NTJD4001NT1G;NTJD4001NT1;NTJD4001NT2G;中文规格书,Datasheet资料
NTJD4001N, NVTJD4001N
Small Signal MOSFET
30 V, 250 mA, Dual N?Channel, SC?88
Features
?Low Gate Charge for Fast Switching
?Small Footprint ? 30% Smaller than TSOP?6
?ESD Protected Gate
?AEC Q101 Qualified ? NVTJD4001N
?These Devices are Pb?Free and are RoHS Compliant
Applications
?Low Side Load Switch
?Li?Ion Battery Supplied Devices ? Cell Phones, PDAs, DSC ?Buck Converters
?Level Shifts
MAXIMUM RATINGS (T J= 25°C unless otherwise stated)
Parameter Symbol Value Units Drain
?to?Source Voltage V DSS30V Gate?to?Source Voltage V GS±20V
Continuous Drain Current (Note 1)Steady
State
T A = 25 °C I D250mA
T A = 85 °C180
Power Dissipation (Note 1)Steady
State
T A = 25 °C P D
272mW
Pulsed Drain Current t =10 m s I DM600mA Operating Junction and Storage Temperature T J, T STG?55 to
150
°C Source Current (Body Diode)I S250mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T L260°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.Surface mounted on FR4 board using min pad size
(Cu area = 0.155 in sq [1 oz] including traces).
SOT?363
CASE 419B
STYLE 26
MARKING DIAGRAM &
PIN ASSIGNMENT
https://www.wendangku.net/doc/d42068851.html,
TE M G
G
1
6
TE= Device Code
M= Date Code
G
= Pb?Free Package
D1G2S2
S1G1D2
(Note: Microdot may be in either location)
V(BR)DSS R DS(on) TYP I D Max
30 V
1.0 W @ 4.0 V
1.5 W @
2.5 V
250 mA Device Package Shipping?
ORDERING INFORMATION
NTJD4001NT1G SOT?363
(Pb?Free)
3000 / Tape &
Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
SOT?363
SC?88 (6 LEADS)
D1
G2
S2 S1
G1
D2
NVTJD4001NT1G SOT?363
(Pb?Free)
3000 / Tape &
Reel
ELECTRICAL CHARACTERISTICS (T J= 25°C unless otherwise stated)
Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage V(BR)DSS V GS= 0 V, I D= 100 m A30V Drain?to?Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/T J56mV/ °C Zero Gate Voltage Drain Current I DSS V GS= 0 V, V DS= 30 V 1.0m A Gate?to?Source Leakage Current I GSS V DS= 0 V, V GS= ±10V±1.0m A ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage V GS(TH)V GS= V DS, I D = 100 m A0.8 1.2 1.5V Gate Threshold Temperature
Coefficient
V GS(TH)/T J?3.2mV/ °C Drain?to?Source On Resistance R DS(on)V GS= 4.0V, I D= 10 mA 1.0 1.5W
V GS= 2.5V, I D= 10 mA 1.5 2.5
Forward Transconductance g FS V DS= 3.0V, I D= 10 mA80mS CHARGES AND CAPACITANCES
Input Capacitance C ISS V GS= 0 V, f = 1.0 MHz,
V DS= 5.0V 2033pF
Output Capacitance C OSS1932 Reverse Transfer Capacitance C RSS7.2512
Total Gate Charge Q G(TOT)V GS= 5.0 V, V DS= 24V,
I D= 0.1A 0.9 1.3nC
Threshold Gate Charge Q G(TH)0.2 Gate?to?Source Charge Q GS0.3 Gate?to?Drain Charge Q GD0.2 SWITCHING CHARACTERISTICS (Note 3)
Turn?On Delay Time td(ON)V GS= 4.5V, V DD= 5.0V,
I D= 10 mA, R G= 50 W 17ns
Rise Time tr23 Turn?Off Delay Time td(OFF)94 Fall Time tf82 DRAIN?SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V SD V GS= 0 V,
I S= 10 mA T J= 25°C0.650.7V T J= 125°C0.45
Reverse Recovery Time t RR V GS= 0 V, dI S/dt = 8.0 A/m s,
I S= 10 mA
12.4ns
2.Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
3.Switching characteristics are independent of operating junction temperatures.
