CM800DZ-34H中文资料
INSULATED TYPE
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
MAXIMUM RATINGS (Tj = 25°C)
V GE = 0V V CE = 0V T C = 25°C Pulse
(Note 1)T C = 25°C Pulse
(Note 1)
T C = 25°C, IGBT part
——
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.Main terminals screw M8Mounting screw M6
Auxiliary terminals screw M4Typical value
1700±20800160080016005000–40 ~ +150–40 ~ +12540006.67 ~ 13.002.84 ~ 6.000.88 ~ 2.00
1.0
V V A A A A W °C °C V N·m N·m N·m kg
Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass
Collector current Emitter current
Symbol Item
Conditions
Unit Ratings V V V CE = V CES , V GE = 0V V GE = V GES , V CE = 0V T j = 25°C
T j = 125°C V CC = 850V, I C = 800A, V GE = 15V V CC = 850V, I C = 800A V GE1 = V GE2 = 15V R G = 3.3?
Resistive load switching operation I E = 800A, V GE = 0V I E = 800A
die / dt = –1600A / μs
Junction to case, IGBT part (Per 1/2 module)Junction to case, FWDi part (Per 1/2 module)
Case to fin, conductive grease applied (Per 1/2 module)
I C = 80mA, V CE = 10V
I C = 800A, V GE = 15V (Note 4)
V CE = 10V V GE = 0V
120.53.64—————1.602.002.700.803.382.70—0.0250.043—
mA μA nF nF nF μC μs μs μs μs V μs μC K/W K/W K/W
——2.803.20729.03.66.6————2.60—150——0.020
——————————————————
5.54.5
6.5Collector cutoff current Gate-emitter
threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance
Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time
Emitter-collector voltage Reverse recovery time Reverse recovery charge Contact thermal resistance
Min Typ Max I CES I GES C ies C oes C res Q G t d (on)t r
t d (off)t f
V EC (Note 2)t rr (Note 2)Q rr (Note 2)R th(j-c)Q R th(j-c)R R th(c-f)
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol Item
Conditions
V GE(th)V CE(sat)Limits Unit Note 1.
Pulse width and repetition rate should be such that the device junction temp. (T j ) does not exceed T jmax rating.2.I E , V EC , t rr , Q rr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.3.Junction temperature (T j ) should not increase beyond 150°C.
4.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Thermal resistance 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
V CES V GES I C I CM
I E (Note 2)I EM (Note 2)P C (Note 3)T j T stg V iso
——
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE