UTC2SC1815中文资料

U T C 2S C 1815

NPN EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD

1

QW-R201-006,A

AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR

FEATURES

*Collector-Emitter voltage: BV CEO =50V

*Collector current up to 150mA * High hFE linearity

*complimentary to 2SA1015

1:EMITTER 2:COLLECTOR 3. BASE

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETER SYMBOL RATING UNIT

Collector-base voltage

V CBO 60 V Collector-emitter voltage V CEO 50 V Emitter-base voltage

V EBO 5 V Collector dissipation(Ta=25°C ) Pc 400 mW Collector current Ic 150 mA Base current

I B 50 mA

Junction Temperature T j 125 °C Storage Temperature

T STG -55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)

Parameter

Symbol Test conditions MIN TYP MAX UNIT

Collector cut-off current I CBO V CB =60V,I E 0 100 nA

Emitter cut-off current I EBO V EB =5V,Ic =0 100 nA

DC current gain(note) h FE1

h FE2 V CE =6V,Ic=2mA V CE =6V,Ic=150mA

7025 700 Collector-emitter saturation voltage V CE (sat) Ic =100mA,I B =

10mA 0.1 0.25 V Base-emitter saturation voltage V BE (sat) Ic =100mA,I B =

10mA 1.0 V Current gain bandwidth product

f T V CE =10V,Ic =

50mA 80 MHz Output capacitance

Cob V CB =10V,I E =0,f 1MHz 2.0 3.0 pF

Noise Figure

NF Ic=-0.1mA,V CE =6V

R G =10k ?,f=100Hz

1.0 1.0 dB

U T C 2S C 1815 NPN EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD

2

QW-R201-006,A

CLASSIFICATION OF hFE1

RANK Y G L RANGE 120-240 200-400 350-700

TYPICAL CHARACTERISTIC CURVES

Fig.1 Static characteristics

I c ,C o l l e c t o r c u r r e n t (m A )

100

Fig.2 DC current Gain

Fig.3 Base-Emitter on Voltage

Ic,Collector current (mA)10

10210110010-1S a t u r a t i o n v o l t a g e (m V )

10

110

210310

4Ic,Collector current (mA)10

010

110

2Collector-Base voltage (V)

10

10

10

10

10

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