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AP2122AK-3.3TRE1中文资料

Sep. 2006 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122General Description

The AP2122 series are positive voltage regulator ICs fabricated by CMOS process. Each of these ICs con-sists of a voltage reference, an error amplifier, a resis-tor network for setting output voltage, a current limit circuit for current protection and a chip enable circuit .The AP2122 series feature high ripple rejection, low dropout voltage, low noise, high output voltage accu-racy, and low current consumption which make them ideal for use in various battery-powered devices. The AP2122 series have 1.5V , 1.8V , 2.5V , 2.8V , 3.0V ,3.2V and 3.3V versions.

The AP2122 are available in standard SOT-23-5 pack-age.

Features

·Low Dropout V oltage at I OUT =100mA: 150mV Typical (Except 1.5V Version)

·Low Standby Current: 0.1μA Typical ·Low Quiescent Current: 25μA Typical

·High Ripple Rejection: 70dB Typical （f=10kHz ）·Maximum Output Current: More Than 150mA (300mA Limit)

·Extremely Low Noise: 30μVrms (10Hz to 100kHz)

·Excellent Line Regulation: 4mV Typical ·Excellent Load Regulation: 12mV Typical ·High Output V oltage Accuracy: ±2%

·Excellent Line and Load Transient Response

Compatible with Low ESR Ceramic Capacitor (as Low as 1μF)

Applications

·Mobile Phones, Cordless Phones ·MP3/4

·Portable Electronic Devices ·Cameras, Video Recorders

·Sub-board Power Supplies for Telecom Equip-ment

Battery Powered Equipment

Figure 1. Package Type of AP2122

SOT-23-5

Sep. 2006 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122Pin Configuration

Figure 2. Pin Configuration of AP2122 (Top View)

K Package (SOT-23-5)

V OUT

GND

Pin Description

Pin Number

Pin Name Function

1V OUT Regulated output voltage 2GND Ground 3V IN Input voltage

4CE Active high enable input pin. Logic high=enable, logic low=shutdown 5

No connection

V IN

Sep. 2006 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122Functional Block Diagram

Figure 3. Functional Block Diagram of AP2122

V IN

OUT

Sep. 2006 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122Package Temperature Range Condition Part Number Marking ID Packing Type SOT-23-5

-40 to 85o C

Active High (Pull-down resistor built-in)AP2122AK-1.5TRE1E2Z Tape & Reel Active High (Pull-down resistor built-in)AP2122AK-1.8TRE1E2U Tape & Reel Active High (Pull-down resistor built-in)AP2122AK-2.5TRE1

E2V Tape & Reel Active High (Pull-down resistor built-in)AP2122AK-2.8TRE1E2W Tape & Reel Active High (Pull-down resistor built-in)AP2122AK-3.0TRE1E2X Tape & Reel Active High (Pull-down resistor built-in)AP2122AK-3.2TRE1E3Y Tape & Reel Active High (Pull-down resistor built-in)AP2122AK-3.3TRE1

E2Y

Tape & Reel

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.

Circuit Type

Package E1: Lead Free

AP2122 -

TR: Tape and Reel

Ordering Information

1.5: Fixed Output 1.5V

2.5: Fixed Output 2.5V

3.0: Fixed Output 3.0V K: SOT-23-5

A: Active High

(Pull-down resistor built-in) 1.8: Fixed Output 1.8V 2.8: Fixed Output 2.8V 3.2: Fixed Output 3.2V 3.3: Fixed Output 3.3V

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122

These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.

Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifica-tions do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a function of the maximum junction temperature, T J(max), the junction-to-ambient thermal resistance, θJA, and the ambient tem-perature, T A. The maximum allowable power dissipation at any ambient temperature is calculated using: P D(max)=(T J(max) -T A)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature. Recommended Operating Conditions

Parameter Symbol Min Max Unit Input V oltage V IN26V Operating Junction Temperature Range T J -4085 o C

Sep. 2006 Rev. 1. 1BCD Semiconductor Manufacturing Limited

Sep. 2006 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122Electrical Characteristics

Parameter Symbol Conditions

Min Typ Max Unit Output V oltage V OUT V IN =2.5V

1mA ≤I OUT ≤30mA

1.47

1.5

1.53 V Input V oltage V IN 6

V Output Current I OUT

V IN -V OUT =1V 150

mA Load Regulation V RLOAD V IN =2.5V

1mA ≤I OUT ≤80mA 1240mV Line Regulation

V RLINE

2.3V ≤V IN ≤6V I OUT =30mA 416mV

Dropout V oltage

V DROP

I OUT =10mA

400 600mV

I OUT =100mA 400 600I OUT =150mA

400 600Quiescent Current I Q V IN =2.5V , I OUT =0mA 2550μA Standby Current I STD V IN =2.5V

