BU806FI中文资料

BU806/BU806FI

BU807

MEDIUM VOLTAGE NPN FAST SWITCHING

DARLINGTON TRANSISTOR

s SGS-THOMSON PREFERRED SALESTYPES s NPN DARLINGTON

s LOW BASE-DRIVE REQUIREMENTS s

INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

APPLICATION s HORIZONTAL DEFLECTION FOR MONOCHROME TVs

DESCRIPTION

The BU806,BU807and BU806FI are silicon epitaxial planar NPN power transistors in Darlington configuration with integrated base-emitter speed-up diode,mounted respectively in TO-220plastic package and ISOWATT220fully isolated package.

They can be used in horizontal output stages of 110o CRT video displays.

INTERNAL SCHEMATIC DIAGRAM

June 1997

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter

Value

Unit BU806/BU806FI BU807

V CBO Collector-base Voltage (I E =0)

400330V V CEV Collector-emitter Voltage (V BE =-6V)400330V V CEO Collector-emitter Voltage (I B =0)200150

V V EBO Emitter-Base Voltage (I C =0)6V I C Collector Current

8A I CM Collector Peak Current

15A I DM Damper Diode Peak Forward Current 10A I B Base Current

2

TO-220ISOWATT220A P t ot Total Power Dissipation at T case <25o

C 6030

W T stg Storage Temperature

-65to 150

o C T j Max Operating Junction Temperature

150

o C 12

3

TO-220ISOWATT220

1

2

3

1/5

THERMAL DATA

TO220ISOWATT220

R t hj-ca se R t hj-amb Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

2.08 4.16o C/W

o C/W

70

ELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)

Symbol Parameter Test Conditions Min.Typ.Max.Unit

I CES Collector Cut-off

Current(V BE=0)for BU807V CE=330V

for BU806/FI V CE=400V

100

100

μA

μA

I CEV Collector Cut-off

Current(V BE=-6V)for BU807V CE=330V

for BU806/FI V CE=400V

100

100

μA

μA

I EBO Emitter Cut-off

Current(I C=0)

V EB=6V 3.5mA

V CEO(sus)?Collector-Emitter

Sustaining Voltage I C=100mA for BU807

for BU806/FI

150

200

V

V

V CE(sat)?Collector-Emitter

Saturation Voltage

I C=5A I B=50mA 1.5V

V BE(s at)?Base-Emitter

Saturation Voltage

I C=5A I B=50mA 2.4V

V F?Damper Diode

Forward Voltage

I F=4A2V

t off??Turn-off Time RESISTIVE LOAD

I C=5A I B1=50mA

I B2=-500mA V CC=100V 0.41μs

t on??Turn-on Time0.35μs t s??Storage Time0.55μs t f Fall Time0.2μs ? Pulsed:Pulse duration=300μs,duty cycle<1.5%

? See Test Circuit.

BU806/BU806FI/BU807

2/5

DIM.mm

inch MIN.TYP.

MAX.MIN.TYP.

MAX.A 4.40 4.600.1730.181C 1.23 1.320.0480.051D 2.40

2.72

0.094

0.107

D1 1.27

0.050

E 0.490.700.0190.027

F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067

G 4.95 5.150.1940.203G1 2.4 2.70.0940.106H210.0

10.40

0.393

0.409

L216.4

0.645

L413.014.00.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.2 6.60.2440.260L9 3.5 3.930.1370.154DIA.

3.75 3.85

0.147

0.151

L6

A

C

D

E

D 1

F

G

L7

L2

Dia.

F 1

L5

L4

H 2

L9

F 2

G 1

TO-220MECHANICAL DATA

P011C

BU806/806FI /BU807

3/5

DIM.

mm inch MIN.

TYP.

MAX.MIN.TYP.

MAX.A 4.4 4.60.1730.181B 2.5 2.70.0980.106D 2.5 2.750.0980.108E 0.40.70.0150.027F 0.7510.0300.039F1 1.15 1.70.0450.067F2 1.15 1.70.0450.067G 4.95 5.20.1950.204G1 2.4 2.70.0940.106H 10

10.4

0.393

0.409

L216

0.630

L328.630.6 1.126 1.204L49.810.60.3850.417L615.916.40.6260.645L799.30.3540.366?

3 3.2

0.118

0.126

L2

A

B

D

E

H

G

L6

ˉ

F

L3

G 1

123

F 2

F 1

L7

L4

ISOWATT220MECHANICAL DATA

P011G

BU806/BU806FI /BU807

4/5

BU806/806FI/BU807 Information furnished is believed to be accurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may results from its use.No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specifications mentioned

in this publication are subject to change without notice.This publicationsupersedes and replaces all information previously supplied.

SGS-THOMSON Microelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.

?1997SGS-THOMSON Microelectronics-Printed in Italy-All Rights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia-Brazil-Canada-China-France-Germany-Hong Kong-Italy-Japan-Korea-Malaysia-Malta-Morocco-The Netherlands-Singapore-Spain-Sweden-Switzerland-Taiwan-Thailand-United Kingdom-U.S.A

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