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BCV 62中文资料

PNP Silicon Double Transistor ? To be used as a current mirror

? Good thermal coupling and V BE matching ? High current gain

? Low collector-emitter saturation voltage

VPS05178

EHA00013

Type Marking Pin Configuration

Package 4 = E2 4 = E2 4 = E2

SOT-143 SOT-143 SOT-143

BCV 62A BCV 62B BCV 62C

3Js 3Ks 3Ls

1 = C

2 1 = C2 1 = C2

2 = C1 2 = C1 2 = C1

3 = E1 3 = E1 3 = E1

Maximum Ratings Parameter

Symbol Value Unit Collector-emitter voltage (transistor T1)

V CEO 30V

Collector-base voltage (open emitter)(transistor T1)V CBO 30Emitter-base voltage V EBS 6DC collector current I C 100mA

Peak collector current

I CM 200Base peak current (transistor T1)I BM 200Total power dissipation , T S = 99 °C P tot 300mW Junction temperature T j 150°C

Storage temperature

T stg

-65 (150)

Thermal Resistance Junction ambient 1)R thJA ≤240K/W

Junction - soldering point

R thJS

≤170

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu

Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter

Symbol

Unit

Values typ.

min.

max.

DC Characteristics of T1

-V

V (BR)CEO -30Collector-emitter breakdown voltage I C = 10 mA, I B = 0

-V (BR)CBO 30Collector-base breakdown voltage I C = 10 μA, I B = 0

-Emitter-base breakdown voltage I E = 10 μA, I C = 0 6--V (BR)EBO I CBO -15-Collector cutoff current V CB = 30 V, I E = 0 nA I CBO -5Collector cutoff current V CB = 30 V, I E = 0 , T A = 150 °C μA -h FE 100--

-DC current gain 1) I C = 0.1 mA, V CE = 5 V h FE DC current gain 1) I C = 2 mA, V CE = 5 V

125220420

180290520 220475800V CEsat

Collector-emitter saturation voltage1) I C = 10 mA, I B = 0.5 mA I C = 100 mA, I B = 5 mA

300650 75250mV

V BEsat

700850Base-emitter saturation voltage 1) I C = 10 mA, I B = 0.5 mA I C = 100 mA, I B = 5 mA --V BE(ON)

Base-emitter voltage 1) I C = 2 mA, V CE = 5 V I C = 10 mA, V CE = 5 V

600-

650-

750820

BCV 62A BCV 62B BCV 62C

1) Pulse test: t ≤ 300μs, D = 2%

Electrical Characteristics at T A = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min.typ.max.

DC Characteristics

Base-emitter forward voltage I E = 10 μA

I E = 250 mA V BES

0.4

1.8

Matching of transistor T1 and transistor T2 at I E2 = 0.5mA and V CE1 = 5V

T A = 25 °C

T A = 150 °C I C1 / I C2

0.7

1.3

Thermal coupling of transistor T1 and

transistor T2 1) T1: V CE = 5V

Maximum current of thermal stability of I C1

I E2-5-mA

AC characteristics of transistor T1

Transition frequency

I C = 10 mA, V CE = 5 V, f = 100 MHz

f T-250-MHz

Collector-base capacitance

V CB = 10 V, f = 1 MHz

C cb-3-pF

Emitter-base capacitance

V EB = 0.5 V, f = 1 MHz

C eb-8-

Noise figure

I C = 200 μA, V CE = 5 V, R S = 2 k?,

f = 1 kHz, ?f = 200 Hz

F-2-dB

Short-circuit input impedance

I C = 1 mA, V CE = 10 V, f = 1 kHz

h11e- 4.5-k?

Open-circuit reverse voltage transf.ratio

I C = 1 mA, V CE = 10 V, f = 1 kHz

h12e-2-10-4

Short-circuit forward current transf.ratio

I C = 1 mA, V CE = 10 V, f = 1 kHz

h21e100-900-

Open-circuit output admittance

I C = 1 mA, V CE = 10 V, f = 1 kHz

h22e-30-μS 1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm

Test circuit for current matching

EHN00003

= constant CO

Note: Voltage drop at contacts: V CO < 2/3 V T = 16mV

Characteristic for determination of V CE1 at specified R E range with I E2 as parameter under condition of I C1/I E2 = 1.3

EHN00004

VΙE2= constant

Note: BCV 62 with emitter resistors

Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy

Permissible pulse load

P totmax / P totDC = f (t p)

101

102

10101010100

totmax