文档库 最新最全的文档下载
当前位置:文档库 › bq3055

bq3055

bq3055
bq3055

bq3055

https://www.wendangku.net/doc/d914947188.html, ZHCS692A–OCTOBER2010–REVISED JANUARY2012 2节、3节和4节串联的锂离子电池组管理器

查询样品:bq3055

特性应用范围

?完全集成的2节、3节和4节串联的锂离子或者锂?笔记本电脑/笔记本个人电脑聚合物电池组管理器和保护?医疗与测试设备

?高级补偿放电终点电压(CEDV)测量?便携式仪表

?高侧N通道(N-CH)保护场效应晶体管(FET)驱动

说明

?集成的电池均衡管理

此bp3055器件是一个全集成的、单芯片、基于组的解?低功率模式

决方案,此方案为电池电量侦测、保护、和对2节、3–低功率:<180μA

节、和4节串联锂离子和锂聚合物电池组的认证提供了–睡眠模式<76μA

一个丰富的特性阵列。

?可编程保护特性的完全阵列

–电压通过使用其集成的高性能模拟外设,bq3055器件测量–电流并保存锂离子或者锂聚合物电池的可用容量、电压、电–温度流、温度、和其它关键参数,并通过SMBus v1.1兼容?精密的充电算法接口将这些信息报告给系统主机控制器。

–日本电子资讯技术产业协会(JEITA)

bq3055在过压、欠压、过热、和过度充电情况下提供–增强型充电

基于软件的第一级和第二级安全保护,以及对放电过–自适应充电

流,充放电短路情况下基于硬件的保护。

?支持2线制系统管理总线(SMBus)v1.1接口

具有用于认证码存储的安全内存的SHA-1认证能够毫?安全散列算法(SHA-1)认证

无疑问地识别真正的电池组。

?紧凑封装:30引线薄型小尺寸封装(TSSOP)

这个紧凑的30引线TSSOP封装在大大减少了成本和

智能电池的尺寸的同时最大限度地提供了功能性和电池

测量应用的安全。

Please be aware that an important notice concerning availability,standard warranty,and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

bq3055

ZHCS692A–OCTOBER2010–REVISED https://www.wendangku.net/doc/d914947188.html,

These devices have limited built-in ESD protection.The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

ORDERING INFORMATION

PACKAGE PACKAGE ORDERING INFORMATION(1) PART DESIGNATOR MARKING

T A PACKAGE TUBE(2)TAPE AND NUMBER

REEL(3)

–40°C to85°C bq3055TSSOP-30DBT bq3055bq3055DBT bq3055DBTR (1)For the most current package and ordering information,see the Package Option Addendum at the end of the document,or see the TI

website at https://www.wendangku.net/doc/d914947188.html,.

(2)A single tube quantity is50units.

(3)A single reel quantity is2000units.

