1MBC05D-060中文资料
Fuji Discrete Package IGBT
n Features
? Square RBSOA
? Low Saturation Voltage
? Less Total Power Dissipation
? Minimized Internal Stray Inductance
n Applications
? High Power Switching
? A.C. Motor Controls
? D.C. Motor Controls
? Uninterruptible Power Supply
n
Outline Drawing
n Maximum Ratings and Characteristics
? Absolute Maximum Ratings ( T c=25°C)
Items Symbols Ratings Units
Collector-Emitter Voltage V CES600V
Gate -Emitter Voltage V GES± 20V
DC T c= 25°C I C 2513
Collector Current DC T c=100°C I C 1005A
1ms T c= 25°C I C PULSE52
IGBT Max. Power Dissipation P C50W
FWD Max. Power Dissipation P C25W
Operating Temperature T j+150°C
Storage Temperature T stg-40 ～ +125°C
Mounting Screw Torque40Nm
? Electrical Characteristics ( at T j=25°C )
Items Symbols Test Conditions Min.Typ.Max.Units Zero Gate Voltage Collector Current I CES V GE=0V V CE=600V 1.0mA Gate-Emitter Leackage Current I GES V CE=0V V GE=± 20V20μA Gate-Emitter Threshold Voltage V GE(th)V GE=20V I C=5mA 5.58.5
Collector-Emitter Saturation Voltage V CE(sat)V
GE
=15V I C=5A 3.0
Input capacitance C ies V GE=0V400
Output capacitance C oes V CE=10V85pF Reverse Transfer capacitance C res f=1MHz15
t ON V CC=300V 1.2
t r I C=5A0.6
t OFF V GE=±15V 1.0
Switching Time t f R G=330?0.35
t ON V CC=300V0.16
t r I C=5A0.11
t OFF V GE=+15V0.30
t f R G=33?0.35
Diode Forward On-Voltage V F I F=5A V GE=0V 3.0V Reverse Recovery Time t rr I F=5A, V GE=-10V, di/dt=100A/μs300ns
? Thermal Characteristics
Items Symbols Test Conditions Min.Typ.Max.Units
R th(j-c)IGBT 2.50
R th(j-c)Diode 5.00
n Equivalent Circuit
Turn-on Time
Turn-on Time
Turn-off Time
Turn-off Time
Thermal Resistance
V
μs
μs
°C/W
0123456
2
4
6
8
10
12
8V
10V
12V
V
GE
=20V,15V
Collector Current vs. Collector-Emitter Voltage
T
j
=25°C
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
:
I
C
[
A
]
Collector-Emitter Voltage : V
CE
[V]
0123456
2
4
6
8
10
12
8V
10V
12V
V
GE
=20V,15V
Collector Current vs. Collector-Emitter Voltage
T
j
=125°C
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
:
I
C
[
A
]
Collector-Emitter Voltage : V
CE
[V] 0510152025
2
4
6
8
10
12
I
C
=
10A
2.5A
5A
Collector-Emitter Voltage vs. Gate-Emitter Voltage
T
j
=25°C
C
o
l
l
e
c
t
o
r
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
:
V
C
E
[
V
]
Gate-Emitter Voltage : V
GE
[V]
0510152025
2
4
6
8
10
12
I
C
=
10A
2.5A
5A
Collector-Emitter Voltage vs. Gate-Emitter Voltage
T
j
=125°C
C
o
l
l
e
c
t
o
r
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
:
V
C
E
[
V
]
Gate-Emitter Voltage : V
GE
[V] 0246810
10
100
1000
t
f
t
r
t
off
t
on
Switching Time vs. Collector Current
V
CC
=300V, R
G
=33?, V
GE
=±15V, T
j
=25°C
S
w
i
t
c
h
i
n
g
T
i
m
e
:
t
o
n
,
t
r
,
t
o
f
f
,
t
f
[
n
s
e
c
]
Collector Current : I
C
[A]
0246810
10
100
1000
t
f
t
r
t
off
t
on
Switching Time vs. Collector Current
V
CC
=300V, R
G
=33?, V
GE
=±15V, T
j
=125°C
S
w
i
t
c
h
i
n
g
T
i
m
e
:
t
o
n
,
t
r
,
t
o
f
f
,
t
f
[
n
s
e
c
]
Collector Current : I
C
[A]
050100150200250300350
10
100
1000
t
f
t
r
t
off t
on
Switching Time vs. R
G
V
CC
=300V, I
C
=5A, V
GE
=±15V, T
j
=25°C
S
w
i
t
c
h
i
n
g
T
i
m
e
:
t
o
n
,
t
r
,
t
o
f
f
,
t
f
[
n
s
e
c
]
Gate Resistance : R
G
[?]
050100150200250300350
10
100
1000
t
f
t
r
t
off
t
on
Switching Time vs. R
G
V
CC
=300V, I
C
=5A, V
GE
=±15V, T
j
=125°C
S
w
i
t
c
h
i
n
g
T
i
m
e
:
t
o
n
,
t
r
,
t
o
f
f
,
t
f
[
n
s
e
c
]
Gate Resistance : R
G
[?] 05101520253035
1
10
100
1000
C
res
C
oes
C
ies
Capacitance vs. Collector-Emitter Voltage
T
j
=25°C
C
a
p
a
c
i
t
a
n
c
e
:
C
o
e
s
,
C r
e
s
,
C i
e
s
[
p
F
]
0510********
100
200
300
400
500
C
o
l
l
e
c
t
o
r
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
:
V
C
E
[
V
]
Gate Charge : Q
G
[nQ]
5
10
15
20
25
V
C C
=200V, 300V, 400V
G
a
t
e
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
:
V
G
E
[
V
]
Dynamic Input Characteristics
T
j
=25°C
0246810
50
100
150
25°C
125°C
Reverse Recovery Time vs. Forward Current
V
R
=200V, -di/
dt
=100A/μsec
R
e
v
e
r
s
e
R
e
c
o
v
e
r
y
T
i
m
e
:
t
r
r
[
n
s
e
c
]
Forward Current : I
F
[A]
0246810
1
2
3
4
5
25°C
125°C
Reverse Recovery Current vs. Forward Current
V
R
=200V, -di/
dt
=100A/μsec
R
e
v
e
r
s
e
R
e
c
o
v
e
r
y
C
u
r
r
e
n
t
:
I
r
r
[
A
]
Forward Current : I
F
[A]
0100200300400500600700
2
4
6
8
10
1
2
Reverse Biased Safe Operating Area
+V
GE
=15V, -V
GE
<15V, T
j
<125°C, R
G
>33?
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
:
I
C
[
A
]
Collector-Emitter Voltage : V
CE
[V]
510152025
20
40
60
80
S
h
o
r
t
C
i
r
c
u
i
t
C
u
r
r
e
n
t
:
I
S
C
[
A
]
t
SC
Gate Voltage : V
GE
[V]
20
40
60
80
S
h
o
r
t
C
i
r
c
u
i
t
T
i
m
e
:
t
S
C
[
μ
s
]
Typical Short Circuit Capability
V
CC
=400V, R
G
=33?, T
j
=125°C
I
SC 0,00,51,01,52,02,53,03,54,0
2
4
6
8
10
12
25°C
T
j
=125°C
Forward Voltage vs. Forward Current
F
o
r
w
a
r
d
C
u
r
r
e
n
t
:
I
F
[
A
]
Forward Voltage : V
F
[V]
50
100
150
200
t
rr
R
e
v
e
r
s
e
R
e
c
o
v
e
r
y
T
i
m
e
:
t
r
r
[
n
s
e
c
]
-di/
dt
[A/μsec]
0100200300400500
2
4
6
8
R
e
v
e
r
s
e
R
e
c
o
v
e
r
y
C
u
r
r
e
n
t
:
I
r
r
[
A
]
I
rr
Reverse Recovery Characteristics vs. -di/
dt
I
F
=5A, T
j
=125°C
10-410-310-210-1100
10-2
10-1
100
101
IGBT
F W D
Transient Thermal Resistance
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
:
R
t
h
(
j
-
c
)
[
°
C
/
W
]
Pulse Width : P
W
[sec]
Switching losses
(E on, E off vs. I C)
Switching waveforms
P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 https://www.wendangku.net/doc/c410970070.html,
I C [A]