IRGPF40F中文资料

C-261

IRGPF40F

Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Parameter Min.

Typ.

Max.

Units

R θJC Junction-to-Case

——0.77R θCS Case-to-Sink, flat, greased surface

—0.24—°C/W R θJA Junction-to-Ambient, typical socket mount ——40Wt

Weight

—

6 (0.21)

—

g (oz)

Features

? Switching-loss rating includes all "tail" losses ? Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve

V CES = 900V V CE(sat) ≤ 3.3V

@V GE = 15V, I C = 17A

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.

Absolute Maximum Ratings

Parameter

Max.

Units

V CES

Collector-to-Emitter Voltage 900V I C @ T C = 25°C Continuous Collector Current 31I C @ T C = 100°C Continuous Collector Current 17A

I CM Pulsed Collector Current

62I LM Clamped Inductive Load Current 62V GE Gate-to-Emitter Voltage

±20V E ARV

Reverse Voltage Avalanche Energy 15mJ P D @ T C = 25°C Maximum Power Dissipation 160W

P D @ T C = 100°C Maximum Power Dissipation 65

T J Operating Junction and

-55 to +150

T STG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)

Mounting torque, 6-32 or M3 screw.

10 lbf?in (1.1N?m)

Thermal Resistance

PD - 9.770A

Revision 0

IRGPF40F

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C-263

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK )

Fig. 2 - Typical Output Characteristics Fig. 3

- Typical Transfer Characteristics

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Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature

Fig. 4 - Maximum Collector Current vs.

Case Temperature

IRGPF40F

IRGPF40F

C-265

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