STGY40NC60V中文资料
STGY40NC60VD
N-CHANNEL 50A - 600V - Max247
Very Fast PowerMESH? IGBT Table 1: General Features
s HIGH CURRENT CAPABILITY
s HIGH FREQUENCY OPERATION UP TO
50 KHz
s LOSSES INCLUDE DIODE RECOVERY ENERGY
s OFF LOSSES INCLUDE TAIL CURRENT
s LOWER C RES / C IES RATIO
s VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE
s NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTION
DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Pow-erMESH? IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency.
APPLICATIONS
s HIGH FREQUENCY INVERTERS
s SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
s UPS
s MOTOR DRIVERS
Table 2: Order Codes
TYPE V CES V CE(sat) (Max)
@25°C
I C
@100°C
STGY40NC60VD600 V< 2.5 V50 A
SALES TYPE MARKING PACKAGE PACKAGING
STGY40NC60VD GY40NC60VD Max247TUBE
Rev.8
1/11 July 2004
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Table 3: Absolute Maximum ratings
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)Table 5: Off
Table 6: On
(#) Calculated according to the iterative formula:Symbol Parameter
Value Symbol V CES Collector-Emitter Voltage (V GS = 0)600V V ECR Reverse Battery Protection 20V V GE Gate-Emitter Voltage
± 20V I C Collector Current (continuous) at 25°C (#)80A I C Collector Current (continuous) at 100°C (#)50A I CM (1)Collector Current (pulsed)
200A I F Diode R MS Forward Current at T C =25°C 30 A
P TOT Total Dissipation at T C = 25°C 260W Derating Factor 2.08W/°C T stg Storage Temperature
– 55 to 150
°C
T j
Operating Junction Temperature
Min.
Typ.Max.Unit Rthj-case Thermal Resistance Junction-case (IGBT)----0.48°C/W Rthj-case Thermal Resistance Junction-case (Diode)---- 1.5°C/W Rthj-amb Thermal Resistance Junction-ambient
----50
°C/W T L
Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.)
300
°C
Symbol Parameter
Test Conditions
Min.Typ.
Max.
Unit V BR(CES)Collectro-Emitter Breakdown Voltage
I C = 1 mA, V GE = 0600
V
I CES
Collector-Emitter Leakage Current (V CE = 0)V GE = Max Rating Tc=25°C Tc=125°C
101μA mA I GES
Gate-Emitter Leakage Current (V CE = 0)
V GE = ± 20 V , V CE = 0
± 100
nA
Symbol Parameter
Test Conditions Min.Typ.
Max.Unit V GE(th)Gate Threshold Voltage V CE = V GE , I C = 250 μA 3.75
5.75V V CE(SAT)
Collector-Emitter Saturation Voltage
V GE = 15 V, I C = 40A, Tj= 25°C V GE = 15 V, I C = 40A, Tj= 125°C
1.91.7
2.5
V V
I C T C ()T JMAX T C
–R THJ C –V CESAT MAX ()T C I C
,()
×-------------------------------------------------------------------------------------------------=
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ELECTRICAL CHARACTERISTICS (CONTINUED)Table 7: Dynamic
Table 8: Switching On
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
Table 9: Switching Off
(3)Turn-off losses include also the tail of the collector current.
Symbol Parameter
Test Conditions
Min.
Typ.Max.
Unit g fs (1)Forward Transconductance V CE = 15 V , I C = 20 A
20S C ies C oes C res Input Capacitance Output Capacitance Reverse Transfer Capacitance
V CE = 25V, f = 1 MHz, V GE = 0
4550350105pF pF pF Q g Q ge Q gc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge V CE = 390 V, I C = 40 A, V GE = 15V, (see Figure 21)
2143096
nC nC nC I CL
Turn-Off SOA Minimum Current
V clamp = 480 V , Tj = 150°C R G = 100 ?, V GE = 15V
200
A
Symbol Parameter
Test Conditions
Min.
Typ.Max.
Unit t d(on)t r (di/dt)on Eon (2)Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses V CC = 390 V, I C = 40 A
R G =3.3?, V GE = 15V, Tj= 25°C (see Figure 19)
43172060330450
ns ns A/μs μJ t d(on)t r (di/dt)on Eon (2)
Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses
V CC = 390 V, I C = 40 A R G =3.3?, V GE = 15V, Tj= 125°C
(see Figure 19)
42191900640
ns ns A/μs μJ
Symbol Parameter
Test Conditions
Min.
Typ.Max.
Unit t r (V off )Off Voltage Rise Time V cc = 390 V, I C = 40 A, R GE = 3.3 ? , V GE = 15 V T J = 25 °C
(see Figure 19)
25ns t d (off )Turn-off Delay Time 140ns t f Current Fall Time 45ns
E off (3)Turn-off Switching Loss 720970μJ E ts Total Switching Loss 10501420μJ
t r (V off )Off Voltage Rise Time V cc = 390 V, I C = 40 A, R GE = 3.3 ? , V GE = 15 V Tj = 125 °C (see Figure 19)
60ns t d (off )Turn-off Delay Time 170ns t f Current Fall Time 77ns
E off (3)Turn-off Switching Loss 1400μJ E ts
Total Switching Loss
2040
μJ
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Table 10: Collector-Emitter Diode
Symbol Parameter
Test Conditions
Min.
Typ.Max.Unit V f Forward On-Voltage I f = 20 A
I f = 20 A, Tj = 125 °C 1.51 2.2
V V t rr t a Q rr I rrm S Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode I f = 20 A ,V R = 40 V,
Tj = 25°C, di/dt = 100 A/μs (see Figure 22)
44326630.375ns ns nC A t rr t a Q rr I rrm S
Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode
I f = 20 A ,V R = 40 V,
Tj =125°C, di/dt = 100 A/μs (see Figure 22)
88562375.40.57
ns ns nC A
STGY40NC60VD
Figure 3: Output Characteristics
Figure 6: Transfer Characteristics
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Figure 9: Normalized Breakdown Voltage vs
Figure 12: Gate Charge vs Gate-Emitter Volt-age
STGY40NC60VD
Figure 15: Thermal Impedance
Figure 18: Ic vs Frequency
For a fast IGBT suitable for high frequency appli-cations, the typical collector current vs. maximum operating frequency curve is reported. That fre-quency is defined as follows:
f MAX = (P D - P C) / (E ON + E OFF)
1) The maximum power dissipation is limited by
maximum junction to case thermal resistance:
P D = ?T / R THJ-C
considering ?T = T J - T C = 125 °C- 75 °C = 50°C 2) The conduction losses are:
P C = I C * V CE(SAT) * δ
with 50% of duty cycle, V CESAT typical value @125°C.
3) Power dissipation during ON & OFF commuta-tions is due to the switching frequency:
P SW = (E ON + E OFF) * freq.
4) Typical values @ 125°C for switching losses are used (test conditions: V CE = 390V, V GE = 15V, R G = 3.3 Ohm). Furthermore, diode recovery en-ergy is included in the E ON (see note 2), while the tail of the collector current is included in the E OFF measurements (see note 3).
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Figure 19: Test Circuit for Inductive Load Switching
Figure 20: Switching Waveforms
Figure 21: Gate Charge Test Circuit
Figure 22: Diode Recovery Times Waveform
STGY40NC60VD Table 11: Revision History
Date Revision Description of Changes 07-June-20047Stylesheet update.
Added Max Values see Table 8 and 9
Added Figure 22
14-Jul-20048Figure 19 updated, some datas have been modified
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