V CE in OFF mode 0.11

μA

Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p, f=10kHz V IN =2.5V 70dB Output V oltage

Temperature Coefficient ?V OUT /?T I OUT =30mA ±150 μV/o C (?V OUT /V OUT )/?T

±100ppm/o C Short Current Limit I LIMIT V OUT =0V 50mA

RMS Output Noise V NOISE

T A =25o C

10Hz ≤f ≤100kHz 30

μVrms

CE "High" V oltage CE input voltage "High" 1.5

V CE "Low" V oltage CE input voltage "Low"

0.25V CE Pull-down Internal Resistance

R PD 2.5

M ?

(V IN =2.5V , T J =25o C, C IN =1μF, C OUT =1μF, Bold typeface applies over -40o C ≤T J ≤85o C, unless otherwise specified.)AP2122-1.5 Electrical Characteristics

Sep. 2006 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122Parameter Symbol Conditions

Min Typ Max Unit Output V oltage V OUT V IN =2.8V

1mA ≤I OUT ≤30mA

1.764

1.8

1.836V Input V oltage V IN 6

V Output Current I OUT

V IN -V OUT =1V 150

mA Load Regulation V RLOAD V IN =2.8V

1mA ≤I OUT ≤80mA 1240mV Line Regulation

V RLINE

2.3V ≤V IN ≤6V I OUT =30mA 416mV

Dropout V oltage

V DROP

I OUT =10mA

2040mV

I OUT =100mA 150300I OUT =150mA

200400Quiescent Current I Q V IN =2.8V , I OUT =0mA 2550μA Standby Current I STD V IN =2.8V

V CE in OFF mode 0.11

μA

Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p, f=10kHz V IN =2.8V 70dB Output V oltage

Temperature Coefficient ?V OUT /?T I OUT =30mA ±180 μV/o C (?V OUT /V OUT )/?T

±100ppm/o C Short Current Limit I LIMIT V OUT =0V 50mA

RMS Output Noise V NOISE

T A =25o C

10Hz ≤f ≤100kHz 30

μVrms

CE "High" V oltage CE input voltage "High" 1.5

V CE "Low" V oltage CE input voltage "Low"

0.25V CE Pull-down Internal Resistance

R PD 2.5

M ?

(V IN =2.8V , T J =25o C, C IN =1μF, C OUT =1μF, Bold typeface applies over -40o C ≤T J ≤85o C, unless otherwise specified.)Electrical Characteristics (Continued)AP2122-1.8 Electrical Characteristics

Sep. 2006 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122Electrical Characteristics (Continued)Parameter Symbol Conditions

Min Typ Max Unit Output V oltage V OUT V IN =3.5V

1mA ≤I OUT ≤30mA

2.45

2.5

2.55V Input V oltage V IN 6

V Output Current I OUT

V IN -V OUT =1V 150

mA Load Regulation V RLOAD V IN =3.5V

1mA ≤I OUT ≤80mA 1240mV Line Regulation

V RLINE

3V ≤V IN ≤6V I OUT =30mA 416mV

Dropout V oltage

V DROP

I OUT =10mA

2040mV

I OUT =100mA 150300I OUT =150mA

200400Quiescent Current I Q V IN =3.5V , I OUT =0mA 2550μA Standby Current I STD V IN =3.5V

V CE in OFF mode 0.11

μA

Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p, f=10kHz V IN =3.5V 70dB Output V oltage

Temperature Coefficient ?V OUT /?T I OUT =30mA ±250 μV/o C (?V OUT /V OUT )/?T

±100ppm/o C Short Current Limit I LIMIT V OUT =0V 50mA

RMS Output Noise V NOISE

T A =25o C

10Hz ≤f ≤100kHz 30

μVrms

CE "High" V oltage CE input voltage "High" 1.5

V CE "Low" V oltage CE input voltage "Low"

0.25V CE Pull-down Internal Resistance

R PD 2.5

M ?

