IRFR2405中文资料

IRFR2405IRFU2405

HEXFET ? Power MOSFET

Seventh Generation HEXFET ? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount

applications.

Parameter

Max.

Units

I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 56 I D @ T

C

= 100°C Continuous Drain Current, V GS @ 10V 40 A I DM

Pulsed Drain Current 220P D @T C = 25°C Power Dissipation 110W Linear Derating Factor 0.71W/°C V GS Gate-to-Source Voltage

± 20V E AS Single Pulse Avalanche Energy 130mJ I AR Avalanche Current

34A E AR Repetitive Avalanche Energy 11mJ dv/dt Peak Diode Recovery dv/dt 5.0

V/ns T J Operating Junction and

-55 to + 175T STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

Description

3/1/00

https://www.wendangku.net/doc/db11123938.html, 1

l

Surface Mount (IRFR2405)l Straight Lead (IRFU2405)

l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching

l Fully Avalanche Rated PD - 93861

D-Pak I-Pak IRFR2405 IRFU2405

Parameter

Typ.

Max.

Units

R θJC Junction-to-Case

––– 1.4R θJA Junction-to-Ambient (PCB mount)*–––50°C/W

R θJA

Junction-to-Ambient

–––

110

Thermal Resistance

* When mounted on 1" square PCB (FR-4 or G-10 Material) .

For recommended footprint and soldering techniques refer to application note #AN-994