IRGB4064DPBF中文资料
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGB4064DPbF
https://www.wendangku.net/doc/c117256467.html,
TO-220AB
C
E C
G PD - 97113
Features
?Low V CE (on) Trench IGBT Technology ?Low Switching Losses
?Maximum Junction temperature 175 °C ?5μs SCSOA ?Square RBSOA
?100% of The Parts Tested for I LM
?Positive V CE (on) Temperature Coefficient.?Ultra Fast Soft Recovery Co-pak Diode ?Tighter Distribution of Parameters ?
Lead-Free Package
Benefits
?High Efficiency in a Wide Range of Applications
?Suitable for a Wide Range of Switching Frequencies due to Low V CE (ON) and Low Switching Losses
?Rugged Transient Performance for Increased Reliability ?Excellent Current Sharing in Parallel Operation ?Low EMI
IRGB4064DPbF
Notes:
V CC = 80% (V CES ), V GE = 15V, L = 28 μH, R G = 22 ?. Pulse width limited by max. junction temperature. R θ is measured at T J approximately 90°C
Refer to AN-1086 for guidelines for measuring V (BR)CES safely
IRGB4064DPbF
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 5 - Typ. IGBT Output Characteristics
T J = -40°C; tp = 80μs
Fig. 6 - Typ. IGBT Output Characteristics
T J = 25°C; tp = 80μs
20
40
60
80100120140160180 T C (°C)
04812162024I C (A )
20
40
60
80100120140160180 T C (°C)
020406080100120P t o t (W )
2
4
6
8
10
V CE (V)
0102030
40
I C E (A )
2
4
6
8
10
V CE (V)
0.1
1
10100
I C (A )
Fig. 10 - Typical V CE vs. V GE
T J = 25°C
Fig. 12 - Typ. Transfer Characteristics
V CE = 50V; tp = 10μs
Fig. 11 - Typical V CE vs. V GE
T J = 175°C 0
5
1015
20
V GE (V)
10
20
30
40
I C E (A )
01020
30
40
I C E (A )
510
1520
V GE (V)
5
10
15
20
V GE (V)
IRGB4064DPbF
Fig. 13 - Typ. Energy Loss vs. I C
T J = 175°C; L = 1mH; V CE = 400V, R G = 22?; V GE = 15V.
Fig. 15 - Typ. Energy Loss vs. R G
T J = 175°C; L = 1mH; V CE = 400V, I CE = 10A; V GE = 15V
Fig. 14 - Typ. Switching Time vs. I C T J = 175°C; L=1mH; V CE = 400V
R G = 22?; V GE = 15V
Fig. 16- Typ. Switching Time vs. R G T J = 175°C; L=1mH; V CE = 400V
I CE = 10A; V GE = 15V
Fig. 17 - Typical Diode I RR vs. I F
T J = 175°C Fig. 18 - Typical Diode I RR vs. R G
T J = 175°C; I F = 10A
4
812162024
I C (A)
0100200300400500600E n e r g y (μJ )
4
8
12
16
20
24
I C (A)
110
1001000
S w i c h i n g T i m e (n s )
25
50
75
100
125
R G (?)
050100150200250300350E n e r g
y (μJ )
25
50
75
100
125
R G (?)
10
100
1000
S w i c h i n g T i m e (n s )
4
8
12
16
20
24
I F (A)04
8
12
16
20
24
I R R (A )
25
50
75
100
125
R
G (?)
04
8
12
16
20
I R R (A )
IRGB4064DPbF
Fig. 20 - Typical Diode Q RR
V CC = 400V; V GE = 15V; T J = 175°C
Fig. 19- Typical Diode I RR vs. di F /dt
V CC = 400V; V GE = 15V;I CE = 10A; T J = 175°C
Fig. 24 - Typical Gate Charge vs. V GE
I CE = 10A, L=600μH
Fig. 23- Typ. Capacitance vs. V CE
V GE = 0V; f = 1MHz
Fig. 22- Typ. V GE vs Short Circuit Time
V CC =400V, T C =25°C
Fig. 21 - Typical Diode E RR vs. I F
T J = 175°C
200
400
600
800
1000
1200
di F /dt (A/μs)
510
15
20
I R R (A
)
2
4
6
810121416182022
I F (A)
050100
150200250300I R R (A )
8
10
1214
16
V GE (V)
2
4681012
1416
T i m e (μs )
1020304050607080
Current (A)
500
1000
1500
di F /dt (A/μs)
300
400
500
600700800
900Q R
R (n C )
4
8
12
16
20
24
Q G , Total Gate Charge (nC)
02
46
81012
1416
20
40
60
80
100
V CE (V)
110
100
1000
C a p a c i t a n c e (p F )
IRGB4064DPbF
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
t 1 , Rectangular Pulse Duration (sec)
T h e r m a l R e s p o n s e ( Z t h J C )
t 1 , Rectangular Pulse Duration (sec)
T h e r m a l R e s p o n s e ( Z )
IRGB4064DPbF
Fig.C.T.1 - Gate Charge Circuit (turn-off)Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4
- Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - Typical Filter Circuit for
V (BR)CES Measurement
IRGB4064DPbF
Fig. WF1 - Typ. Turn-off Loss Waveform @ T J = 175°C using Fig. CT.4Fig. WF2 - Typ. Turn-on Loss Waveform @ T J = 175°C using Fig. CT.4
WF.3- Typ. Reverse Recovery Waveform @ T J = 175°C using CT.4WF.4- Typ. Short Circuit Waveform @ T J = 25°C using CT.3
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at https://www.wendangku.net/doc/c117256467.html, for sales contact information. 11/06