THERMAL INFORMATION

bq3055

THERMAL METRIC(1)TSSOP UNITS

30PINS

θJA,High K Junction-to-ambient thermal resistance(2)73.1

θJC(top)Junction-to-case(top)thermal resistance(3)17.5

θJB Junction-to-board thermal resistance(4)34.5

°C/W ψJT Junction-to-top characterization parameter(5)0.3

ψJB Junction-to-board characterization parameter(6)30.3

θJC(bottom)Junction-to-case(bottom)thermal resistance(7)n/a

(1)有关传统和新的热度量的更多信息,请参阅IC封装热度量应用报告SPRA953。

(2)在JESD51-2a描述的环境中,按照JESD51-7的指定在一个JEDEC标准high-K测试电路板上进行仿真,从而获得自然对流条件下的结

到外部热阻。

(3)通过在封装顶部进行冷板测试仿真来获得结到芯片外壳(顶部)热阻。不存在特定的JEDEC标准测试,但可在ANSI SEMI标准G30-88

中找到内容接近的说明。

(4)按照JESD51-8中的说明,通过在配有用于控制PCB温度的环形冷板夹具的环境中进行仿真,以获得结到电路板热阻。

(5)结到顶部的表征参数(ψJT)估算真实系统中器件的结温,并使用JESD51-2a(第6章和第7章)中描述的程序从从从得到θJA的仿真数据中

提取出该参数。

(6)结到电路板的表征参数(ψJB)估算真实系统中器件的结温,并使用JESD51-2a(第6章和第7章)中描述的程序从从得到θJA的仿真数据

中提取出该参数。

(7)通过在裸(电源)焊盘上进行冷板测试仿真来获得结到芯片外壳(底部)热阻。不存在特定的JEDEC标准测试,但在ANSI SEMI标准

G30-88中找到了内容接近的说明。

PACK-

PRES SMBC SMBD 0.22μF bq3055

https://www.wendangku.net/doc/d914947188.html, ZHCS692A –OCTOBER 2010–REVISED JANUARY 2012

TYPICAL IMPLEMENTATION

Figure 1.bq3055Implementation

CHG

bq3055

DSG PACK BAT

VC1

PCHG VCC VC2

VC3

FUSE VC4

VSS

TEST REG33TS1

VSS SRP

REG25RBI SRN

NC NC TS2

NC NC NC

PRES

ˉˉˉˉˉNC

SMBD SMBC bq3055

ZHCS692A –OCTOBER 2010–REVISED JANUARY https://www.wendangku.net/doc/d914947188.html,

Pin-Out Diagram

Figure 2.bq3055Pin-Out Diagram

PIN FUNCTIONS

PIN NAME

PIN NUMBER TYPE (1)DESCRIPTION bq3055-DBT CHG

1O Charge N-FET gate drive BAT

2P Alternate power source VC1

3I Sense input for positive voltage of top most cell in stack and cell balancing input for top most cell in stack VC2

4I Sense input for positive voltage of third lowest cell in stack and cell balancing input for third lowest cell in stack VC3

5I Sense input for positive voltage of second lowest cell in stack and cell balancing input for second lowest cell in stack VC4

6I Sense input for positive voltage of lowest cell in stack and cell balancing input for lowest cell in stack VSS

7P Device ground TS1

8AI Temperature sensor 1thermistor input SRP

9AI Differential Coulomb Counter input SRN

10AI Differential Coulomb Counter input TS2

11AI Temperature sensor 2thermistor input PRES

12I Host system present input SMBD

13I/OD SMBus v1.1data line NC

14—Not internally connected,connect to VSS SMBC

15I/OD SMBus v1.1clock line NC

16—Not internally connected,connect to VSS NC

17—Not internally connected,connect to VSS NC

18—Not internally connected,connect to VSS NC

19—Not internally connected,connect to VSS NC

20—Not internally connected,connect to VSS RBI

21P RAM backup (1)

P =Power Connection,O =Digital Output,AI =Analog Input,I =Digital Input,I/OD =Digital Input/Output

bq3055 https://www.wendangku.net/doc/d914947188.html, ZHCS692A–OCTOBER2010–REVISED JANUARY2012

PIN FUNCTIONS(continued)

PIN NAME PIN NUMBER TYPE(1)DESCRIPTION

bq3055-DBT

REG2522P 2.5-V regulator output

VSS23P Device ground

REG3324P 3.3-V regulator output

TEST25—Test pin,connect to VSS through2-kΩresistor

FUSE26O Fuse drive

VCC27P Power supply voltage

PCHG28I/OD Pre-charge P-FET gate drive

PACK29P Alternate power source

DSG30O Discharge N-FET gate drive

ABSOLUTE MAXIMUM RATINGS

Over operating free-air temperature range(unless otherwise noted)(1)

DESCRIPTION PINS VALUE

Supply voltage range,V MAX VCC,TEST,PACK w.r.t.Vss–0.3V to34V

Input voltage range,V IN VC1,BAT V VC2–0.3V to V VC2+8.5V or34V,

whichever is lower

VC2V VC3–0.3V to V VC3+8.5V

VC3V VC4–0.3V to V VC4+8.5V

VC4V SRP–0.3V to V SRP+8.5V

SRP,SRN–0.3V to0.3V

SMBC,SMBD V SS–0.3V to6.0V

TS1,TS2,PRES–0.3V to V REG25+0.3V

Output voltage range,V O DSG–0.3V to V PACK+20V or V SS+34V,

whichever is lower

CHG–0.3V to V BAT+20V or V SS+34V,

whichever is lower

FUSE–0.3V to34V

RBI,REG25–0.3V to2.75V

REG33–0.3V to5.0V

Maximum VSS current,I SS50mA

Current for cell balancing,I CB10mA

ESD Rating HBM,VCx Only1kV

Functional Temperature,T FUNC–40to110°C

Storage temperature range,T STG–65to150°C

Lead temperature(soldering,10s),T SOLDER300°C

(1)Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device.These are stress ratings

only,and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied.Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

