文档库 最新最全的文档下载
当前位置:文档库 › STPR1620CT

STPR1620CT

STPR1620CT
STPR1620CT

STPR1620CG STPR1620CT

?

July 1999-Ed:2B ULTRA-FAST RECOVERY RECTIFIER DIODES

D 2PAK STPR1620CG

SUITED FOR SMPS LOW LOSSES

LOW FORWARD AND REVERSE RECOVERY TIME

HIGH SURGE CURRENT CAPABILITY

FEATURES

Low cost dual center tap rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters.

Packaged in D 2PAK or TO-220AB,this device is intended for use in low voltage,high frequency inverters,free wheeling and polarity protection applications.

DESCRIPTION

Symbol Parameter

Value Unit V RRM Repetitive peak reverse voltage 200V I F(RMS)RMS forward current 20A I F(AV)Average forward current δ=0.5

Tc=120°C Per diode

Per device 816A I FSM Surge non repetitive forward current tp=10ms sinusoidal

80A T stg Storage temperature range

-65to +150

°C Tj

Maximum operating junction temperature

150

°C

ABSOLUTE RATINGS (limiting values,per diode)K

K A2

A1

A1

K

A2

I F(AV)2x 8A V RRM 200V Tj (max)150°C V F (max)0.99V trr (max)

30ns

MAIN PRODUCTS CHARACTERISTICS

TO-220AB STPR1620CT

K

A1

A21/6

Symbol Test conditions Min.Typ.Max.Unit I R *T j =25°C V R =V RRM

50μA T j =100°C 0.2

0.6mA V F **

T j =125°C I F =8A 0.80.99V

T j =125°C I F =16A 0.95

1.20T j =25°C

I F =16A

1.25

Pulse test :*tp =5ms,δ<2%

**tp =380μs,δ<2%

To evaluate the conduction losses use the following equation :P =0.78x I F(AV)+0.026x I F 2(RMS)

STATIC ELECTRICAL CHARACTERISTICS Symbol Test conditions Min.

Typ.

Max.Unit trr T j =25°C I F =0.5A I R =1A

Irr =0.25A 30

ns tfr T j =25°C I F =3A

V FR =1.1x V F max dI F /dt =50A/μs 20ns V FP

T j =25°C

I F =3A

dI F /dt =50A/μs

3

V

RECOVERY CHARACTERISTICS Symbol Parameter

Value Unit R th (j-c)Junction to case

Per diode 3.0°C/W Total 1.8°C/W R th (c)

Coupling

0.6

°C/W

When the diodes 1and 2are used simultaneously :

? Tj(diode 1)=P(diode 1)x Rth(j-c)(Per diode)+P(diode 2)x Rth(c)THERMAL RESISTANCES STPR1620CG /STPS1620CT

2/6

Fig.2:Peak current versus form factor(per diode).

Fig.3:Average current versus ambient temperature(δ:0.5,per diode).Fig.4:Non repetitive surge peak forward current versus overload duration(maximum values,per diode).

Fig.1:Average forward power dissipation versus average forward current(per diode).

Fig.5:Relative variation of thermal transient impedance junction to case versus pulse duration (per diode).Fig.6:Forward voltage drop versus forward current(maximum values,per diode).

STPR1620CG/STRP1620CT

3/6

H

Fig.7:Junction capacitance versus reverse voltage applied (typical values,per diode).

Fig.8:Recovery charges versus dI F /dt (per diode).

Fig.10:Dynamic parameters versus junction temperature(per diode).

Fig.9:Peak reverse current versus dI F /dt (per diode).STPR1620CG /STPS1620CT

4/6

PACKAGE MECHANICAL DATA D 2PAK (Plastic)

A

C2

D

R

A2M

V2

C

A1

G

L

L3

L2

B

B2E

*

*FLA T ZONE NO LESSTHAN 2mm

REF.DIMENSIONS

Millimeters Inches Min.Max.Min.Max.A

4.40 4.600.1730.181A1 2.49 2.690.0980.106A20.030.230.0010.009B 0.700.930.0270.037B2 1.14 1.700.0450.067C 0.450.600.0170.024C2 1.23 1.360.0480.054D 8.959.350.3520.368E 10.0010.400.3930.409G 4.88

5.280.1920.208L 15.0015.850.5900.624L2 1.27 1.400.0500.055L3 1.40 1.750.0550.069M 2.40 3.200.0940.126R 0.40typ.0.016typ.V2

0°8°0°8°

8.90

3.70

1.30

5.08

16.90

10.30

FOOT PRINT (in millimeters)

STPR1620CG /STRP1620CT

5/6

Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specifications mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-proval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics ?1999STMicroelectronics -Printed in Italy -All rights reserved.

STMicroelectronics GROUP OF COMPANIES

Australia -Brazil -China -Finland -France -Germany -Hong Kong -India -Italy -Japan -Malaysia

Malta -Morocco -Singapore -Spain -Sweden -Switzerland -United Kingdom -U.S.A.

https://www.wendangku.net/doc/c417911833.html,

PACKAGE MECHANICAL DATA TO-220AB (JEDEC outline)

A

C

D L7

Dia

L5

L6

L9

L4

F H2G

G1

L2

F2F1

E M

REF.

DIMENSIONS

Millimeters Inches Min.Max.Min.Max.A 4.40 4.600.1730.181C 1.23 1.320.0480.051D 2.40 2.720.0940.107E 0.490.700.0190.027F 0.610.880.0240.034F1 1.14 1.700.0440.066F2 1.14 1.700.0440.066G 4.95 5.150.1940.202G1 2.40 2.700.0940.106H21010.400.3930.409L216.4typ.0.645typ.L413140.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.20 6.600.2440.259L9 3.50 3.930.1370.154M 2.6typ.0.102typ.Diam.

3.75 3.850.1470.151

Ordering type Marking Package Weight Base qty Delivery

mode STPR1620CT STPR1620CT TO-220AB 2.23g 50Tube STPR1620CG

STPR1620CG

D 2PAK 1.48g 50Tube STPR1620CG-TR STPR1620CG D 2PAK

1.48g

1000

Tape &reel

Cooling method :by conduction (C)Recommended torque value :0.55N.m.Maximum torque value :0.7N.m.Epoxy meets UL94,V0

STPR1620CG /STPS1620CT

6/6

相关文档