(V IN =3.5V , T J =25o C, C IN =1μF, C OUT =1μF, Bold typeface applies over -40o C ≤T J ≤85o C, unless otherwise specified.)AP2122-2.5 Electrical Characteristics

Sep. 2006 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122Parameter Symbol Conditions

Min Typ Max Unit Output V oltage V OUT V IN =3.8V

1mA ≤I OUT ≤30mA

2.744

2.8

2.856V Input V oltage V IN 6

V Output Current I OUT

V IN -V OUT =1V 150

mA Load Regulation V RLOAD V IN =3.8V

1mA ≤I OUT ≤80mA 1240mV Line Regulation

V RLINE

3.3V ≤V IN ≤6V I OUT =30mA 416mV

Dropout V oltage

V DROP

I OUT =10mA

2040mV

I OUT =100mA 150300I OUT =150mA

200400Quiescent Current I Q V IN =3.8V , I OUT =0mA 2550μA Standby Current I STD V IN =3.8V

V CE in OFF mode 0.11

μA

Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p, f=10kHz V IN =3.8V 70dB Output V oltage

Temperature Coefficient ?V OUT /?T I OUT =30mA ±280 μV/o C (?V OUT /V OUT )/?T

±100ppm/o C Short Current Limit I LIMIT V OUT =0V 50mA

RMS Output Noise V NOISE

T A =25o C

10Hz ≤f ≤100kHz 30

μVrms

CE "High" V oltage CE input voltage "High" 1.5

V CE "Low" V oltage CE input voltage "Low"

0.25V CE Pull-down Internal Resistance

R PD 2.5

M ?

(V IN =3.8V , T J =25o C, C IN =1μF, C OUT =1μF, Bold typeface applies over -40o C ≤T J ≤85o C, unless otherwise specified.)Electrical Characteristics (Continued)AP2122-2.8 Electrical Characteristics

Sep. 2006 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122Parameter Symbol Conditions

Min Typ Max Unit Output V oltage V OUT V IN =4V

1mA ≤I OUT ≤30mA

2.94

3.0

3.06V Input V oltage V IN 6

V Output Current I OUT

V IN -V OUT =1V 150

mA Load Regulation V RLOAD V IN =4V

1mA ≤I OUT ≤80mA 1240mV Line Regulation

V RLINE

3.5V ≤V IN ≤6V I OUT =30mA 416mV

Dropout V oltage

V DROP

I OUT =10mA

2040mV

I OUT =100mA 150300I OUT =150mA

200400Quiescent Current I Q V IN =4V , I OUT =0mA 2550μA Standby Current I STD V IN =4V

V CE in OFF mode 0.11

μA

Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p, f=10kHz V IN =4V 70dB Output V oltage

Temperature Coefficient ?V OUT /?T I OUT =30mA ±300 μV/o C (?V OUT /V OUT )/?T

±100ppm/o C Short Current Limit I LIMIT V OUT =0V 50mA

RMS Output Noise V NOISE

T A =25o C

10Hz ≤f ≤100kHz 30

μVrms

CE "High" V oltage CE input voltage "High" 1.5

V CE "Low" V oltage CE input voltage "Low"

0.25V CE Pull-down Internal Resistance

R PD 2.5

M ?

(V IN =4V , T J =25o C, C IN =1μF, C OUT =1μF, Bold typeface applies over -40o C ≤T J ≤85o C, unless otherwise specified.)Electrical Characteristics (Continued)AP2122-3.0 Electrical Characteristics

Sep. 2006 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122Electrical Characteristics (Continued)Parameter Symbol Conditions

Min Typ Max Unit Output V oltage V OUT V IN =4.2V

1mA ≤I OUT ≤30mA

3.136

3.2

3.264V Input V oltage V IN 6

V Output Current I OUT

V IN -V OUT =1V 150

mA Load Regulation V RLOAD V IN =4.2V

1mA ≤ I OUT ≤ 80mA 1240mV Line Regulation

V RLINE

3.7V ≤V IN ≤6V I OUT =30mA 416mV

Dropout V oltage

V DROP

I OUT =10mA

2040mV

I OUT =100mA 150300I OUT =150mA

200400Quiescent Current I Q V IN =4.2V , I OUT =0mA 2550μA Standby Current I STD V IN =4.2V

V CE in OFF mode 0.11

μA

Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p, f=10kHz V IN =4.2V 70dB Output V oltage

Temperature Coefficient ?V OUT /?T I OUT =30mA ±320 μV/o C (?V OUT /V OUT )/?T

±100ppm/o C Short Current Limit I LIMIT V OUT =0V 50mA

RMS Output Noise V NOISE

T A =25o C

10Hz ≤f ≤100kHz 30

μVrms

CE "High" V oltage CE input voltage "High" 1.5

V CE "Low" V oltage CE input voltage "Low"

0.25V CE Pull-down Internal Resistance

R PD 2.5

M ?

