aod444

Symbol

Typ Max 17.4305060R θJC 47.5Maximum Junction-to-Case B

Steady-State

°C/W

Thermal Characteristics Parameter

Units Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W

Symbol

Min Typ

Max

Units BV DSS 60

V 1T J =55°C

5I GSS 100nA V GS(th)1 2.4

3

V I D(ON)

30

A 4760

T J =125°C

856785m ?g FS 14S V SD 0.74

1V I S

12

A C iss 450

540pF C oss 61pF C rss 27pF R g

1.352?Q g (10V)7.5

10nC Q g (4.5V) 3.85nC Q gs 1.2nC Q gd 1.9nC t D(on) 4.2

ns t r 3.4ns t D(off)16ns t f 2ns t rr 27.635ns Q rr

30

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage On state drain current

I D =10mA, V GS =0V V GS =10V, V DS =5V V GS =10V, I D =12A

Reverse Transfer Capacitance I F =12A, dI/dt=100A/μs

V GS =0V, V DS =30V, f=1MHz SWITCHING PARAMETERS Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter

Conditions I DSS μA Gate Threshold Voltage V DS =V GS , I D =250μA V DS =48V, V GS =0V

V DS =0V, V GS =±20V Zero Gate Voltage Drain Current Gate-Body leakage current R DS(ON)Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

m ?V GS =4.5V, I D =6A

I S =1A, V GS =0V V DS =5V, I D =12A

Gate resistance

V GS =0V, V DS =0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge V GS =10V, V DS =30V, I D =12A

Gate Source Charge Gate Drain Charge Total Gate Charge Body Diode Reverse Recovery Charge I F =12A, dI/dt=100A/μs

Maximum Body-Diode Continuous Current

Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =30V, R L =2.5?, R GEN =3?

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.

B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS