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VN2222NC中文资料

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11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.wendangku.net/doc/dfa3aacf9ec3d5bbfd0a74aa.html. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

VN2222VN2224

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher-ent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

N-Channel Enhancement-Mode

VN2222NC中文资料

Vertical DMOS FETs

Package Options

Absolute Maximum Ratings

Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage

± 20V

Operating and Storage Temperature -55°C to +150°C

Soldering Temperature*

300°C

* Distance of 1.6 mm from case for 10 seconds.Applications

?Motor controls ?Converters ?Amplifiers ?Switches

?Power supply circuits

?Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Features

?Free from secondary breakdown ?Low power drive requirement ?Ease of paralleling

?Low C ISS and fast switching speeds ?Excellent thermal stability ?Integral Source-Drain diode ?High input impedance and high gain

High Reliability Devices

See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information.

VN2222NC中文资料

Ordering Information

Order Number / Package BV DSS /R DS(ON)I D(ON)BV DGS (max)(min)TO-9220-Pin C-Dip 220V 1.25? 5.0A —VN2222NC

240V

1.25?

5.0A

VN2224N3

元器件交易网http://www.wendangku.net/doc/dfa3aacf9ec3d5bbfd0a74aa.html

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VN2222NC中文资料

VN2222NC中文资料

Symbol Parameter

Min Typ Max Unit Conditions

BV DSS

V V GS = 0V, I D = 5mA V GS(th)Gate Threshold Voltage

1.0

3.0V V GS = V DS , I D = 5mA ?V GS(th)Change in V GS(th) with Temperature -4-5mV/°C V GS = V DS , I D = 5mA I GSS Gate Body Leakage

1

100nA V GS = ±20V, V DS = 0V I DSS

Zero Gate Voltage Drain Current

50μA V GS = 0V, V DS = Max Rating 5

mA V GS = 0V, V DS = 0.8 Max Rating T A = 125°C

I D(ON)ON-State Drain Current 2V GS = 5V, V DS = 25V 5

10V GS = 10V, V DS = 25V R DS(ON) 1.0 1.5V GS = 5V, I D = 2A 0.9 1.25V GS = 10V, I D = 2A ?R DS(ON)Change in R DS(ON) with Temperature 1.0

1.4

%/°C

V GS = 10V, I D = 2A G FS Forward Transconductance 1.0

2.2V DS = 25V, I D = 2A C ISS Input Capacitance

300350C OSS Common Source Output Capacitance 85150pF

C RSS Reverse Transfer Capacitance 2035t d(ON)Turn-ON Delay Time 615t r Rise Time

1625t d(OFF)Turn-OFF Delay Time 6590t f Fall Time

3060V SD Diode Forward Voltage Drop 0.8 1.0V V GS = 0V, I SD = 100mA t rr

Reverse Recovery Time

500

ns

V GS = 0V, I SD = 1A

Notes:

1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300μs pulse, 2% duty cycle.)

2.All A.C. parameters sample tested.

Package I D (continuous)*

I D (pulsed)Power Dissipation θjc θja I DR *I DRM @ T C = 25°C

°C/W °C/W TO-92

540mA

5.0A

1.0W

125

170

540mA

5.0A

*I D (continuous) is limited by max rated T j .

Thermal Characteristics

OUTPUT

INPUT

OUTPUT

10V

V DD

0V

0V

Switching Waveforms and Test Circuit

Electrical Characteristics (@ 25°C unless otherwise specified)

Drain-to-Source Breakdown Voltage A

?Static Drain-to-Source ON-State Resistance

?

V DD = 25V I D = 2A

R GEN = 10?

V GS = 0V, V DS = 25V f = 1 MHz

ns

VN2224240VN2222

220

VN2222NC中文资料

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1235 Bordeaux Drive, Sunnyvale, CA 94089TEL: (408) 744-0100 ? FAX: (408) 222-4895

http://www.wendangku.net/doc/dfa3aacf9ec3d5bbfd0a74aa.html

VN2222NC中文资料

11/12/01

?2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.

VN2222NC中文资料