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SWD-109中文资料

V5

Features

?High Speed CMOS Technology

?Single Channel

?Positive Voltage Control

?Low Power Dissipation

?Low Cost Plastic SO-8 Package

Description

The SWD-109 is a single channel driver used to translate TTL control inputs into gate control voltages for GaAs FET microwave switches and attenuators. High speed analog CMOS technology is utilized to achieve low power dissipation at moderate to high speeds, encompassing most microwave switching applications. The output HIGH level is optionally 0 to +2.0V (relative to GND) to optimize the intermodulation products of the control devices at low frequencies.

SWD-109中文资料

Functional Schematic

Ordering Information

Part Number Package

SWD-109 PIN Bulk Packaging

SWD-109TR 1000 piece reel Note: Reference Application Note M513 for reel size information.

Pin No. Function Pin No. Function

1 Output A 5 Vee

2 GND 6 Vopt

3 Vcc 7 GND

4 C1, Logic 8 Output B Pin Configuration

Truth Table

Input

C1 A B Logic “0” V EE V OPT

Logic “1” V OPT V EE

Outputs

V5 Guaranteed Operating Ranges

Symbol Parameter 1Unit Min. Typ. Max.

V CC Positive DC Supply Voltage V 4.5 5.0 5.5

V EE Negative DC Supply Voltage V -8.5 -5.0 -4.5

V OPT2 Optional DC Output Supply Voltage V 0 1.0 2.0 V OPT-V EE Negative Supply Voltage Range V 4.5 6.5 11.0 V CC-V EE Positive to negative Supply Range V 9.0 10.0 14.0 T A Operating Ambient temperature °C -40 +25 +85

I OH DC Output Current - High mA — — -1.0

I OL DC Output Current - Low mA — — 1.0

T rise, T fall Maximum Input Rise or Fall Time ns — — 500

1.All voltages are relative to GND.

2.V OPT is grounded for most applications. To improve the intermodulation performance and the 1 dB compression point of GaAs control

devices at low frequencies, V OPT can be increased to between 1.0 and 2.0V. The nonlinear characteristics of the GaAs control devices will approximate performance at 500 MHz. It should be noted that the control current is on the GaAs MMICs will increase when positive controls are applied.

Symbol Parameter Test Conditions Units Min. Typ. Max.

V IH Input High Voltage Guaranteed High Input Voltage V 2.0 — — V IL Input Low Voltage V — — 0.8 V IH Output High Voltage I OH = -1 mA V EE = Max V V OPT -0.1 — — V OL Output Low Voltage I OL = 1 mA V EE = Max V — — V EE +0.1

I IN Input Leakage Current V IN = V CC or GND V EE = Min μA — .01 10

I CC Quiescent Supply Current V CC = Max

V OPT = Min or Max

V EE = Min

V IN = V CC or GND

μA — — 100

? I CC Additional Supply Current, per

TTL Input pin V CC= Max V IN = V CC -2.1V mA — — 1.0 Guaranteed Low Input Voltage

DC Characteristics over Guaranteed Operating Range

V5

Symbol

Parameter

-55 to +25°C

<+85°C

<+125°C

Unit

T PLH Propagation Delay 22 25

30 ns T PHL Propagation Delay 22 25 30 ns T TLH Output Rising Transition Time 9.0 9.0 9.0 ns T THL Output Falling Transition Time 8.0 8.0 8.0 ns T skew Delay Skew, Output A to Output B

4.0 4.0 4.0 ns C IN Input Capacitance

10 10 10 pF C PDC Power Dissipation Capacitance 4 10 10 10 pF C PDE

Power Dissipation Capacitance 4

140

140

140

pF

AC Characteristics Over Guaranteed Operating Range 3

3.V CC =

4.5V, V OPT - V EE = min or max, V OPT = 0V, C L = 25 pF, Trise, Tfall = 6ns. These conditions represent the worst case for slow delays. 4.Total Power Dissipation is calculated by the following formula: PD = V CC 2fC PDC + (V OPT -V EE ) 2fC PDE

Switching Waveforms

Absolute Maximum Ratings 5

Symbol

Parameter

Min

Max

Unit

V CC Positive DC Supply Voltage

-0.5 7.0 V V EE Negative DC Supply

SWD-109中文资料

Voltage -9.0 0.5 V V OPT Optional DC Output Supply

Voltage -0.5 Vcc +0.5 V V OPT -V EE Output to Negative Supply

Voltage Range -0.5 11.0 V V CC -V EE Positive to Negative Supply

Voltage Range

-0.5 14.0 V V I DC Input Voltage -0.5 V CC +0.5 V I I DC Input Current -25 25 mA V O DC Output Voltage V EE –0.5 V OPT +0.5 V P D 6 Power Dissipation in Still Air

— 500 mW V O DC Output Current -25 25 mA T STG

Storage Temperature

-65

150

°C

5.All voltages are referenced to GND. All inputs and outputs

incorporate latch-up protection structures. 6.Derate -7 mW/°C from 65°C to 85°C.

V5

SWD-109中文资料