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GLT440L16中文资料

GLT440L16

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug. 2000 (Rev.1.1)

G-Link Technology Corporation

G-Link Technology Corporation,Taiwan

Features :

Description :

? 262,144 words by 16 bits organization.? Fast access time and cycle time.? Dual CAS Input.

? Low power dissipation.

? Read-Modify-Write, RAS -Only Refresh,

CAS -Before-RAS Refresh, Hidden Refresh

and Test Mode Capability.? 512 refresh cycles per 8ms.

? Available in 40-Pin 400 mil SOJ and 40/44

Pin TSOP(II)

? Single +3.3V ±10% Power Supply.

? All inputs and Outputs are TTL compatible.? Extended Data-Out(EDO) Page Mode

operation.

The GLT440L16 is a 262,144 x 16 bit high-performance CMOS dynamic random access memory. The GLT44016 offers Fast Page mode with Extended Data Output, and has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. The GLT440L16 has symmetric address and accepts 512-cycle refresh in 8ms interval.

All inputs are TTL compatible. EDO Page Mode operation allows random access up to 512 x 16 bits within a page, with cycle time as short as 14ns.

The GLT440L16 is best suited for graphics, and DSP applications requiring high performance memories.

GLT440L16

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug. 2000 (Rev.1.1)

G-Link Technology Corporation

G-Link Technology Corporation,Taiwan

Pin Configuration :

Pin Descriptions:

GLT440L16SOJ Top View

TSOP(Type II)

Top View

GLT440L16

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug. 2000 (Rev.1.1)

G-Link Technology Corporation

G-Link Technology Corporation,Taiwan

Absolute Maximum Ratings*Capacitance*

Operating Temperature, T A (ambient)

.....................................-10°C to +70°C Storage Temperature(plastic)....-55°C to +150°C Voltage Relative to V SS ............….-1.0V to + 4.6V Short Circuit Output Current......................50mA Power Dissipation......................................1.0W

abversely affect device reliability.

Electrical Specifications

l CAS means UCAS

and LCAS .

l All voltages are referenced to GND.

l After power up, wait more than 100μs and then, execute eight CAS -before-RAS or RAS -only

refresh cycles as dummy cycles to initialize internal circuit.

Block Diagram :

GLT440L16

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug. 2000 (Rev.1.1)

G-Link Technology Corporation

G-Link Technology Corporation,Taiwan

1. These READ cycles may also be BYTE READ cycles (either UCAS or LCAS active).

2. These WRITE cycles may also be BYTE READ cycles (either UCAS or LCAS active).

3. EARLY WRITE only.

4. At least one of the two CAS signals must be active (UCAS or LCAS ).

GLT440L16

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug. 2000 (Rev.1.1)

G-Link Technology Corporation

G-Link Technology Corporation,Taiwan

DC and Operating Characteristics (1-2)

1.I CC is dependent on output loading when the device output is selected. Specified I CC (max.) is measured with

the output open.

2.I CC is dependent upon the number of address transitions specified I CC (max.) is measured with a maximum of one transition per address cycle in random Read/Write and EDO Fast Page Mode.

3.Specified V IL (min.) is steady state operation. During transitions V IL (min.) may undershoot to –0.3V for a period not to exceed 20ns. All AC parameters are measured with V IL (min.)≥V SS and V IH (max.)≤V CC .

AC Characteristics

GLT440L16

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug. 2000 (Rev.1.1)

G-Link Technology Corporation

G-Link Technology Corporation,Taiwan

T A = 0°C to 70°C , V CC = 3.3 V ± 10% V IH /V IL = 2.0/0.8V , V OH /V OL = 2.0/0.8V

GLT440L16

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug. 2000 (Rev.1.1)

G-Link Technology Corporation

G-Link Technology Corporation,Taiwan

AC Characteristics

GLT440L16

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug. 2000 (Rev.1.1)

G-Link Technology Corporation

G-Link Technology Corporation,Taiwan

Notes:

1. Measure with a load equivalent to one TTL inputs and 50 pF.

2. Assumes that t RCD ≤ t RCD (max.). If t RCD is greater than t RCD (max.), access time will be t AA dominant.

3. Assumes that t RAD ≤ t RAD (max.). If t RAD is greater than t RCD (max.), access time will be controlled by t CAC .

4. Either t RRH or t RCH must be satisfied for a Read Cycle.

5. Access time is determined by the longest of t CAA , t CAC and t CPA .

6. Assumes that t RAD ≥ t RAD (max.).

7. Operation within the t RAD (max.) limit ensures that t RAC (max.) can be met. t RAD (max.) is specified as a reference point only. If t RAD is greater than the specified t RAD (max.) limit, the access time is controlled by t CAA and t CAC .

8. t WCS , t RWD , t AWD and t CWD are not restrictive operating parameters. 9. t WCS (min.) must be satisfied in an Early Write Cycle.