MIN TYP MAX UNIT Supply voltage VCC,PACK25V

BAT 3.8V VC2+5.0

V STARTUP Start up voltage at PACK 3.0 5.5V

bq3055

ZHCS692A–OCTOBER2010–REVISED https://www.wendangku.net/doc/d914947188.html,

RECOMMENDED OPERATING CONDITIONS(continued)

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

MIN TYP MAX UNIT

V IN Input voltage VC1,BAT V VC2V VC2+5.0V range VC2V

V VC3+5.0

VC3

VC3V VC4V VC4+5.0

VC4V SRP V SRP+5.0

VCn–VC(n+1),(n=1,2,3,4)0 5.0

PACK25

SRP to SRN–0.20.2V

C REG33External3.3V1μF

REG capacitor

C REG25External2.5V1μF

REG capacitor

T OPR Operating–4085°C temperature

ELECTRICAL CHARACTERISTICS:Supply Current

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

I CC Normal CHG on,DSG on,no Flash write410μA

Sleep CHG on,DSG on,no SBS160μA

communication

CHG off,DSG off,no SBS80μA

communication

Shutdown1μA ELECTRICAL CHARACTERISTICS:Power On Reset(POR)

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V IT–Negative-going voltage input At REG25 1.9 2.0 2.1V

V HYS POR Hysteresis At REG2565125165mV ELECTRICAL CHARACTERISTICS:WAKE FROM SLEEP

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V WAKE=1.2mV0.2 1.2 2.0mV

V WAKE=2.4mV0.4 2.4 3.6

V WAKE V WAKE Threshold

V WAKE=5mV 2.0 5.0 6.8

V WAKE=10mV 5.31013

Temperature drift of VWAKE

V WAKE_TCO0.5%/°C accuracy

Time from application of current and

t WAKE0.21ms wake of bq3055

bq3055 https://www.wendangku.net/doc/d914947188.html, ZHCS692A–OCTOBER2010–REVISED JANUARY2012

ELECTRICAL CHARACTERISTICS:RBI RAM Backup

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

VRBI>V(RBI)MIN,VCC

I(RBI)RBI data-retention input current VRBI>V

(RBI)MIN ,VCC

500

T A=0°C to70°C

V(RBI)RBI data-retention voltage1V

ELECTRICAL CHARACTERISTICS:3.3V Regulator

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

3.8V

2.4

3.5V

I CC≤4mA

5V

V REG33Regulator output voltage 3.1 3.3 3.5V

I CC≤13mA

6.8V

3.1 3.3 3.5V

I CC≤30mA

I REG33Regulator output current2mA

Regulator output change with

ΔV(VDDTEMP)VCC or BAT=14.4V,I REG33=2mA0.2% temperature

ΔV(VDDLINE)Line regulation VCC or BAT=14.4V,I REG33=2mA113mV

ΔV(VDDLOAD)Load regulation VCC or BAT=14.4V,I REG33=2mA518mV

VCC or BAT=14.4V,V REG33=3V70

I(REG33MAX)Current limit mA

VCC or BAT=14.4V,V REG33=0V33 ELECTRICAL CHARACTERISTICS:2.5V Regulator

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V REG25Regulator output voltage I REG25=10mA 2.35 2.5 2.55V

I REG25Regulator Output Current3mA

Regulator output change with

ΔV(VDDTEMP)VCC or BAT=14.4V,I REG25=2mA0.25% temperature

ΔV(VDDLINE)Line regulation VCC or BAT=14.4V,I REG25=2mA14mV

ΔV(VDDLOAD)Load regulation VCC or BAT=14.4V,I REG25=2mA2040mV

VCC or BAT=14.4V,V REG25=2.3V65

I(REG33MAX)Current limit mA

VCC or BAT=14.4V,V REG25=0V23 ELECTRICAL CHARACTERISTICS:PRES,SMBD,SMBC

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V IH High-level input PRES,SMBD,SMBC 2.0V

