TN6R04中文资料

Electrical Characteristics at Ta=25°C

Ratings

Unit Parameter Symbol Conditions

min typ max [MOSFET]

Drain-to-Source Breakdown Voltage V(BR)DSS I D=1mA, V DELAY=0650V Zero-Gate Voltage Drain Current I DSS V DS=650V, V DELAY=0 1.0mA Cutoff Voltage V GS(off)V DS=10V, I D=1mA 3.0 4.0V Static Drain-to-Source On-State Resistance R DS(on)I D=2.8A, V DELAY=15V 1.2 1.6?Input Capacitance Ciss V DS=20V, f=1MHz1450pF Output Capacitance Coss V DS=20V, f=1MHz250pF [IC]

Restriction of Drive Voltage V IN(OV)I IN=1mA, V FB=030V Detection Voltage of Feedback and

V FB V DELAY, V IN=10V, I IN=50mA 2.0V

Overload Amplifier

Recommend Operating Conditions at Ta=25°C

Parameter

Symbol Conditions

Ratings

Unit IC Input Voltage V IN ±10 to ±25V Operating Frequency

F OSC

20 to 200

kHz

Package Dimensions unit : mm 2226

Block Diagram

Pin Definitions and Functions

Pin No.Symbol Function

1FB Input for feedback voltage and current sense 2DELAY Input for timing signal 3DRAIN Power MOSFET Drain

4VIN Input for Start-up voltage and drive voltage 5

SOURCE(GND)

Power MOSFET Source (Ground)

SOURCE (GND)

DRAIN

FB VIN DELAY

Circuit Function Diagram

[Feedback control]

[Semi-regulated control]

V IN

V IN

This catalog provides information as of July, 2004. Specifications and information herein are subject to change without notice.

100

100010

1.0

IT07365

0.01

0.11.0100

0.5

1.0

1.5

2.5

2.0

0IT07366

40201001206080140160

Drain-to-Source V oltage, V DS -- V

D r a i n C u r r e n t , I D -- A

Ambient Temperature, Ta -- °C

P D -- Ta

A l l o w a b l e P o w e r D i s s i p a t i o n , P D -- W

Case Temperature, Tc -- °C

P D -- Tc

A l l o w a b l e P o w e r D i s s i p a t i o n , P D -- W

160

140120100806040200IT07367

302540

3520151050