当前位置：文档库 › VNP5N07中文资料

VNP5N07中文资料

VNP5N07

”OMNIFET”:

FULLY AUTOPROTECTED POWER MOSFET

April 19961

TO-220

BLOCK DIAGRAM

TYPE V clamp R DS(on)I l im VNP5N07

70V

0.2?

s LINEAR CURRENT LIMITATION s THERMAL SHUT DOWN

s SHORT CIRCUIT PROTECTION s INTEGRATED CLAMP

s LOW CURRENT DRAWN FROM INPUT PIN s

DIAGNOSTIC FEEDBACK THROUGH INPUT PIN

s ESD PROTECTION

DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)s

COMPATIBLE WITH STANDARD POWER MOSFET

STANDARD TO-220PACKAGE

DESCRIPTION

The VNP5N07is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0Technology,intended for replacement of standard power MOSFETS in DC to 50KHz applications.Built in thermal shut-down,linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Fault feedback can be detected by monitoring the voltage at the input pin.

1/11

ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Unit V DS Drain-source Voltage(V in=0)Internally Clamped V V in Input Voltage18V

I D Drain Current Internally Limited A

I R Reverse DC Output Current-7A

V esd Electrostatic Discharge(C=100pF,R=1.5K?)2000V P to t Total Dissipation at T c=25o C31W T j Operating Junction Temperature Internally Limited o C T c Case Operating Temperature Internally Limited o C T st g Storage Temperature-55to150o C

THERMAL DATA

R t hj-ca se R t hj-amb Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

62.5

o C/W

ELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)

OFF

Symbol Parameter Test Conditions Min.Typ.Max.Unit V CLAMP Drain-source Clamp

Voltage

I D=200mA V in=0607080V

V CLTH Drain-source Clamp

Threshold Voltage

I D=2mA V in=055V

V I NCL Input-Source Reverse

Clamp Voltage

I in=-1mA-1-0.3V

I DSS Zero Input Voltage

Drain Current(V in=0)V DS=13V V in=0

V DS=25V V in=0

200

μA

I I SS Supply Current from

Input Pin

V DS=0V V in=10V250500μA ON(?)

Symbol Parameter Test Conditions Min.Typ.Max.Unit V IS(th)Input Threshold

Voltage

V DS=V in I D+I in=1mA0.83V

R DS(on)Static Drain-source On

Resistance V i n=10V I D=2.5A

V i n=5V I D=2.5A

0.200

0.280

DYNAMIC

Symbol Parameter Test Conditions Min.Typ.Max.Unit

g fs(?)Forward

Transconductance

V DS=13V I D=2.5A34S

C oss Output Capacitance V DS=13V f=1MHz V in=0200300pF VNP5N07

2/11

ELECTRICAL CHARACTERISTICS(continued)

SWITCHING(??)

Symbol Parameter Test Conditions Min.Typ.Max.Unit

t d(on) t r t d(of f) t f Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

V DD=15V I d=2.5A

V gen=10V R gen=10?

(see figure3)

150

100

300

t d(on) t r t d(of f) t f Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

V DD=15V I d=2.5A

V gen=10V R gen=1000?

(see figure3)

150

400

3900

1100

250

600

5000

1600

(di/dt)on Turn-on Current Slope V DD=15V I D=2.5A

V i n=10V R ge n=10?

35A/μs Q i Total Input Charge V DD=12V I D=2.5A V i n=10V18nC SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min.Typ.Max.Unit V SD(?)Forward On Voltage I SD=2.5A V IN=0 1.6V

t r r(??) Q rr(??) I RRM(??)Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

I SD=2.5A di/dt=100A/μs

V DD=30V T j=25o C

(see test circuit,figure5)

150

0.3

5.7

μC

PROTECTION

Symbol Parameter Test Conditions Min.Typ.Max.Unit

I lim Drain Current Limit V i n=10V V DS=13V

V i n=5V V DS=13V 3.5

3.5

t dl im(??)Step Response

Current Limit V i n=10V

V i n=5V

μs

T jsh(??)Overtemperature

Shutdown

150o C T j rs(??)Overtemperature Reset135o C

I gf(??)Fault Sink Current V i n=10V V DS=13V

V i n=5V V DS=13V 50

E as(??)Single Pulse

Avalanche Energy starting T j=25o C V DD=20V

V i n=10V R gen=1K?L=30mH

0.2J

(?)Pulsed:Pulse duration=300μs,duty cycle1.5%

(??)Parametes guaranteed by design/characteriz ation

VNP5N07

3/11

During normal operation,the Input pin is electrically connected to the gate of the internal power MOSFET.The device then behaves like a standard power MOSFET and can be used as a switch from DC to50KHz.The only difference from the user’s standpoint is that a small DC current(I iss)flows into the Input pin in order to supply the internal circuitry.

