BAT54A-AE3-R中文资料

UNISONIC TECHNOLOGIES CO., LTD

BAT54x DIODE

SCHOTTKY BARRIER (DUAL) DIODES

DESCRIPTION

Planar Schottky barrier diodes encapsulated in the SOT-23 and SOT-323 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.

FEATURES

* Low forward voltage * Guard ring protected

* Small plastic SMD package

*Pb-free plating product number: BAT54xL

ORDERING INFORMATION

Order Number Pin Assignment

Normal Lead Free Plating Package 1 2 3

Packing

BAT54-AE3-R BAT54L-AE3-R SOT-23 x A K Tape Reel BAT54A-AE3-R BAT54AL-AE3-R SOT-23 K1 K2 A2A1Tape Reel BAT54C-AE3-R BAT54CL-AE3-R SOT-23 A1 A2 K2K1Tape Reel BAT54S-AE3-R BAT54SL-AE3-R SOT-23 K1 A2 K2A1Tape Reel BAT54-AL3-R BAT54L-AL3-R SOT-323x A K Tape Reel BAT54A-AL3-R BAT54AL-AL3-R SOT-323K1 K2 A2A1Tape Reel BAT54C-AL3-R BAT54CL-AL3-R SOT-323A1 A2 K2K1Tape Reel BAT54S-AL3-R BAT54SL-AL3-R SOT-323K1 A2 K2A1Tape Reel

DIODE CONFIGURATION AND SYMBOL

MARKING

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL

RATINGS UNIT

Per diode

Continuous Reverse Voltage V R 30 V Continuous Forward Current I F 200 mA Repetitive Peak Forward Current (t p < 1s, δ ≤ 0.5) I FRM 300 mA Non-repetitive Peak Forward Current (t p < 10ms) I FSM 600 mA Junction Temperature T J +125 Storage Temperature T STG -60 ~ +150 Per device

Power Dissipation (T a ≤ 25 ) P D 230 mW Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER SYMBOL RATINGS UNIT

SOT-23 500 K/W

Thermal Resistance From Junction to Ambient

SOT-323

JA 625 K/W ELECTRICAL CHARACTERISTICS (T a = 25 , unless otherwise specified.)

PARAMETER SYMBOL

TEST CONDITIONS MIN TYP MAX UNIT

Forward Voltage (See Fig.1)

V F

I F = 0.1mA

I F = 1mA

I F = 10mA I F = 30mA

I F = 100mA

240320400500800mV mV mV mV mV Reverse Current (See Fig.2) I R V R = 25V 2 μA Reverse Recovery Time (see Fig.4) t rr When switched from I F =10mA to I R = 10mA, R L = 100? measured at I R = 1mA 5 ns Diode Capacitance (see Fig.3)

C d

f = 1 MHz, V R = 1V; 10pF

TYPICAL CHARACTERISTICS

10

1000.4

0.8V F (V)

I F (m A )

10

1.2

Fig.1 Forward current as a function of forward voltage ;

typical values.1010010

20V R (V)

I R ( A )

10

30

Fig.2 Reverse current as a function of reverse voltage;

typical values.

100

010

20V R (V)

C d (p F )

30

Fig.3 Diode capacitance as a function of reverse voltage;

typical values.I I Fig.4 Reverse recovery definitions