(V IN =4.2V , T J =25o C, C IN =1μF, C OUT =1μF, Bold typeface applies over -40o C ≤T J ≤85o C, unless otherwise specified.)AP2122-3.2 Electrical Characteristics

Sep. 2006 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122Parameter Symbol Conditions

Min Typ Max Unit Output V oltage V OUT V IN =4.3V

1mA ≤I OUT ≤30mA

3.234

3.3

3.366V Input V oltage V IN 6

V Output Current I OUT

V IN -V OUT =1V 150

mA Load Regulation V RLOAD V IN =4.3V

1mA ≤ I OUT ≤ 80mA 1240mV Line Regulation

V RLINE

3.8V ≤V IN ≤6V I OUT =30mA 416mV

Dropout V oltage

V DROP

I OUT =10mA

2040mV

I OUT =100mA 150300I OUT =150mA

200400Quiescent Current I Q V IN =4.3V , I OUT =0mA 2550μA Standby Current I STD V IN =4.3V

V CE in OFF mode 0.11

μA

Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p, f=10kHz V IN =4.3V 70dB Output V oltage

Temperature Coefficient ?V OUT /?T I OUT =30mA ±330 μV/o C (?V OUT /V OUT )/?T

±100ppm/o C Short Current Limit I LIMIT V OUT =0V 50mA

RMS Output Noise V NOISE

T A =25o C

10Hz ≤f ≤100kHz 30

μVrms

CE "High" V oltage CE input voltage "High" 1.5

V CE "Low" V oltage CE input voltage "Low"

0.25V CE Pull-down Internal Resistance

R PD 2.5

M ?

(V IN =4.3V , T J =25o C, C IN =1μF, C OUT =1μF, Bold typeface applies over -40o C ≤T J ≤85o C, unless otherwise specified.)AP2122-3.3 Electrical Characteristics

Electrical Characteristics (Continued)

Sep. 2006 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122Typical Performance Characteristics

Figure 4. Output Voltage vs. Output Current Figure 6. Output Voltage vs. Input Voltage

Figure 5. Output Voltage vs. Output Current

Figure 7. Output Voltage vs. Input Voltage

Sep. 2006 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122Typical Performance Characteristics (Continued)

Figure 8. Dropout Voltage vs. Output Current

Figure 10. Output Voltage vs. Junction Temperature Figure 9. Dropout Voltage vs. Output Current

Figure 11. Output Voltage vs. Junction Temperature

Sep. 2006 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122Typical Performance Characteristics (Continued)

Figure 12. Supply Current vs. Input Voltage

Figure 14. Supply Current vs. Junction Temperature

Figure 13. Supply Current vs. Input Voltage

Figure 15. Supply Current vs. Junction Temperature

Sep. 2006 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122Typical Performance Characteristics (Continued)

?V O U T (0.05V /D i v )

V I N (1V /D i v )

Figure 16. Line Transient

(Conditions: I OUT =30mA, C IN =1μF, C OUT =1μF)

Time (40μs/Div)

AP2122-1.5

02.5

3.50.05 Figure 18. Load Transient

(Conditions: V IN =2.5V, C IN =1μF, C OUT =1μF)V O U T (0.1V /D i v )

I O U T (50m A /D i v ) Time (200μs/Div)

AP2122-1.5

01001.51.4

AP2122-3.0

Figure 17. Line Transient

(Conditions: I OUT =30mA, C IN =1μF, C OUT =1μF)

AP2122-3.0

Time (200μs/Div)

Figure 19. Load Transient

(Conditions: V IN =4V, C IN =1μF, C OUT =1μF)

Time (20μs/Div)

-0.054.5?V O U T (0.05V /D i v )

V I N (1V /D i v )

50.05-0.0561.650I O U T (100m A /D i v )

02003.02.9

3.1100V O U T (0.1V /D i v )

5.5

-0.1

71.7-50

3.2-100

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Typical Performance Characteristics (Continued)

Figure 20. PSRR vs. Frequency Figure 21. PSRR vs. Frequency

Sep. 2006 Rev. 1. 1BCD Semiconductor Manufacturing Limited

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Typical Application

Note: Filter capacitors are required at the AP2122's input and output. 1μF capacitor is required at the input. The minimum output capacitance required for stability should be more than 1μF with ESR from 0.01? to 100?. Ceramic capacitors are recommended.

Figure 22. Typical Application of AP2122

Sep. 2006 Rev. 1. 1BCD Semiconductor Manufacturing Limited

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Mechanical Dimensions

SOT-23-5Unit: mm(inch)

Sep. 2006 Rev. 1. 1BCD Semiconductor Manufacturing Limited

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others.

- Wafer Fab

Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008

BCD Semiconductor Manufacturing Limited

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