1.2
0.4
V DS , DRAIN ?TO ?SOURCE VOLTAGE (VOLTS)
I D , D R A I N C U R R E N T (A M P S )
Figure 1. On ?Region Characteristics
1.221.6
2.2
0.1
0.060.02 1.401
Figure 2. Transfer Characteristics
V GS , GATE ?TO ?SOURCE VOLTAGE (VOLTS)
0.5
0.25Figure 3. On ?Resistance vs. Drain Current and
Temperature
I D, DRAIN CURRENT (AMPS)
R D S (o n ), D R A I N ?T O ?S O U R C E R E S I S T A N C E (W )
I D , D R A I N C U R R E N T (A M P S )
Figure 4. On ?Resistance vs. Drain Current and
Gate Voltage
?Figure 5. On ?Resistance Variation with
Temperature T J , JUNCTION TEMPERATURE (°C)1.25
R D S (o n ), D R A I N ?T O ?S O U R C E R E S I S T A N C E (N O R M A L I Z E D )
0.8
0.005
0.205
Figure 6. Drain ?to ?Source Leakage Current
vs. Voltage
2
1.6
0.75
0.080.04 1.8
1.0V DS, DRAIN ?TO ?SOURCE VOLTAGE (VOLTS)
10000
10I D S S , L E A K A G E (n A )1000
100
0.0550.1050.1550.5
0.25I D, DRAIN CURRENT (AMPS)
R D S (o n ), D R A I N ?T O ?S O U R C E R E S I S T A N C E (W )
1.25
0.005
0.205
0.75
1.0
0.0550.1050.155
3020100GATE ?TO ?SOURCE OR DRAIN ?TO ?SOURCE VOLTAGE (VOLTS)
C , C A P A C I T A N C E (p F )
0.2Q G , TOTAL GATE CHARGE (nC)
V G S , G A T E ?T O ?S O U R C E V O L T A G E (V O L T S )
500.6
400.41
0.020V SD , SOURCE ?TO ?DRAIN VOLTAGE (VOLTS)
I S , S O U R C E C U R R E N T (
A M P S )
0.1Figure 7. Capacitance Variation
Figure 8. Gate ?to ?Source Voltage vs. Total
Gate Charge
Figure 9. Diode Forward Voltage vs. Current
0.80.040.060.08r (t ), E F F E C T I V E T R A N S I E N T T H E R M A L R E S P O N S E
PULSE TIME t,(s)
0.1
10
1000
100
1000
10
1
0.1
0.010.000001
1
Figure 10. Thermal Response
100
0.001
0.0001
0.00001
PACKAGE DIMENSIONS
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198
2.
2.CONTROLLING DIMENSION: INCH.
3.419B ?01 OBSOLETE, NEW STANDARD 419B ?02.
SC ?88/SC70?6/SOT ?363
CASE 419B ?02ISSUE W
DIM MIN NOM MAX MILLIMETERS
A 0.800.95 1.10A10.000.050.10A3b 0.100.210.30C 0.100.140.25D 1.80 2.00 2.200.0310.0370.0430.000
0.0020.0040.0040.0080.0120.0040.0050.0100.0700.0780.086MIN NOM MAX INCHES
0.20 REF 0.008 REF
H E E 1.15 1.25 1.35e 0.65 BSC L 0.100.200.302.00 2.10 2.200.0450.0490.053
0.026 BSC
0.0040.0080.0120.0780.0820.086*For additional information on our Pb ?Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 26:
PIN 1.SOURCE 1
2.GATE 1
3.DRAIN 2
4.SOURCE 2
5.GATE 2
6.DRAIN 1
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NTJD4001NT1G NTJD4001NT1NTJD4001NT2G