SI4914DY-T1-E3;中文规格书,Datasheet资料

Vishay Siliconix

Si4914DY

New Product

Document Number: https://www.wendangku.net/doc/c611688016.html,

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

?LITTLE FOOT ? Plus Integrated Schottky ?100 % R g Tested

APPLICATIONS

?Logic DC/DC

- Notebook PC

PRODUCT SUMMARY

V DS (V)

r DS(on) (Ω)I D (A)Channel-1

30

0.023 at V GS = 10 V 7.00.032 at V GS = 4.5 V 5.6Channel-2

0.020 at V GS = 10 V 7.40.027 at V GS = 4.5 V

6.4

SCHOTTKY PRODUCT SUMMARY

V DS

(V)V SD (V)

Diode Forward Voltage

I F (A)30

0.40 V at 1.0 A

2.0

Notes:

a. Surface Mounted on 1" x 1" FR4 Board. ABSOLUTE MAXIMUM RATINGS T A = 25°C, unless otherwise noted

Parameter Symbol

Channel-1Channel-2

Unit 10 sec

Steady State 10 sec Steady State

Drain-Source Voltage V DS 30V

Gate-Source Voltage

V GS 20

Continuous Drain Current (T J = 150 °C)a T A = 25 °C I D 7.0 5.57.4 5.7A T A = 70 °C

5.6

4.3

6

4.5

Pulsed Drain Current

I DM 40

40

Continuous Source Current (Diode Conduction)a

I S 1.7

1.0

1.8

0.95Single Pulse Avalanche Current

L = 0.1 mH

I AS 1315Avalanche Energy

E AS 8.45

11

mJ Maximum Power Dissipation a

T A = 25 °C P D 1.9 1.1 2.0 1.16W T A = 70 °C 1.20.71

1.3

0.74

Operating Junction and Storage T emperature Range

T J , T stg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol

Channel-1Channel-2

Unit

Typ Max Typ Max Maximum Junction-to-Ambient a t ≤ 10 sec R thJA 52654760°C/W Steady State 9011285107Maximum Junction-to-Foot (Drain)Steady State

R thJF

30

38

28

35

https://www.wendangku.net/doc/c611688016.html, Document Number: 72938

Vishay Siliconix

Si4914DY

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

MOSFET SPECIFICATIONS T J = 25°C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ a Max Unit Static

Gate Threshold Voltage V GS(th) V DS = V GS , I D = 250 μA Ch-1 1.0 2.5V Ch-2 1.0

2.5Gate-Body Leakage

I GSS

V DS = 0 V , V GS = 20 V Ch-1100nA Ch-2100Zero Gate Voltage Drain Current

I DSS

V DS = 30 V, V GS = 0 V

Ch-11μA Ch-2500V DS = 30 V , V GS = 0 V, T J = 85 °C

Ch-10.015mA Ch-220

On-State Drain Current b

I D(on)

V DS = 5 V , V GS = 10 V Ch-120A

Ch-220

Drain-Source On-State Resistance b r DS(on) V GS = 10 V , I D = 7.0 A

Ch-10.0190.023Ω

V GS = 10 V , I D = 7.4 A Ch-20.0160.020V GS = 4.5 V , I D = 5.6 A Ch-10.0260.032V GS = 4.5 V , I D = 6.4 A Ch-20.0220.027

Forward T ransconductance b g fs V DS = 15 V , I D = 7.0 A Ch-119S

V DS = 15 V , I D = 7.4 A Ch-222Diode Forward Voltage b V SD

I S = 1.7 A, V GS = 0 V Ch-10.75 1.1V

I S = 1 A, V GS = 0 V

Ch-20.360.40Dynamic a

Total Gate Charge Q g Channel-1

V DS = 15 V , V GS = 4.5 V , I D = 7.0 A Channel-2

V DS = 15 V , V GS = 4.5 V , I D = 7.4 A

Ch-1 5.68.5nC Ch-27.311

Gate-Source Charge Q gs Ch-1 2.3Ch-2 2.8Gate-Drain Charge Q gd Ch-1 1.7Ch-2 2.2Gate Resistance R g Ch-10.5 2.3 3.6Ω

Ch-20.5

1.6

2.5Turn-On Delay Time t d(on) Channel-1

V DD = 15 V , R L = 15 Ω I D ? 1 A, V GEN = 10 V, R g = 6 ΩChannel-2

V DD = 15 V , R L = 15 Ω I D ? 1 A, V GEN = 10 V, R g = 6 ΩCh-1610ns

Ch-2711Rise Time

t r Ch-11320Ch-21320Turn-Off Delay Time t d(off) Ch-12740Ch-23553Fall Time

t f Ch-1915Ch-21015Source-Drain Reverse Recovery Time

t rr

I F = 1.3 A, di/dt = 100 A/μs Ch-13050I F = 2.2 A, di/dt = 100 μA/μs

Ch-2

30

50

SCHOTTKY SPECIFICATIONS T J = 25°C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Forward Voltage Drop

V F I F = 1.0 A 0.360.40

V I F = 1.0 A, T J = 150 °C 0.270.31

Maximum Reverse Leakage Current

I rm V r = 30 V 0.0080.50

mA V r = 30 V , T J = 100 °C 3.510V r = - 30 V , T J = 125 °C 10100

Junction Capacitance C T V r = 10 V 58pF

Document Number: https://www.wendangku.net/doc/c611688016.html,

Vishay Siliconix

Si4914DY

CHANNEL-1 TYPICAL CHARACTERISTICS 25°C, unless noted

Output Characteristics

Gate Charge

Capacitance

Vishay Siliconix

Si4914DY

CHANNEL-1 TYPICAL CHARACTERISTICS 25°C, unless noted

https://www.wendangku.net/doc/c611688016.html, Document Number: 72938

Document Number: https://www.wendangku.net/doc/c611688016.html,

Vishay Siliconix

Si4914DY

CHANNEL-1 TYPICAL CHARACTERISTICS 25°C, unless noted

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Thermal Transient Impedance, Junction-to-Foot

https://www.wendangku.net/doc/c611688016.html, Document Number: 72938

Vishay Siliconix

Si4914DY

CHANNEL-2 TYPICAL CHARACTERISTICS 25°C, unless noted

Gate Charge

On-Resistance vs. Junction Temperature

Document Number: https://www.wendangku.net/doc/c611688016.html,

Vishay Siliconix

Si4914DY

CHANNEL-2 TYPICAL CHARACTERISTICS 25°C, unless noted

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

https://www.wendangku.net/doc/c611688016.html, Document Number: 72938

Vishay Siliconix

Si4914DY

CHANNEL-2 TYPICAL CHARACTERISTICS 25°C, unless noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see https://www.wendangku.net/doc/c611688016.html,/ppg?72938.

Normalized Thermal Transient Impedance, Junction-to-Ambient

Disclaimer Legal Disclaimer Notice

Vishay

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: https://www.wendangku.net/doc/c611688016.html,

分销商库存信息: VISHAY

SI4914DY-T1-E3