V IL Low-level input PRES,SMBD,SMBC0.8V

V OL Low-level output voltage SMBD,SMBC0.4V

C IN Input capacitance PRES,SMBD,SMBC5pF

I LKG Input leakage current PRES,SMBD,SMBC1μA

I WPU Weak Pull Up Current PRES,V OH=V REG25–0.5V60120μA

R PD(SMBx)SMBC,SMBD Pull-Down T A=–40to100?C5507751000kΩ

bq3055

ZHCS692A–OCTOBER2010–REVISED https://www.wendangku.net/doc/d914947188.html,

ELECTRICAL CHARACTERISTICS:CHG,DSG FET Drive

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V O(FETONDSG)=V(DSG)–V PACK,V GS

8.09.712V

connect10M?,VCC3.8V to8.4V

V O(FETONDSG)=V(DSG)–V PACK,V GS

9.01112V

connect10M?,VCC>8.4V

Output voltage,charge,and

V(FETON)

discharge FETs on V

O(FETONCHG)=V(CHG)–V BAT,V GS

8.09.712V

connect10M?,VCC3.8V to8.4V

V O(FETONCHG)=V(CHG)–V BAT,V GS

9.01112V

connect10M?,VCC>8.4V

VO(FETOFFDSG)=V(DSG)–V PACK–0.40.4V Output voltage,charge and

V(FETOFF)

discharge FETs off V

O(FETOFFCHG)

=V(CHG)–V BAT–0.40.4V

C L=4700pF

R G=5.1kΩ

VCC<8.48001400μs

V DSG:V BAT to V BAT+4V

V CHG:V PACK to V PACK+4V

t r Rise time

C L=4700pF

R G=5.1kΩ

VCC>8.4200500μs

V DSG:V BAT to V BAT+4V

V CHG:V PACK to V PACK+4V

C L=4700pF

R G=5.1kΩ

V DSG:V BAT+V O(FETONDSG)to V BAT

t f Fall time80200μs

+1V

V CHG:V PACK+V O(FETONCHG)to

V PACK+1V

ELECTRICAL CHARACTERISTICS:PCHG FET Drive

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V PU_PCHG PCHG Pull-Up Voltage V CC V

V OL_PCHG PCHG Output Voltage Low I OL=1mA0.3V ELECTRICAL CHARACTERISTICS:FUSE

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

VCC=3.8V to9V 2.48.5V

V OH(FUSE)High Level FUSE Output

VCC=9V to25V789V

2.8V

V IH(FUSE)Weak pull-up current in off state(1)

100nA

C L=1nF,VCC=9V to25V,

t R(FUSE)FUSE Output Rise Time520μs

V OH(FUSE)=0V to5V

Z O(FUSE)FUSE Output Impedance25k?(1)Verified by design.Not production tested.

bq3055 https://www.wendangku.net/doc/d914947188.html, ZHCS692A–OCTOBER2010–REVISED JANUARY2012

ELECTRICAL CHARACTERISTICS:COULOMB COUNTER

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V IN Input voltage range SRP–SRN–0.200.25V Conversion time Single conversion250ms

Resolution(no missing codes)16Bits

Effective resolution Single conversion,signed15Bits

Offset error Post calibrated10μV

Offset error drift0.30.5μV/°C

Full-scale error–0.8%0.2%0.8%

Full-scale error drift150PPM/°C

Effective input resistance 2.5mΩ

ELECTRICAL CHARACTERISTICS:VC1,VC2,VC3,VC4

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

VC4–VC3,VC3–VC2,VC2–

Input voltage range–0.208V

VC1,VC1–VSS

Conversion time Single conversion32ms

V IN

Resolution(no missing codes)16Bits

Effective resolution Single conversion,signed15Bits

R DS(ON)for internal FET at V DS>V DS=VC4–VC3,VC3–VC2,

200310430Ω2V VC2–VC1,VC1–VSS

R(BAL)

R DS(ON)for internal FET at V DS>V DS=VC4–VC3,VC3–VC2,

60125230Ω4V VC2–VC1,VC1–VSS

ELECTRICAL CHARACTERISTICS:TS1,TS2

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

R Internal Pull Up Resistor16.517.519.0K?

