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ZXTN07045EFFTA;中文规格书,Datasheet资料

ZXTN07045EFFTA;中文规格书,Datasheet资料
ZXTN07045EFFTA;中文规格书,Datasheet资料

A Product Line of

Diodes Incorporated

45V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23F

Features and Benefits

? BV CEO > 45V

?I C = 4A Continuous Collector Current

?Low Saturation Voltage V CE(sat) < 80mV @ 1A

?R CE(sat) = 50m?

?h FE characterised up to 4A

? High

h FE min 400 @ 1A

? 1.5W

power

dissipation

?Complementary part number ZXTP07040DFF

?Totally Lead-Free & Fully RoHS compliant (Note 1) ?Halogen and Antimony Free. “Green” Device (Note 2) ?Qualified to AEC-Q101 Standards for High Reliability

Description

This low voltage NPN transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Mechanical Data

? Case:

SOT23F

?Case material: Molded Plastic. “Green” Molding Compound (Note 2) UL Flammability Classification Rating 94V-0 ?Moisture Sensitivity: Level 1 per J-STD-020 ?Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method 208

?Weight: 0.008 grams (Approximate)

Applications

? Boost

converters

?MOSFET and IGBT gate drivers

?Lamp and relay driver

? Motor

drive

? Siren

driver

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTN07045EFFTA 1D4 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

3. For packaging details, go to our website at https://www.wendangku.net/doc/c410021968.html,.

Marking Information

1D4 = Product Type Marking Code

SOT23F

Device symbol

Top View

Pin Configuration

Top View

B C

E

B

1D4

Maximum Ratings @T A = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage V CBO 45 V Collector-Emitter Voltage V CEO 45 V Emitter-Collector Voltage (Reverse Blocking) V ECO 6 V Emitter-Base Voltage V EBO 7 V Continuous Collector Current (Note 6) I C 4 A Peak Pulse Current I CM 6 A Base Current I B 1 A

Thermal Characteristics @T A = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation

Linear Derating Factor (Note 4)

P D - 0.84

6.72 W mW/°C (Note 5) 1.34

10.72 (Note 6) 1.50 12.0

(Note 7) 2.0

16.0 Thermal Resistance, Junction to Ambient (Note 4) R θJA

149 °C/W (Note 5)93

(Note 6)83 (Note 7)60

Thermal Resistance, Junction to Lead (Note 8) R θJL 43.77 °C/W Operating and Storage Temperature Range T J, T STG

-55 to +150 °C Notes:

4. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is

measured when operating in a steady-state condition. 5. For a device surface mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. For a device surface mounted on 50mm X 50mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition.

7. As note 6 above, measured at t < 5 seconds 8. Thermal resistance from junction to solder-point (at the end of the collector lead).

Typical Thermal Characteristics

Derating Curve

Temperature (°C)

Transient Thermal Impedance T h Pulse Width (s)

Pulse Power Dissipation

Pulse Width (s)

Electrical Characteristics @T A = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage BV CBO

45 160 - V I C = 100μA Collector-Emitter Breakdown Voltage (base open) (Note 9)

BV CEO 45 60 - V I C = 10mA

Emitter-Base Breakdown Voltage BV EBO

7 8.3 - V I E = 100μA Emitter-collector breakdown voltage

(reverse blocking) BV ECX

6 8.2 - V I E = 100μA; R BC < 1k ? or -0.25V < V BC < 0.25V Emitter-collector breakdown voltage

(base open)

BV ECO 6 7.2 - V I E = 100μA Collector-base Cut-off Current I CBO

- <1 - 50 20 nA

μA V CB = 35V V CB = 35V, T A = 100°C

Emitter-base Cut-off Current I EBO

- <1 50 nA V EB = 5.6V ON CHARACTERISTICS (Note 9)

Static Forward Current Transfer Ratio h FE

500

400

250 70 800 710 530 125 1500 - - - - I C = 100mA, V CE = 2V I C = 1A, V CE = 2V I C = 2A, V CE = 2V I C = 4A, V CE = 2V

Collector-Emitter Saturation Voltage V CE(sat) - 45

160

60 200 230 70 230 80 270 280 mV I C = 0.1A, I B = 0.5mA I C = 1A, I B = 5mA I C = 1A, I B = 100mA

I C = 2A, I B = 20mA I C = 4A, I B = 80mA

Base-Emitter Saturation Voltage V BE(sat)

- 1000 1100 mV I C = 4A, I B = 80mA Base-Emitter On Voltage V BE(on)

- 875 1000 mV I C = 4A, V CE = 2V SMALL SIGNAL CHARACTERISTICS (Note 9)

Transition Frequency f T

150 190 - MHz I C = 50mA, V CE = 5V,

f = 50MHz

Input Capacitance C ibo - 225 - pF V EB = 0.5V, f = 1MHz Output Capacitance C obo - 18.4 25 pF V CB = 10V, f = 1MHz Delay time t d

- 22.3 - ns V CC = 10V,

I C = 500mA,

I B1 = I B2 = 50mA

Rise time t r

- 10.6 - ns Storage time t s

- 613 - ns Fall time t f

- 146 - ns Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%

Typical Electrical Characteristics

V CE(SAT) v I C

V (V )

I C Collector Current (A)

V BE(SAT) v I C

I C Collector Current (A)

I C Collector Current (A)

V CE(SAT) v I C

V (V )

I C Collector Current (A)

V BE(ON) v I C

I C Collector Current (A)

T y p i c a l G a i n (h F E )

A Product Line of Diodes Incorporated

Package Outline Dimensions

b 3

Dim. Millimeters Inches

Dim. Millimeters

Inches

Min. Max. Min. Max.

Min. Max. Min. Max. A

-

1.12

-

0.044

e1

1.90 NOM

0.075 NOM

A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 L

0.25 0.60 0.0098 0.0236

D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 e 0.95 NOM 0.037 NOM - - - - -

Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches

Suggested Pad Layout

A Product Line of

Diodes Incorporated

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright ? 2012, Diodes Incorporated

https://www.wendangku.net/doc/c410021968.html,

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ZXTN07045EFFTA

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