLE

Figure 4A shows a schematic example of using an ICS84025. In this example, the input is a 25MHz parallel resonant crystal with load capacitor CL=18pF. The frequency fine tuning capacitors C1 and C2 is 22pF and 18pF respectively. This example also shows logic control input handling. The configuration is set at F_SEL[1:0]=11 therefore the output frequency is 125MHz. It is

recommended to have one decouple capacitor per power pin.Each decoupling capacitor should be located as close as pos-sible to the power pin. The low pass filter R7, C11 and C16 for clean analog supply should also be located as close to the V DDA pin as possible.

Integrated Circuit

Systems, Inc.

ICS84025

C RYSTAL -TO -LVCMOS / LVTTL

F REQUENCY S YNTHESIZER WITH F ANOUT B UFFER

The following component footprints are used in this layout example:

All the resistors and capacitors are size 0603.

P OWER AND G ROUNDING

Place the decoupling capacitors as close as possible to the power pins. If space allows, placement of the decoupling capacitor on the component side is preferred. This can reduce unwanted in-ductance between the decoupling capacitor and the power pin caused by the via.

Maximize the power and ground pad sizes and number of vias capacitors. This can reduce the inductance between the power and ground planes and the component power and ground pins.The RC filter consisting of R7, C11, and C16 should be placed as close to the V DDA pin as possible.

C LOCK T RACES AN

D T ERMINATION

Poor signal integrity can degrade the system performance or cause system failure. In synchronous high-speed digital systems,the clock signal is less tolerant to poor signal integrity than other signals. Any ringing on the rising or falling edge or excessive ring back can cause system failure. The shape of the trace and the ?The differential 50? output traces should have the same length.

?Avoid sharp angles on the clock trace. Sharp angle turns cause the characteristic impedance to change on the transmission lines.

?Keep the clock traces on the same layer. Whenever pos-sible, avoid placing vias on the clock traces. Placement of vias on the traces can affect the trace characteristic impedance and hence degrade signal integrity.?To prevent cross talk, avoid routing other signal traces in parallel with the clock traces. If running parallel traces is unavoidable, allow a separation of at least three trace widths between the differential clock trace and the other signal trace.

?Make sure no other signal traces are routed between the clock trace pair.

?The matching termination resistors should be located as close to the receiver input pins as possible.

C RYSTAL

The crystal X1 should be located as close as possible to the pins 21 (XTAL1) and 20 (XTAL2). The trace length between the X1

Integrated Circuit

Systems, Inc.

ICS84025

C RYSTAL -TO -LVCMOS / LVTTL

F REQUENCY S YNTHESIZER WITH F ANOUT B UFFER

R ELIABILITY I NFORMATION

T RANSISTOR C OUNT

The transistor count for ICS84025 is: 2949

T ABLE 6. θJA VS . A IR F LOW T ABLE

q JA by Velocity (Linear Feet per Minute)

200

500

Single-Layer PCB, JEDEC Standard T est Boards 83.2°C/W 65.7°C/W 57.5°C/W Multi-Layer PCB, JEDEC Standard T est Boards

46.2°C/W

39.7°C/W

36.8°C/W

NOTE: Most modern PCB designs use multi-layered boards. The data in the second row pertains to most designs.

Integrated Circuit

Systems, Inc.

ICS84025

C RYSTAL -TO -LVCMOS / LVTTL

F REQUENCY S YNTHESIZER WITH F ANOUT B UFFER

P ACKAGE O UTLINE - M S UFFIX

T ABLE 7. P ACKAGE D IMENSIONS

Reference Document: JEDEC Publication 95, MS-013, MO-119

O B M Y S s

r e t e m i l l i M m

u m i n i M m

u m i x a M N 4

2A --56.21A 01.0--2A 50.255.2B 33.015.0C 81.023.0D 02.5158.51E 0

4.706.7e C

I S A B 72.1H 00.0156.01h 52.057.0L 04.072.1α

°0°

Integrated Circuit

Systems, Inc.

ICS84025

C RYSTAL -TO -LVCMOS / LVTTL

F REQUENCY S YNTHESIZER WITH F ANOUT B UFFER

T ABLE 8. O RDERING I NFORMATION

While the information presented herein has been checked for both accuracy and reliability, Integrated Circuit Systems, Incorporated (ICS) assumes no responsibility for either its use or for infringement of any patents or other rights of third parties, which would result from its use. No other circuits, patents, or licenses are implied. This product is intended for use in normal commercial applications. Any other applications such as those requiring extended temperature range, high reliability, or other extraordinary environmental requirements are not recommended without additional processing by ICS. ICS reserves the right to change any circuitry or specifications without notice. ICS does not authorize or warrant any ICS product for use in life support devices or critical medical instruments.r

e b m u N r e d r O /t r a P g n i k r a M e g a k c a P t n u o C e r u t a r e p m e T M E 52048S C I M E 52048S C I C

I O S d a e L 42e b u t r e p 03C °07o t C °0T

M E 52048S C I M

E 52048S C I l

e e R d n a e p a T n o C I O S d a e L 420

001C

°07o t C °0