Internal Pull Up Resistor Drift From

R DRIFT200PPM/°C 25°C

R PAD Internal Pin Pad resistance84?

0.8×

Input voltage range TS1–VSS,TS2–VSS–0.20V

V REG25 Conversion Time16ms

V IN

Resolution(no missing codes)16Bits

Effective resolution1112Bits ELECTRICAL CHARACTERISTICS:Internal Temperature Sensor

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Temperature sensor voltage–1.9–2.0–2.1mV/°C

Conversion Time16ms

V(TEMP)

Resolution(no missing codes)16Bits

Effective resolution1112Bits

bq3055

ZHCS692A–OCTOBER2010–REVISED https://www.wendangku.net/doc/d914947188.html,

ELECTRICAL CHARACTERISTICS:Internal Thermal Shutdown

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

T MAX2Maximum REG33temperature125175

T RECOVER Recovery hysteresis temperature10°C

t PROTECT Protection time5μs

ELECTRICAL CHARACTERISTICS:High Frequency Oscillator

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

f(OSC)Operating frequency of CPU Clock 4.194MHz

T A=–20°C to70°C–2%±0.25%2%

f(EIO)Frequency error(1)(2)

T A=–40°C to85°C–3%±0.25%3%

t(SXO)Start-up time(3)T A=–25°C to85°C36ms

(1)The frequency error is measured from4.194MHz.

(2)The frequency drift is included and measured from the trimmed frequency at V REG25=2.5V,T A=25°C.

(3)The startup time is defined as the time it takes for the oscillator output frequency to be±3%when the device is already powered. ELECTRICAL CHARACTERISTICS:Low Frequency Oscillator

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

f(LOSC)Operating frequency32.768kHz

T A=–20°C to70°C–1.5%±0.25% 1.5%

f(LEIO)Frequency error(1)(2)

T A=–40°C to85°C–2.5%±0.25% 2.5%

t(LSXO)Start-up time(3)T A=–25°C to85°C100μs

(1)The frequency drift is included and measured from the trimmed frequency at VCC=2.5V,T A=25°C.

(2)The frequency error is measured from32.768kHz.

(3)The startup time is defined as the time it takes for the oscillator output frequency to be±3%.

ELECTRICAL CHARACTERISTICS:Internal Voltage Reference

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V REF Internal Reference Voltage 1.215 1.225 1.230V

T A=–25°C to85°C±80PPM/°C

V REF_DRIFT Internal Reference Voltage Drift

T A=0°C to60°C±50PPM/°C ELECTRICAL CHARACTERISTICS:Flash

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER(1)TEST CONDITIONS MIN TYP MAX UNIT

Data retention10Years

Data Flash20k Cycles Flash programming write-cycles

Instruction Flash1k Cycles

I CC(PROG_DF)Data Flash-write supply current T A=–40°C to85°C34mA

I CC(ERASE_DF)Data Flash-erase supply current T A=–40°C to85°C318mA

(1)Verified by design.Not production tested.

bq3055 https://www.wendangku.net/doc/d914947188.html, ZHCS692A–OCTOBER2010–REVISED JANUARY2012

ELECTRICAL CHARACTERISTICS:OCD Current Protection

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

RSNS=050200mV OCD detection threshold voltage

V(OCD)

range,typical RSNS=125100mV

RSNS=010mV OCD detection threshold voltage

ΔV(OCDT)

program step RSNS=15mV

V(OFFSET)OCD offset–1010mV

V(Scale_Err)OCD scale error–1010%

t(OCDD)Over Current in Discharge Delay131ms

t(OCDD_STEP)OCDD Step options2ms

t(DETECT)Current fault detect time VSRP–SRN=VTHRESH+12.5mV160μs

Over Current and Short Circuit

t ACC Accuracy of typical delay time–2020% delay time accuracy

ELECTRICAL CHARACTERISTICS:SCD1Current Protection

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

RSNS=0100450mV SCD1detection threshold

V(SDC1)