The device integrates:

-OVERVOLTAGE CLAMP PROTECTION: internally set at70V,along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.

-LINEAR CURRENT LIMITER CIRCUIT:limits the drain current Id to Ilim whatever the Input pin voltage.When the current limiter is active, the device operates in the linear region,so power dissipation may exceed the capability of the heatsink.Both case and junction temperatures increase,and if this phase lasts long enough,junction temperature may reach the overtemperature threshold T jsh.-OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION:these are based on sensing the chip temperature and are not dependent on the input voltage.The location of the sensing element on the chip in the power stage area ensures fast,accurate detection of the junction temperature.Overtemperature cutout occurs at minimum150o C.The device is automatically restarted when the chip temperature falls below135o C.

-STATUS FEEDBACK:In the case of an overtemperature fault condition,a Status Feedback is provided through the Input pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of100?. The failure can be detected by monitoring the voltage at the Input pin,which will be close to ground potential.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit(with a small increase in R DS(on)).

PROTECTION FEATURES VNP5N07

4/11

Thermal Impedance

Output Characteristics

Static Drain-Source On Resistance vs Input Voltage Derating Curve

Transconductance

Static Drain-Source On Resistance

VNP5N07

5/11

Static Drain-Source On Resistance Capacitance Variations

Normalized On Resistance vs Temperature Input Charge vs Input Voltage Normalized Input Threshold Voltage vs Temperature

Normalized On Resistance vs Temperature

VNP5N07 6/11

Turn-on Current Slope

Turn-off Drain-Source Voltage Slope Switching Time Resistive Load Turn-on Current Slope

Turn-off Drain-Source Voltage Slope

Switching Time Resistive Load

VNP5N07

7/11

Switching Time Resistive Load Step Response Current Limit Current Limit vs Junction Temperature Source Drain Diode Forward Characteristics

VNP5N07 8/11

Fig.2:Unclamped Inductive Waveforms

Fig.3:Switching Times Test Circuits For Resistive Load Fig.4:Input Charge Test Circuit

Fig.1:Unclamped Inductive Load Test Circuits

Fig.5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig.6:Waveforms

VNP5N07

9/11

DIM.mm

inch MIN.TYP.

MAX.MIN.TYP.

MAX.A 4.40 4.600.1730.181C 1.23 1.320.0480.051D 2.40

2.72

0.094

0.107

D1 1.27

0.050

E 0.490.700.0190.027

F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067

G 4.95 5.150.1940.203G1 2.4 2.70.0940.106H210.0

10.40

0.393

0.409

L216.4

0.645

L413.014.00.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.2 6.60.2440.260L9 3.5 3.930.1370.154DIA.

3.75 3.85

0.147

0.151

D 1

Dia.

F 1

H 2

F 2

G 1

TO-220MECHANICAL DATA

P011C

VNP5N07

10/11

VNP5N07 Information furnished is believed to be accurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsabilit y for the consequences of use of such information nor for any infringemen t of patents or other rights of third parties which may results from its use.No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectr onics.Specifications mention ed in this publication are subject to change without notice.This publication supersede s and replaces all information previously supplied.

SGS-THOMSON Microelectr onics products are not auth orized for use as critical compon ents in life support devices or systems without expre ss written approval of SGS-THOMSON Microelectonics.

?1996SGS-THOMSON Microelectronics-Printed in Italy-All Rights Reserve d

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia-Brazil-Canada-China-France-Germany-Hong Kong-Italy-Japan-Korea-Malaysia-Malta-Morocco-The Netherlands-Singapore-Spain-Sweden-Switzerland-Taiwan-Thailand-United Kingdom-U.S.A

11/11