IRF840
FEATURES
SYMBOL
QUICK REFERENCE DATA
? Repetitive Avalanche Rated ? Fast switching
? High thermal cycling performance ? Low thermal resistance
GENERAL DESCRIPTION
PINNING
SOT78 (TO220AB)
N-channel,enhancement mode PIN DESCRIPTION
field-effect power transistor,intended for use in off-line switched 1gate mode power supplies,T.V.and computer monitor power supplies,2drain d.c.to d.c.converters,motor control circuits and general purpose 3source switching applications.
tab
drain
The IRF840is supplied in the SOT78(TO220AB)conventional leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER CONDITIONS
MIN.MAX.UNIT V DSS Drain-source voltage T j = 25 ?C to 150?C
-500V V DGR Drain-gate voltage T j = 25 ?C to 150?C; R GS = 20 k ?-500V V GS Gate-source voltage -± 30V I D Continuous drain current T mb = 25 ?C; V GS = 10 V -8.5A T mb = 100 ?C; V GS = 10 V - 5.4A I DM Pulsed drain current T mb = 25 ?C -34A P D
Total dissipation
T mb = 25 ?C
-147W T j , T stg
Operating junction and - 55
150
?C
storage temperature range
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER CONDITIONS
MIN.MAX.UNIT E AS
Non-repetitive avalanche Unclamped inductive load, I AS = 7.4 A;-531
mJ
energy
t p = 0.22 ms; T j prior to avalanche = 25?C;V DD ≤ 50 V; R GS = 50 ?; V GS = 10 V; refer to fig:17E AR Repetitive avalanche energy 1
I AR = 8.5 A; t p = 2.5 μs; T j prior to
-13mJ avalanche = 25?C; R GS = 50 ?; V GS = 10 V;refer to fig:18
I AS , I AR
Repetitive and non-repetitive -
8.5
A
avalanche current
123
tab
1 pulse width and repetition rate limited by T j max.
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT R th j-mb Thermal resistance junction --0.85K/W to mounting base
R th j-a
Thermal resistance junction in free air
-
60
-K/W
to ambient
ELECTRICAL CHARACTERISTICS
T j = 25 ?C unless otherwise specified SYMBOL PARAMETER
CONDITIONS
MIN.TYP.MAX.UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; I D = 0.25 mA 500--V voltage
?V (BR)DSS /Drain-source breakdown V DS = V GS ; I D = 0.25 mA
-0.1-%/K ?T j voltage temperature
coefficient
R DS(ON)Drain-source on resistance V GS = 10 V; I D = 4.8 A -0.60.85?V GS(TO)Gate threshold voltage V DS = V GS ; I D = 0.25 mA 2.0 3.0 4.0V g fs Forward transconductance V DS = 30 V; I D = 4.8 A 3.56-S I DSS Drain-source leakage current V DS = 500 V; V GS = 0 V
-125μA V DS = 400 V; V GS = 0 V; T j = 125 ?C
-40250μA I GSS Gate-source leakage current V GS = ±30 V; V DS = 0 V
-10200nA Q g(tot)Total gate charge I D = 8.5 A; V DD = 400 V; V GS = 10 V -5580nC Q gs Gate-source charge
- 5.57nC Q gd Gate-drain (Miller) charge -3045nC t d(on)Turn-on delay time V DD = 250 V; R D = 30 ?;-18-ns t r
Turn-on rise time R G = 9.1 ?
-37-ns t d(off)Turn-off delay time -80-ns t f Turn-off fall time
-36-ns L d Internal drain inductance Measured from tab to centre of die
- 3.5-nH L d Internal drain inductance Measured from drain lead to centre of die - 4.5-nH L s Internal source inductance Measured from source lead to source -7.5-nH bond pad
C iss Input capacitance V GS = 0 V; V DS = 25 V; f = 1 MHz
-960-pF C oss Output capacitance -140-pF C rss
Feedback capacitance
-80
-pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T j = 25 ?C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT I S Continuous source current T mb = 25?C --8.5A (body diode)
I SM Pulsed source current (body T mb = 25?C
--34A diode)
V SD Diode forward voltage I S = 8.5 A; V GS = 0 V
-- 1.2V t rr Reverse recovery time I S = 8.5 A; V GS = 0 V; dI/dt = 100 A/μs
-440-ns Q rr
Reverse recovery charge
- 6.4
-μC
MECHANICAL DATA
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to mounting instructions for SOT78 (TO220AB) package.
3. Epoxy meets UL94 V0 at 1/8".
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information
Where application information is given, it is advisory and does not form part of the specification.
? Philips Electronics N.V. 1999
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LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.