voltage range,typical RSNS=150225mV

RSNS=050mV SCD1detection threshold

ΔV(SCD1T)

voltage program step RSNS=125mV

V(OFFSET)SCD1offset–1010mV

V(Scale_Err)SCD1scale error–1010%

AFE.STATE_CNTL[SCDDx2]=00915μs

t(SCD1D)Short Circuit in Discharge Delay

AFE.STATE_CNTL[SCDDx2]=101830μs

AFE.STATE_CNTL[SCDDx2]=061μs

t(SCD1D_STEP)SCD1D Step options

AFE.STATE_CNTL[SCDDx2]=1122μs

t(DETECT)Current fault detect time VSRP–SRN=VTHRESH+12.5mV160μs

Over Current and Short Circuit

t ACC Accuracy of typical delay time–2020% delay time accuracy

ELECTRICAL CHARACTERISTICS:SCD2Current Protection

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

RSNS=0100450mV SCD2detection threshold

V(SDC2)

voltage range,typical RSNS=150225mV

RSNS=050mV SCD2detection threshold

ΔV(SCD2T)

voltage program step RSNS=125mV

V(OFFSET)SCD2offset–1010mV

V(Scale_Err)SCD2scale error–1010%

AFE.STATE_CNTL[SCDDx2]=00458μs

t(SCD1D)Short Circuit in Discharge Delay

AFE.STATE_CNTL[SCDDx2]=10915μs

AFE.STATE_CNTL[SCDDx2]=030.5μs

t(SCD2D_STEP)SCD2D Step options

AFE.STATE_CNTL[SCDDx2]=161μs

t(DETECT)Current fault detect time VSRP–SRN=VTHRESH+12.5mV160μs

Over Current and Short Circuit

t ACC Accuracy of typical delay time–2020% delay time accuracy

bq3055

ZHCS692A–OCTOBER2010–REVISED https://www.wendangku.net/doc/d914947188.html,

ELECTRICAL CHARACTERISTICS:SCC Current Protection

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

RSNS=0–100–300mV SCC detection threshold voltage

V(SCCT)

range,typical RSNS=1–50–225mV

RSNS=0–50mV SCC detection threshold voltage

ΔV(SCCDT)

program step RSNS=1–25mV

V(OFFSET)SCC offset–1010mV

V(Scale_Err)SCC scale error–1010%

t(SCCD)Short Circuit in Charge Delay0915ms

t(SCCD_STEP)SCCD Step options61ms

t(DETECT)Current fault detect time VSRP–SRN=VTHRESH+12.5mV160μs

Over Current and Short Circuit

t ACC Accuracy of typical delay time–2020% delay time accuracy

ELECTRICAL CHARACTERISTICS:SBS Timing Characteristics

Typical values stated where TA=25oC and VCC=14.4V,Min/Max values stated where T A=–40oC to85oC and VCC=3.8V to25V(unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

f SMB SMBus operatin

g frequency Slave mode,SMBC50%duty cycle10100kHz

Master mode,no clock low slave

f MAS SMBus master clock frequency51.2kHz

extend

Bus free time between start and

t BUF 4.7μs stop

t HD:STA Hold time after(repeated)start 4.0μs

t SU:STA Repeated start setup time 4.7μs

t SU:STO Stop setup time 4.0μs

t HD:DAT Data hold time300ns

t SU:DAT Data setup time250ns

t TIMEOUT Error signal/detect See(1)2535ms

t LOW Clock low period 4.7μs

t HIGH Clock high period See(2)Disabled

t HIGH Clock high period See(2) 4.050μs

Cumulative clock low slave

t LOW:SEXT See(3)25ms extend time

Cumulative clock low master

t LOW:MEXT See(4)10ms extend time

t F Clock/data fall time See(5)300ns

t R Clock/data rise time See(6)1000ns

(1)The bq3055times out when any clock low exceeds t TIMEOUT.

(2)t HIGH,Max,is the minimum bus idle time.SMBC=1for t>50μs causes reset of any transaction involving bq3055that is in progress.

This specification is valid when the THIGH_VAL=0.If THIGH_VAL=1,then the value of THIGH is set by THIGH_1,2and the timeout is not SMBus standard.

