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IRGS4B60KD1中文资料

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

05/28/03

IRGB4B60KD1IRGS4B60KD1IRGSL4B60KD1

V CES = 600V I C = 7.6A, T C =100°C t sc > 10μs, T J =150°C

V CE(on) typ. = 2.1V

Features

? Low VCE (on) Non Punch Through IGBT Technology.? 10μs Short Circuit Capability.? Square RBSOA.

? Positive VCE (on) Temperature Coefficient.

? Maximum Junction Temperature rated at 175°C.

Benefits

? Benchmark Efficiency for Motor Control.? Rugged Transient Performance.? Low EMI.

? Excellent Current Sharing in Parallel Operation.

D 2Pak IRGS4B60KD1

TO-262IRGSL4B60KD1

TO-220

IRGB4B60KD1PD - 94607A

IRGB/S/SL4B60KD1

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Note to are on page 16

IRGB/S/SL4B60KD1

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Fig. 1 - Maximum DC Collector Current vs.

Case Temperature Fig. 2 - Power Dissipation vs. Case

Temperature

Fig. 3 - Forward SOA T C = 25°C; T J ≤ 150°C Fig. 4 - Reverse Bias SOA T J = 150°C; V GE =15V

80100120140160180 T C (°C)

010203040506070P t o t (W

)

100

1000

10000

V CE (V)

0.01

0.1

100I C (A )

1001000

V CE (V)

10100

C A )

80100120140160180 T C (°C)

024681012I C (A

)

IRGB/S/SL4B60KD1

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Fig. 8 - Typ. Diode Forward Characteristics

tp = 80μs

Fig. 7 - Typ. IGBT Output Characteristics

T J = 150°C; tp = 80μs

Fig. 6 - Typ. IGBT Output Characteristics

T J = 25°C; tp = 80μs

Fig. 5 - Typ. IGBT Output Characteristics

T J = -40°C; tp = 80μs 0

V CE (V)

0510********I C E (A )

024681012

V CE (V)

51015202530I C E (A )

V CE (V)

I C E (A )

0.0

0.5

1.0

1.5

2.0

2.5

3.0

V F (V)

1520253035I

F (A )

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Fig. 10 - Typical V CE vs. V GE

T J = 25°C

Fig. 12 - Typ. Transfer Characteristics

V CE = 360V; tp = 10μs

Fig. 11 - Typical V CE vs. V GE

T J = 150°C 0

2468101214161820V C E (V )

V GE (V)

2468101214

161820V C E (V )

1520 V GE (V)

024681012141618

20V C E (V )

V GS , Gate-to-Source Voltage (V)

I D , D r a i n -t o -S o u r c e C u r r e n t (Α)

IRGB/S/SL4B60KD1

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Fig. 14 - Typ. Switching Time vs. I C T J = 150°C; L=2.5mH; V CE = 400V

R G = 100?; V GE = 15V

Fig. 13 - Typ. Energy Loss vs. I C T J = 150°C; L=2.5mH; V CE = 400V,

R G = 100?; V GE = 15V Fig. 16 - Typ. Switching Time vs. R G T J = 150°C; L=2.5mH; V CE = 400V

I CE = 4.0A; V GE = 15V

Fig. 15 - Typ. Energy Loss vs. R G T J = 150°C; L=2.5mH; V CE = 400V

I CE = 4.0A; V GE = 15V 1

I C (A)

050100150200250300

350E n e r g y (μJ )

100

200

300

400

500

R G (?)050100150200250

300350E n e r g y (μJ )

I C (A)

110

100

1000

S w i c h i n g T i m e (n s )

100

200

300

400

500

R G (?)

100

1000

S w i c h i n g T i m e (n s )

IRGB/S/SL4B60KD1

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Fig. 17 - Typical Diode I RR vs. I F

T J = 150°C Fig. 18 - Typical Diode I RR vs. R G

T J = 150°C; I F = 4.0A

Fig. 20 - Typical Diode Q RR V CC = 400V; V GE = 15V;T J = 150°C

Fig. 19- Typical Diode I RR vs. di F /dt

V CC = 400V; V GE = 15V;I F = 4.0A; T J = 150°C

I F (A)1234567

8910I R R (A )

100

200

300

400

500

R G (

I R R (A )

di F /dt (A/μs)

I R R (A )

050100150200250300350400

di F

/dt (A/μs)

100

200300

400500600

700Q R R (μC )

IRGB/S/SL4B60KD1

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Fig. 21 - Typical Diode E RR vs. I F

T J = 150°C

Fig. 22- Typ. Capacitance vs. V CE

V GE = 0V; f = 1MHz Fig. 23 - Typical Gate Charge vs. V GE

I CE = 4.0A; L = 3150μH

I F (A)

025

100

125

150

E n e r g y (μJ )

Q G , Total Gate Charge (nC)

100

V CE (V)

110

100

1000C a p a c i t a n c e (p F )

IRGB/S/SL4B60KD1

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Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

t 1 , Rectangular Pulse Duration (sec)

T h e r m a l R e s p o n s e ( Z

)

t 1 , Rectangular Pulse Duration (sec)

T h e r m a l R e s p o n s e ( Z t h J C )

IRGB/S/SL4B60KD1

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Fig.C.T.1 - Gate Charge Circuit (turn-off)Fig.C.T.2 - RBSOA Circuit

Fig.C.T.3 - S.C.SOA Circuit

Fig.C.T.4 - Switching Loss Circuit

Fig.C.T.5

- Resistive Load Circuit

R =

V CC

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Fig. WF3- Typ. Diode Recovery Waveform

@ T J = 150°C using Fig. CT.4Fig. WF4- Typ. S.C Waveform @ T C = 150°C using Fig. CT.3

Fig. WF1- Typ. Turn-off Loss Waveform

@ T J = 150°C using Fig. CT.4

Fig. WF2- Typ. Turn-on Loss Waveform

@ T J = 150°C using Fig. CT.4

I (I C E V C E (V )

IRGB/S/SL4B60KD1

TO-220AB Package Outline Dimensions are shown in millimeters (inches)

D2Pak Package Outline

IRGB/S/SL4B60KD1

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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at https://www.wendangku.net/doc/c312793049.html, for sales contact information . 05/03

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.

Qualification Standards can be found on IR’s Web site.

TO-220AB package is not recommended for Surface Mount Application.

Notes:

V CC = 80% (V CES ), V GE = 15V, L = 100μH, R G = 100?.

When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer

to application note #AN-994.

Energy losses include "tail" and diode reverse recovery, using Diode FD059H06A5.

D 2Pak T ape & Reel Information

TRR

FEED DIRECTION

1.85 (.073)

1.65 (.065)

1.60 (.063)1.50 (.059)

4.10 (.161)3.90 (.153)

TRL

FEED DIRECTION 10.90 (.429)10.70 (.421)

16.10 (.634)15.90 (.626)

1.75 (.069)1.25 (.049)

11.60 (.457)11.40 (.449)

15.42 (.609)15.22 (.601)

4.72 (.136)4.52 (.178)

24.30 (.957)23.90 (.941)

0.368 (.0145)0.342 (.0135)

1.60 (.063)1.50 (.059)

13.50 (.532)12.80 (.504)330.00(14.173) MAX.

27.40 (1.079)23.90 (.941)

60.00 (2.362) MIN.

30.40 (1.197) MAX.

26.40 (1.039)24.40 (.961)

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.