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ISL9R8120P2;ISL9R8120S3ST;中文规格书,Datasheet资料

applications. The low I RM(REC) and short t a phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth? diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost.

Formerly developmental type TA49413.

Applications

?Switch Mode Power Supplies ?Hard Switched PFC Boost Diode ?UPS Free Wheeling Diode ?Motor Drive FWD ?SMPS FWD ?Snubber Diode

Device Maximum Ratings T C = 25°C unless otherwise noted

Symbol Parameter

Ratings Units V RRM Repetitive Peak Reverse Voltage 1200V V RWM Working Peak Reverse Voltage 1200V V R DC Blocking Voltage

1200V I F(AV)Average Rectified Forward Current (T C = 105o

C)8A I FRM Repetitive Peak Surge Current (20kHz Square Wave)16A I FSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)100A P D Power Dissipation

71W E AVL Avalanche Energy (1A, 40mH)

20mJ T J , T STG Operating and Storage Temperature Range

-55 to 150°C T L T PKG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Application Note AN-7528

300260

°C °C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

JEDEC TO-220AC

ANODE

CATHODE

CATHODE (BOTTOM SIDE

METAL)

JEDEC TO-263AB

CATHODE (FLANGE)

N / C ANODE

Package

Symbol

Dynamic Characteristics

Switching Characteristics

Thermal Characteristics

C J

Junction Capacitance

V R = 10V , I F = 0A

-30

-pF

t rr Reverse Recovery Time I F = 1A, dI F /dt = 100A/μs, V R = 30V -2532ns I F = 8A, dI F /dt = 100A/μs, V R = 30V -3544ns t rr Reverse Recovery Time

I F = 8A,

dI F /dt = 200A/μs,

V R = 780V , T C = 25°C -300-ns I RM(REC)Maximum Reverse Recovery Current - 4.3-A Q RR Reverse Recovered Charge -525-nC t rr Reverse Recovery Time I F = 8A,

dI F /dt = 200A/μs,V R = 780V ,T C = 125°C -375-ns S Softness Factor (t b /t a )

-9--I RM(REC)Maximum Reverse Recovery Current - 5.5-A Q RR Reverse Recovered Charge - 1.1-μC t rr Reverse Recovery Time I F = 8A,

dI F /dt = 1000A/μs,V R = 780V ,T C = 125°C

-200-ns S Softness Factor (t b /t a )

- 5.5--I RM(REC)Maximum Reverse Recovery Current -11-A Q RR Reverse Recovered Charge - 1.2-μC dI M /dt

Maximum di/dt during t b

-310

-A/μs

R θJC Thermal Resistance Junction to Case

TO-220, TO-263

-- 1.75°C/W R θJA

Thermal Resistance Junction to Ambient TO-220, TO-263

--62

°C/W

Figure 1.Forward Current vs Forward Voltage

Figure 2.Reverse Current vs Reverse Voltage

Figure 3.t a and t b Curves vs Forward Current

Figure 4.t a and t b Curves vs dI F /dt

Figure 5.Maximum Reverse Recovery Current vs

Forward Current

Figure 6.Maximum Reverse Recovery Current vs

dI F /dt

F R 0501001502002503000

6812

I F , FORWARD CURRENT (A)

t , R E C O V E R Y T I M E S (n s )

t b AT dI F /dt = 200A/μs, 500A/μs, 800A/μs

V R = 780V , T C = 125o C

t a AT dI F /dt = 200A/μs, 500A/μs, 800A/μs

1014350400450500050

100

150200250300350400450500200

3004005006007008009001000

dI F /dt, CURRENT RATE OF CHANGE (A/μs)

t , R E C O V E R Y T I M E S (n s )

V R = 780V, T C = 125o C

t b AT I F = 16A, 8A, 4A

t a AT I F = 16A, 8A, 4A

457911140

I F , FORWARD CURRENT (A)I R M (R E C ), M A X R E V E R S E R E C O V E R Y C U R R E N T (A )

dI F /dt = 800A/μs

dI F /dt = 600A/μs

dI F /dt = 200A/μs V R = 780V, T C = 125o C

681012134

1002003004007008009001000

dI F /dt, CURRENT RATE OF CHANGE (A/μs)

V R = 780V , T C = 125o C I F = 16A

I F = 4A

I R M (R E C ), M A X R E V E R S E R E C O V E R Y C U R R E N T (A )

I F = 8A

500600

Figure 7.Reverse Recovery Softness Factor vs

dI F /dt

Figure 8.Reverse Recovered Charge vs dI F /dt

Figure 9.Junction Capacitance vs Reverse

Voltage

Figure 10.Reverse Recovery Current and Times

vs Case Temperature

Figure 11. DC Current Derating Curve

V R , REVERSE VOLTAGE (V)

C J , J U N C T I O N C A P A C I T A N C E (p F )

0200

300

500

0.1100

0.03

1100

400

f = 1MH Z

T C , CASE TEMPERATURE (o C)

-6.0

-5.6

-5.2-4.8

-4.4

100

125

150

400

500

450

350

300t RR

t R R , R E C O V E R Y T I M E S (n s )

I R M (R E C ), M A X R E V E R S E R E C O V E R Y C U R R E N T (A )

I RM(REC)

I F = 8A, V R = 780V , dI F /dt = 200A/μs

10011013090150

1204

T C , CASE TEMPERATURE (o C)

I F (A V ), A V E R A G E F O R W A R D C U R R E N T (A )

140

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FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Formative or In Design First Production

Full Production

Not In Production

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Rev. H5

aACEx

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aaaSTAR*POWER is used under license

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ISL9R8120P2ISL9R8120S3ST