(3)t LOW:SEXT is the cumulative time a slave device is allowed to extend the clock cycles in one message from initial start to the stop.

(4)t LOW:MEXT is the cumulative time a master device is allowed to extend the clock cycles in one message from initial start to the stop.

(5)Rise time tR=V ILMAX–0.15)to(V IHMIN+0.15)

(6)Fall time tF=0.9V DD to(V ILMAX–0.15)

bq3055 https://www.wendangku.net/doc/d914947188.html, ZHCS692A–OCTOBER2010–REVISED JANUARY2012

Figure3.SMBus Timing Diagram

bq3055

ZHCS692A–OCTOBER2010–REVISED https://www.wendangku.net/doc/d914947188.html,

FEATURE SET

Primary(1st Level)Safety Features

The bq3055supports a wide range of battery and system protection features that can easily be configured.The primary safety features include:

?Cell Overvoltage/Undervoltage Protection

?Charge and Discharge Overcurrent

?Short-Circuit

?Charge and Discharge Over-Temperature

?AFE Watchdog

Secondary(2nd Level)Safety Features

The secondary safety features of the bq3055can be used to indicate more serious faults via the FUSE pin.This pin can be used to blow an in-line fuse to permanently disable the battery pack from charging or discharging.The secondary safety protection features include:

?Safety Overvoltage

?Safety Overcurrent in Charge and Discharge

?Safety Over-Temperature in Charge and Discharge

?Charge FET,Discharge FET,and Pre-Charge FET Faults

?Cell Imbalance Detection

?Fuse Blow by Secondary Voltage Protection IC

?AFE Register Integrity Fault(AFE_P)

?AFE Communication Fault(AFE_C)

Charge Control Features

The bq3055charge control features include:

?Supports JEITA temperature ranges.Reports charging voltage and charging current according to the active temperature range

?Handles more complex charging profiles.Allows for splitting the standard temperature range into two sub-ranges and allows for varying the charging current according to the cell voltage

?Reports the appropriate charging current needed for constant current charging and the appropriate charging voltage needed for constant voltage charging to a smart charger using SMBus broadcasts

?Reduce the charge difference of the battery cells in fully charged state of the battery pack gradually using a voltage-based cell balancing algorithm during charging.A voltage threshold can be set up for cell balancing to be active.This prevents fully charged cells from overcharging and causing excessive degradation and also increases the usable pack energy by preventing premature charge termination.

?Supports pre-charging/zero-volt charging

?Supports charge inhibit and charge suspend if battery pack temperature is out of temperature range ?Reports charging fault and also indicate charge status via charge and discharge alarms

Gas Gauging

The bq3055uses the CEDV algorithm to measure and calculate the available capacity in battery cells.The bq3055accumulates a measure of charge and discharge currents and compensates the charge current measurement for the temperature and state-of-charge of the battery.The bq3055estimates self-discharge of the battery and also adjusts the self-discharge estimation based on temperature.See the bq3055Technical Reference Manual(SLUU440)for further details.

Lifetime Data Logging Features

The bq3055offers limited lifetime data logging for the following critical battery parameters:

?Lifetime Maximum Temperature

?Lifetime Minimum Temperature

bq3055 https://www.wendangku.net/doc/d914947188.html, ZHCS692A–OCTOBER2010–REVISED JANUARY2012

?Lifetime Maximum Battery Cell Voltage

?Lifetime Minimum Battery Cell Voltage

Authentication

?The bq3055supports authentication by the host using SHA-1.

?SHA-1authentication by the gas gauge is required for unsealing and full access.

Power Modes

The bq3055supports three power modes to reduce power consumption:

?In Normal Mode,the bq3055performs measurements,calculations,protection decisions,and data updates in

0.25-second intervals.Between these intervals,the bq3055is in a reduced power stage.

?In Sleep Mode,the bq3055performs measurements,calculations,protection decisions,and data updates in adjustable time intervals.Between these intervals,the bq3055is in a reduced power stage.The bq3055has

a wake function that enables exit from Sleep mode when current flow or failure is detected.

?In Shutdown Mode,the bq3055is completely disabled.

