AO4407A中文资料

Parameter

Symbol

Typ Max t ≤ 10s 3240Steady State 6075Steady State

R θJL 1724Maximum Junction-to-Lead C

°C/W

Thermal Characteristics Units Maximum Junction-to-Ambient A °C/W Maximum Junction-to-Ambient A °C/W R θJA AO4407A

P-Channel Enhancement Mode Field Effect Transistor

AO4407A

Symbol

Min Typ

Max

Units BV DSS -30

V -10T J = 55°C

-50I GSS ±100nA V GS(th)-1.7-2.3

-3

V I D(ON)

-60

A

8.511T J =125°C

11.51510132738

g FS 21S V SD -0.7

-1V I S

-3

A C iss 2060

2600pF C oss 370pF C rss 295pF R g

2.4

3.6?Q g 30

39nC Q gs 4.6nC Q gd 10nC t D(on)11

ns t r 9.4ns t D(off)24ns t f 12ns t rr 3040ns Q rr

22

nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

V GS =0V, V DS =-15V, f=1MHz Input Capacitance Output Capacitance Turn-On Rise Time Turn-Off DelayTime V GS =-10V, V DS =-15V, R L =1.25?, R GEN =3?

Turn-Off Fall Time

Turn-On DelayTime m ?

SWITCHING PARAMETERS Gate Source Charge Gate Drain Charge Total Gate Charge V GS =-10V, V DS =-15V, I D =-12A

DYNAMIC PARAMETERS Maximum Body-Diode Continuous Current

Gate resistance

V GS =0V, V DS =0V, f=1MHz

V GS = -5V, I D = -10A

I S = -1A,V GS = 0V V DS = -5V, I D = -10A

V GS = -10V, I D = -12A R DS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

I DSS μA Gate Threshold Voltage V DS = V GS I D = -250μA V DS = -30V, V GS = 0V

V DS = 0V, V GS = ±25V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter Conditions

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I F =-12A, dI/dt=100A/μs

Drain-Source Breakdown Voltage On state drain current

I D = -250μA, V GS = 0V V GS = -10V, V DS = -5V V GS = -20V, I D = -12A

Reverse Transfer Capacitance I F =-12A, dI/dt=100A/μs

A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using < 300μs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.

F. The current rating is based on the t ≤ 10s thermal resistance rating.

G. E AR and I AR ratings are based on low frequency and duty cycles to keep T j =25C.Rev3: Jan 2008

AO4407A

AO4407A