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STB11NM80中文资料

STP11NM80 - STF11NM80

STB11NM80 - STW11NM80 N-CHANNEL 800V - 0.35 ? - 11 A TO-220 /FP/D2PAK/TO-247

MDmesh? MOSFET Table 1: General Features

■TYPICAL R DS(on) = 0.35 ?

■LOW GATE INPUT RESISTANCE

■LOW INPUT CAPACITANCE AND GATE CHARGE

■BEST R DS(on)*Qg IN THE INDUSTRY

DESCRIPTION

The MDmesh? associates the Multiple Drain pro-cess with the Company’s PowerMesh? horizontal layout assuring an oustanding low on-resistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competi-tion’s products.

APPLICATIONS

The 800 V MDmesh? family is very suitable for single switch applications in particular for Flyback and Forward converter topologies and for ignition circuits in the field of lighting.

Table 2: Order Codes

TYPE V DSS R DS(on)R DS(on)*Q g I D

STP11NM80 STF11NM80 STB11NM80 STW11NM80800 V

800 V

< 0.40 ?

14 ??nC

11 A

SALES TYPE MARKING PACKAGE PACKAGING

STP11NM80P11NM80TO-220TUBE

STF11NM80F11NM80TO-220FP TUBE

STB11NM80T4B11NM80D2PAK TAPE & REEL

STW11NM80W11NM80TO-247TUBE

Rev. 2

1/14 October 2005

STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by safe operating area

(*) Limited only by the Maximum Temperature Allowed

Table 4: Thermal Data

Table 5: Avalanche Characteristics

Symbol

Parameter

Value

Unit

TO-220/D 2PAK

TO-247

TO-220FP

V DS Drain-source Voltage (V GS = 0)800V V DGR Drain-gate Voltage (R GS = 20 k ?)800V V GS Gate- source Voltage

± 30

V I D Drain Current (continuous) at T C = 25°C 1111 (*)A I D Drain Current (continuous) at T C = 100°C 4.7 4.7 (*)A I DM ( )Drain Current (pulsed)4444 (*)A P TOT Total Dissipation at T C = 25°C 15035W Derating Factor

1.2

0.28W /°C T j T stg

Operating Junction Temperature Storage Temperature

-65 to 150°C TO-220/D 2PAK

TO-247

TO-220FP

Unit Rthj-case Thermal Resistance Junction-case Max 0.83

3.6

°C/W Rthj-amb

Thermal Resistance Junction-ambient Max 62.5°C/W T l

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol Parameter

Max Value

Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)

2.5A E AS

Single Pulse Avalanche Energy

(starting T j = 25 °C, I D = 2.5A, V DD = 50 V)

400

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STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80

ELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)Table 6: On/Off

Table 7: Dynamic

Table 8: Source Drain Diode

Note: 1.Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.

2.Pulse width limited by safe operating area.

Symbol Parameter

Test Conditions

Min.Typ.

Max.

Unit V (BR)DSS Drain-source

Breakdown Voltage I D = 250 μA, V GS = 0

800

V I DSS Zero Gate Voltage

Drain Current (V GS = 0)V DS = Max Rating

V DS = Max Rating, T C = 125 °C 10100μA μA I GSS Gate-body Leakage Current (V DS = 0)V GS = ± 30V

100nA V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 μA 3

45V R DS(on)

Static Drain-source On Resistance

V GS = 10V, I D =5.5 A

0.35

0.40

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit g fs (1)Forward Transconductance V DS > I D(on) x R DS(on)max,I D = 7.5 A

8S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance

V DS = 25 V, f = 1 MHz, V GS = 0

163075030pF pF pF R G

Gate Input Resistance

f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain

2.7

t d(on)t r t d(off)t f Turn-on Delay Time Rise Time

Turn-off Delay Time Fall Time

V DD = 400 V, I D = 5.5 A R G = 4.7? V GS = 10 V

(Resistive Load see, Figure 4)22174615ns ns ns ns Q g Q gs Q gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

V DD = 640 V, I D = 11 A,V GS = 10V

43.611.621

nC nC nC

Symbol Parameter

Test Conditions

Min.

Typ.

Max.Unit I SD I SDM (2)Source-drain Current

Source-drain Current (pulsed)1144A A V SD (1)Forward On Voltage I SD = 11 A, V GS = 00.86

V t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 11 A, di/dt = 100 A/μs V DD = 50 V, T j = 25°C (see test circuit, Figure 5)6127.2223.6ns μC A t rr Q rr I RRM

Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current

I SD = 11 A, di/dt = 100 A/μs V DD = 50 V, T j = 150°C (see test circuit, Figure 5)

97011.2523.2

ns μC A

STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80

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Figure 3: Safe Operating Area For D 2PAK/

Figure 6: Safe Operating Area For TO-220FP

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STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80

Figure 9: Transfer Characteristics

Figure 12: Normalized Gate Threshold Voltage

STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80

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Figure 15: Normalized On Resistance vs Tem-

tics

Figure 17: Normalized BV DSS vs Temperature

STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80

Figure 18: Unclamped Inductive Load Test Cir-cuit

Figure 19: Switching Times Test Circuit For Resistive Load Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times

Figure 21: Unclamped Inductive Wafeform

Figure 22: Gate Charge Test Circuit

STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80

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TAPE AND REEL SHIPMENT

D2PAK FOOTPRINT

* on sales type

DIM.

mm inch

MIN.MAX.MIN.MAX.

A33012.992

B 1.50.059

C12.813.20.5040.520

D20.20795

G24.426.40.960 1.039

N100 3.937

T30.4 1.197

BASE QTY BULK QTY

10001000

REEL MECHANICAL DATA DIM.

mm inch

MIN.MAX.MIN.MAX.

A010.510.70.4130.421

B015.715.90.6180.626

D 1.5 1.60.0590.063

D1 1.59 1.610.0620.063

E 1.65 1.850.0650.073

F11.411.60.4490.456

K0 4.8 5.00.1890.197

P0 3.9 4.10.1530.161

P111.912.10.4680.476

P2 1.9 2.10.0750.082

R50 1.574

T0.250.350.00980.0137

W23.724.30.9330.956

TAPE MECHANICAL DATA

STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 Figure 23: Revision History

Date Revision Description of Changes 29-Jul-20041Final Document

20-Oct-20052Modified value on Figure 17

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STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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