10. t DS and t DH are referenced to the latter occurrence of CAS of WE .

t T is measured between V IH (min.) and V IL (max.). AC-measurements assume t T = 1.5 ns.

GLT440L16

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug. 2000 (Rev.1.1)

G-Link Technology Corporation

G-Link Technology Corporation,Taiwan

Read Cycle

Don't Care

V IH-

V IL-

RAS

V IH-V IL-

CAS

V IH-V IL-

Address

V IH-V IL-

V OH-V OL-

Early Write Cycle NOTE : D OUT = Open

V IH-V IL-

RAS

V V CAS

V V Address

V V WE

V V OE

V IH-V IL-DQ

Don't Care

GLT440L16

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug. 2000 (Rev.1.1)

G-Link Technology Corporation

G-Link Technology Corporation,Taiwan

Late Write Cycle (OE Controlled Write) NOTE : D OUT = Open

V IH-V IL-

RAS

V V CAS

V V Address

V V WE

V V V IH-V IL-

Don't Care

Read - Modify - Write Cycle

V IH-V IL-

RAS

V IH-V IL-

Address

V IH-V IL-

V I/OH-V I/OL-

Don't Care

GLT440L16

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug. 2000 (Rev.1.1)

G-Link Technology Corporation

G-Link Technology Corporation,Taiwan

Fast Page Read Cycle

V IH-V IL-

RAS

V V V V Address

V V WE

V V OE

V V

Don't Care

DATA-UOT

Fast Page Write Cycle NOTE : D OUT = Open

V IH-V IL-

RAS

V V CAS

V V Address

V V WE

V V OE

V V Don't Care

GLT440L16

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug. 2000 (Rev.1.1)

G-Link Technology Corporation

G-Link Technology Corporation,Taiwan

Fast Page Mode Late Write Cycle

V IH-V IL-

RAS

V V CAS

V V Address

V V WE

V V OE

V V Don't Care

Fast Page Read - Modify - Write Cycle

V IH-V IL-

RAS

V V CAS

Don't Care

DATA-OUT

DATA-IN

DATA-OUT

DATA-IN

V IH-V IL-

Address

V IH-V IL-

V I/OH-V I/OL-

GLT440L16

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug. 2000 (Rev.1.1)

G-Link Technology Corporation

G-Link Technology Corporation,Taiwan

CAS Before RAS Refresh Cycle

V IH-V IL-

RAS

V IH-V IL-

CAS

RAS -Only Refresh Cycle

V IH-V IL-

RAS

V IH-V IL-

Address

V IH-

V IL-

Hidden Refresh Cycle ( Read )

V IH-V IL-

RAS

V V CAS

V V Address

V V WE

V V OE

V V Don't Care

GLT440L16

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug. 2000 (Rev.1.1)

G-Link Technology Corporation

G-Link Technology Corporation,Taiwan

Hidden Refresh Cycle ( Write ) NOTE : D OUT =Open

V IH-V IL-

RAS

V V CAS

V V Address

V V V V OE

V V Don't Care

GLT440L16

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug. 2000 (Rev.1.1)

G-Link Technology Corporation

G-Link Technology Corporation,Taiwan

CAS - Before RAS Refresh Counter Test Cycle

V IH-

V IL-RAS V IH-V IL-

CAS Don't Care

DATA-IN

DATA-OUT V IH-V IL-Address V IH-

V IL-V IH-

V IL-OE V OH-

V OL-

DQ V IH-

V IL-WE V IH-

V IL-OE V IH-

V IL-DQ V IH-

V IL-WE V IH-

V IL-

OE V I/OH-

V I/OL-

GLT440L16

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug. 2000 (Rev.1.1)

G-Link Technology Corporation

G-Link Technology Corporation,Taiwan

Ordering Information

Part Number

SPEED POWER FEATURE

PACKAGE

GLT440L16-35J435ns Normal EDO 40L 400mil SOJ GLT440L16-40J440ns Normal EDO 40L 400mil SOJ GLT440L16-50J450ns Normal EDO 40L 400mil SOJ

GLT440L16-35TC 35ns Normal EDO 44L 400mil TSOP GLT440L16-40TC 40ns Normal EDO 44L 400mil TSOP GLT440L16-50TC

50ns

Normal

EDO

44L 400mil TSOP

Note : C ùCDROM , H ùHDD.Example :

1.GLT710008-15T 1Mbit(128Kx8)15ns 5V SRAM PDIP(300mil)Package type.

2.GLT44016-40J4 4Mbit(256Kx16)40ns 5V DRAM SOJ(400mil)Package type.

GLT440L16

256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

Aug. 2000 (Rev.1.1)

G-Link Technology Corporation

G-Link Technology Corporation,Taiwan

Package Information

40/44 Lead Thin Small Outline Package SOJ

40/44 Lead Thin Small Outline Package TSOP(Type II)