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STW10NK80Z中文资料

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February 2003STP10NK80Z -STP10NK80ZFP

STW10NK80Z

N-CHANNEL 800V -0.78?-9A TO-220/TO-220FP/TO-247

Zener-Protected SuperMESH?Power MOSFET

s TYPICAL R DS (on)=0.78?

s EXTREMELY HIGH dv/dt CAPABILITY s 100%AVALANCHE TESTED s GATE CHARGE MINIMIZED

s VERY LOW INTRINSIC CAPACITANCES s

VERY GOOD MANUFACTURING REPEATIBILITY

DESCRIPTION

The SuperMESH?series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH?layout.In addition to pushing on-resistance significantly down,special care is tak-en to ensure a very good dv/dt capability for the most demanding applications.Such series comple-ments ST full range of high voltage MOSFET s in-cluding revolutionary MDmesh?products.

APPLICATIONS

s HIGH CURRENT,HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES

s DC-AC CONVERTERS FOR WELDING,UPS AND MOTOR DRIVE

ORDERING INFORMATION

TYPE V DSS R DS(on)I D Pw STP10NK80Z STP10NK80ZFP STW10NK80Z

800V 800V 800V

<0.90?<0.90?<0.90?

9A 9A 9A

160W 40W 160W

SALES TYPE MARKING PACKAGE PACKAGING

STP10NK80Z P10NK80Z TO-220TUBE STP10NK80ZFP P10NK80ZFP TO-220FP TUBE STW10NK80Z

W10NK80Z

TO-247

TUBE

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ABSOLUTE MAXIMUM RATINGS

( )Pulse width limited by safe operating area

(1)I SD ≤9A,di/dt ≤200A/μs,V DD ≤V (BR)DSS ,T j ≤T JMAX.(*)Limited only by maximum temperature allowed

THERMAL DATA

AVALANCHE CHARACTERISTICS

GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability,but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source.In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity.These integrated Zener diodes thus avoid the usage of external components.

Symbol Parameter

Value

Unit STP10NK80Z

STP10NK80ZFP

STW10NK80Z

V DS Drain-source Voltage (V GS =0)800V V DGR Drain-gate Voltage (R GS =20k ?)800V V GS Gate-source Voltage

±30V

I D Drain Current (continuous)at T C =25°C 99(*)9A I D Drain Current (continuous)at T C =100°C 66(*)6A I DM ( )Drain Current (pulsed)3636(*)36A P TOT Total Dissipation at T C =25°C 16040160W Derating Factor

1.28

0.32 1.28

W/°C V ESD(G-S)Gate source ESD(HBM-C=100pF,R=1.5K ?)4KV dv/dt (1)Peak Diode Recovery voltage slope 4.5V/ns

V ISO Insulation Withstand Voltage (DC)-2500-V T j T stg

Operating Junction Temperature Storage Temperature

-55to 150-55to 150

°C °C

TO-220

TO-220FP

TO-247Rthj-case Thermal Resistance Junction-case Max 0.78

3.1

0.78°C/W Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W T l

Maximum Lead Temperature For Soldering Purpose

300°C

Symbol Parameter

Max Value

Unit I AR Avalanche Current,Repetitive or Not-Repetitive (pulse width limited by T j max)

9A E AS

Single Pulse Avalanche Energy

(starting T j =25°C,I D =I AR ,V DD =50V)

290

Symbol Parameter

Test Conditions

Min.Typ.

Max.

Unit BV GSO

Gate-Source Breakdown Voltage

Igs=±1mA (Open Drain)

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ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF

DYNAMIC

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1.Pulsed:Pulse duration =300μs,duty cycle 1.5%.

2.Pulse width limited by safe operating area.

3.C oss eq.is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0to 80%V DSS .

Symbol Parameter

Test Conditions

Min.Typ.

Max.

Unit V (BR)DSS Drain-source

Breakdown Voltage I D =1mA,V GS =0

800

V I DSS Zero Gate Voltage

Drain Current (V GS =0)V DS =Max Rating

V DS =Max Rating,T C =125°C 150μA μA I GSS Gate-body Leakage Current (V DS =0)V GS =±20V

±10μA V GS(th)Gate Threshold Voltage V DS =V GS ,I D =100μA 3

3.75

4.5V R DS(on)

Static Drain-source On Resistance

V GS =10V,I D =4.5A

0.78

0.9

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit g fs (1)Forward Transconductance V DS =15V ,I D =4.5A

9.6S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =25V,f =1MHz,V GS =0

218020538pF pF pF C oss eq.(3)

Equivalent Output Capacitance

V GS =0V,V DS =0V to 640V

105

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t d(on)t r Turn-on Delay Time Rise Time

V DD =400V,I D =4.5A R G =4.7?V GS =10V

(Resistive Load see,Figure 3)3020ns ns Q g Q gs Q gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

V DD =640V,I D =9A,V GS =10V

7212.537

101nC nC nC

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t d(off)t f Turn-off Delay Time Fall Time

V DD =400V,I D =4.5A R G =4.7?V GS =10V

(Resistive Load see,Figure 3)6517ns ns t r(Voff)t f t c

Off-voltage Rise Time Fall Time

Cross-over Time

V DD =640V,I D =9A,R G =4.7?,V GS =10V

(Inductive Load see,Figure 5)

131025

ns ns ns

Symbol Parameter

Test Conditions

Min.

Typ.

Max.Unit I SD I SDM (2)Source-drain Current

Source-drain Current (pulsed)936A A V SD (1)Forward On Voltage I SD =9A,V GS =0 1.6

V t rr Q rr I RRM

Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current

I SD =9A,di/dt =100A/μs V DD =45V,T j =150°C (see test circuit,Figure 5)

6456.420

ns μC A

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Source-drain Diode Forward

Characteristics Normalized BVDSS vs Temperature

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Fig.5:Test Circuit For Inductive Load Switching And Diode Recovery Times

Fig.4:Gate Charge test Circuit

Fig.2:Unclamped Inductive Waveform

Fig.1:Unclamped Inductive Load Test

Circuit

Fig.3:Switching Times Test Circuit For Resistive

Load

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STP10NK80Z-STP10NK80ZFP-STW10NK80Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from

its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or

systems without express written approval of STMicroelectronics.

? The ST logo is a registered trademark of STMicroelectronics

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