MMBTA44中文资料

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors

MMBTA44 TRANSISTOR (NPN)

FEATURES

Power dissipation

P CM: 0.35 W (T amb=25℃) Collector current

I CM: 0.2 A Collector-base voltage

V (BR)CBO : 400 V

Operating and storage junction temperature range T J , T stg : -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage V(BR)CBO Ic= 100μA, I E =0 400 V Collector-emitter breakdown voltage V(BR)CEO I C = 1mA , I B =0 400 V Emitter-base breakdown voltage V(BR)EBO I E =100μA, I C =0 5 V Collector cut-off current I CBO V CB =400V, I E =0 0.1 μA Collector cut-off current I CEO V CE =400V 5 μA Emitter cut-off current

I EBO V EB = 4V, I C =0 0.1 μA H FE(1)

V CE =10V, I C =10 mA

80

300

H FE(2) V CE =10V, I C =1mA 70 DC current gain

H FE(3)

V CE =10V, I C =100 mA

60

V CE (sat) I C =10 mA, I B =1mA 0.2 V

Collector-emitter saturation voltage

V CE (sat) I C =50 mA, I B =5mA 0.3

V Base-emitter sataration voltage

V BE (sat) I C =10 mA, I B = 1 mA

0.75

V

Transition frequency

f T

V CE =20V, I C =10mA

f =30MHz

50 MHz

MARKING 3D

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