AOD403
Symbol
Typ Max 13203950R θJL 0.56 1.5Maximum Junction-to-Case
C
Steady-State
°C/W
Thermal Characteristics Parameter
Units Maximum Junction-to-Ambient A
t ≤ 10s R θJA °C/W °C/W Maximum Junction-to-Ambient
A
Steady-State AOD403
Symbol
Min Typ Max Units BV DSS -30
V
-0.01-1T J =55°C
-5I GSS ±100
nA V GS(th)-1.5-2.6-3.5V I D(ON)
-60
A
5.16T J =125°C
7.18.56.37.6
m ?g FS 44S V SD -0.72
-1V I S
-104
A C iss 4360
5300
pF C oss 1050pF C rss 762pF
R g
2.53?Q g 9
3.2
120
nC Q gs 18nC Q gd 29.2nC
t D(on)18
25ns t r 3045ns t D(off)5175ns t f 3550ns t rr 39.548ns
Q rr
30.8
37
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS V GS =0V, V DS =-15V, f=1MHz Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime V GS =-10V, V DS =-15V, R L =0.75?, R GEN =3?
Gate resistance
V GS =0V, V DS =0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS Total Gate Charge V GS =-10V, V DS =-15V, I D =-20A
Gate Source Charge m ?V GS =-10V, I D =-20A
I S =-1A,V GS =0V V DS =-5V, I D =-20A
R DS(ON)Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage I DSS μA Gate Threshold Voltage V DS =V GS I D =-250μA V DS =-24V, V GS =0V
V DS =0V, V GS =±25V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter
Conditions Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I F =-20A, dI/dt=100A/μs
Drain-Source Breakdown Voltage On state drain current
I D =-250μA, V GS =0V V GS =-10V, V DS =-5V V GS =-20V, I D =-20A
Reverse Transfer Capacitance I F =-20A, dI/dt=100A/μs
A: The value of R θJA is measured with the device mounted on 1in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°
C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability. Rev 4: Aug 2005