Configuration

Oscillator Function

The bq3055fully integrates the system oscillators and does not require any external components to support this feature.

System Present Operation

The bq3055checks the pin periodically(1s).If input is pulled to ground by the external system,the bq3055detects this as system present.

2-,3-,or4-Cell Configuration

In a2-cell configuration,VC1is shorted to VC2and VC3.In a3-cell configuration,VC1is shorted to VC2.

Cell Balancing

The device supports cell balancing by bypassing the current of each cell during charging or at rest.If the device's internal bypass is used,up to10mA can be bypassed and multiple cells can be bypassed at the same time. Higher cell balance current can be achieved by using an external cell balancing circuit.In external cell balancing mode,only one cell at a time can be balanced.

The cell balancing algorithm determines the amount of charge needed to be bypassed to balance the capacity of all cells.

Internal Cell Balancing

When internal cell balancing is configured,the cell balance current is defined by the external resistor R VC at the VCx input.

bq3055

ZHCS692A–OCTOBER2010–REVISED https://www.wendangku.net/doc/d914947188.html,

External Cell Balancing

When external cell balancing is configured,the cell balance current is defined by R B.Only one cell at a time can be balanced.

bq3055 https://www.wendangku.net/doc/d914947188.html, ZHCS692A–OCTOBER2010–REVISED JANUARY2012

BATTERY PARAMETER MEASUREMENTS

Charge and Discharge Counting

The bq3055uses an integrating delta-sigma analog-to-digital converter(ADC)for current measurement,and a second delta-sigma ADC for individual cell and battery voltage and temperature measurement.

The integrating delta-sigma ADC measures the charge/discharge flow of the battery by measuring the voltage drop across a small-value sense resistor between the SR1and SR2pins.The integrating ADC measures bipolar signals from–0.25V to0.25V.The bq3055detects charge activity when V SR=V(SRP)–V(SRN)is positive,and discharge activity when V SR=V(SRP)–V(SRN)is negative.The bq3055continuously integrates the signal over time,using an internal counter.The fundamental rate of the counter is0.65nVh.

Voltage

The bq3055updates the individual series cell voltages at0.25-second intervals.The internal ADC of the bq3055 measures the voltage,and scales and calibrates it appropriately.This data is also used to calculate the impedance of the cell for the CEDV gas-gauging.

Current

The bq3055uses the SRP and SRN inputs to measure and calculate the battery charge and discharge current using a5-mΩto20-mΩtyp.sense resistor.

Auto Calibration

The bq3055provides an auto-calibration feature to cancel the voltage offset error across SRN and SRP for maximum charge measurement accuracy.The bq3055performs auto-calibration when the SMBus lines stay low continuously for a minimum of5s.

Temperature

The bq3055has an internal temperature sensor and inputs for two external temperature sensors.All three temperature sensor options are individually enabled and configured for cell or FET temperature.Two configurable thermistor models are provided to allow the monitoring of cell temperature in addition to FET temperature,which may be of a higher temperature type.

Communications

The bq3055uses SMBus v1.1with Master Mode and packet error checking(PEC)options per the SBS specification.

SMBus On and Off State

The bq3055detects an SMBus off state when SMBC and SMBD are low for two or more seconds.Clearing this state requires that either SMBC or SMBD transition high.The communication bus will resume activity within1 ms.

SBS Commands

See the bq3055Technical Reference Manual(SLUU440)for further details.

bq3055

ZHCS692A–OCTOBER2010–REVISED https://www.wendangku.net/doc/d914947188.html,

APPLICATION SCHEMATIC

PACKAGE OPTION ADDENDUM

https://www.wendangku.net/doc/d914947188.html, 26-Mar-2012Addendum-Page 1

PACKAGING INFORMATION Orderable Device

Status (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)Samples (Requires Login)BQ3055DBT

ACTIVE TSSOP DBT 3060Green (RoHS & no Sb/Br)CU NIPDAU Level-2-260C-1 YEAR BQ3055DBTR

ACTIVE TSSOP DBT 302000Green (RoHS & no Sb/Br)Call TI Level-2-260C-1 YEAR (1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check https://www.wendangku.net/doc/d914947188.html,/productcontent for the latest availability information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

相关文档