STGB10NB40L 点火IGBT20A20V

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August 2003STGB10NB40LZ

N-CHANNEL CLAMPED 20A -D2PAK

INTERNALLY CLAMPED PowerMESH?IGBT

s POLYSILICON GATE VOLTAGE DRIVEN s LOW THRESHOLD VOLTAGE s LOW ON-VOLTAGE DROP s LOW GATE CHARGE

s HIGH CURRENT CAPABILITY

s

HIGH VOLTAGE CLAMPING FEATURE

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout,STMicroelectronics has designed an advanced family of IGBTs,the PowerMESH ?IGBTs,with outstanding

performances.The built in collector-gate zener exhibits a very precise

active clamping while the gate-emitter zener supplies an ESD protection.

APPLICATIONS

s AUTOMOTIVE IGNITION

ORDERING INFORMATION

TYPE V CES V CE(sat)I C STGB10NB40LZ

CLAMPED

<1.8 V

20A

SALES TYPE MARKING PACKAGE PACKAGING STGB10NB40LZT4

GB10NB40LZ

D

2PAK

TAPE &REEL

STGB10NB40LZ

2/10

ABSOLUTE MAXIMUM RATINGS

Pulse width limited by safe operating area

THERMAL DATA

ELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)OFF

ON (1)

Symbol Parameter

Value Unit V CES Collector-Emitter Voltage (V GS =0)CLAMPED

V V ECR Emitter-Collector Voltage 18V V GE Gate-Emitter Voltage

CLAMPED

V I C Collector Current (continuos)at T C =25°C 20A I C Collector Current (continuos)at T C =100°C 10A I CM ( )Collector Current (pulsed)40A

Eas Single Pulse Energy Tc =25°C 300mJ

P TOT Total Dissipation at T C =25°C 150W Derating Factor

1W/°C E SD ESD (Human Body Model)4KV T stg Storage Temperature

–55to 175

°C

T j

Operating Junction Temperature

Rthj-case Thermal Resistance Junction-case Max 1°C/W Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Symbol Parameter

Test Conditions

Min.Typ.Max.Unit BV (CES)Clamped Voltage

I C =2mA,V GE =0,Tj=-40°C to 150°C 380410

440

V BV (ECR)Emitter Collector Break-down Voltage

I C =75mA,Tj=25°C 18V BV GE Gate Emitter Break-down Voltage

I G =±2mA

12

16V I CES Collector cut-off Current (V GE =0)

V CE =15V,V GE =0,T j =150°C 10μA V CE =200V,V GE =0,T j =150°C 100μA I GES Gate-Emitter Leakage Current (V CE =0)V GE =±10V ,V CE =0

±700

μA R GE

Gate Emitter Resistance

20

K ?

Symbol Parameter

Test Conditions

Min.Typ.

Max.Unit V GE(th)Gate Threshold Voltage V CE =V GE ,I C =250μA,T C =-40°C to 150°C

0.6

2.2V V CE(SAT)

Collector-Emitter Saturation Voltage

V GE =4.5V,I C =10A,Tj=25°C 1.2 1.8

V V GE =4.5V,I C =20A,Tj=25°C

1.3V

3/10

STGB10NB40LZ

ELECTRICAL CHARACTERISTICS (CONTINUED)DYNAMIC

FUNCTIONAL CHARACTERISTICS

SWITCHING ON

SWITCHING OFF

(1)Pulse width limited by max.junction temperature.(**)Losses Include Also the Tail

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit g fs Forward Transconductance V CE =15V ,I C =10A

18S C ies Input Capacitance V CE =25V,f =1MHz,V GE =0

1300pF C oes Output Capacitance 105pF C res Reverse Transfer Capacitance 12pF Q g

Gate Charge

V CE =328V,I C =10A,V GE =5V

28

nC

Symbol

Parameter

Test Conditions

Min.

Typ.Max.

Unit II Latching Current V Clamp =328V,T C =125°C R GOFF =1K ?,V GE =5V 40

A U.I.S.

Functional Test Open Secondary Coil

R GOFF =1K ?,L =1mH ,Tc=125°C

13A

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t d(on)Turn-on Delay Time V CC =328V,I C =10A R G =1K ?,V GE =5V 1300ns t r Rise Time

270ns (di/dt)on Turn-on Current Slope V CC =328V,I C =10A R G =1K ?,V GE =5V

60A/μs Eon

Turn-on Switching Losses

V CC =328V,I C =10A,T C =25°C R G =1K ?,V GE =5V,T C =125°C

2.42.6

mJ mJ

Symbol

Parameter

Test Conditions

Min.

Typ.Max.

Unit t c Cross-over Time V cc =328V,I C =10A,R GE =1K ?,V GE =5V

3.6μs t r (V off )Off Voltage Rise Time 2μs t d (off )Delay Time 8μs t f Fall Time

1.4μs E off (**)Turn-off Switching Loss 5mJ t c Cross-over Time V cc =328V,I C =10A,R GE =1K ?,V GE =5V Tj =125°C

5.7μs t r (V off )Off Voltage Rise Time 2.7μs t d (off )Delay Time 9.2μs t f Fall Time

2.8μs E off (**)

Turn-off Switching Loss

8.7

mJ

STGB10NB40LZ

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5/10

STGB10NB40LZ

Gate Threshold vs Temperature

STGB10NB40LZ

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Total Switching Losses vs Collector Current

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STGB10NB40LZ

Fig.4:Gate Charge test Circuit

Fig.3:Test Circuit For Inductive Load Switching And Diode Recovery Times

Fig.2:Unclamped Inductive Waveform

Fig.1:Unclamped Inductive Load Test

Circuit

STGB10NB40LZ

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1

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STGB10NB40LZ

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE

SHIPMENT (no suffix)*

D 2PAK FOOTPRINT

*on sales type

DIM.mm inch MIN.

MAX.MIN.

MAX.A 330

12.992

B 1.50.059

C 12.813.20.5040.520

D 20.20795G 24.426.40.960 1.039N 100

3.937

T

30.4 1.197

BASE QTY BULK QTY 1000

1000REEL MECHANICAL DATA

DIM.mm inch MIN.MAX.MIN.

MAX.

A010.510.70.4130.421B015.715.90.6180.626D 1.5 1.60.0590.063D1 1.59 1.610.0620.063E 1.65 1.850.0650.073F 11.411.60.4490.456K0 4.8 5.00.1890.197P0 3.9 4.10.1530.161P111.912.10.4680.476P2 1.9 2.1

0.0750.082R 50 1.574

T 0.250.350.00980.0137

W

23.7

24.30.9330.956

TAPE MECHANICAL DATA

STGB10NB40LZ

10/10Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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