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NTK3043N中文资料

NTK3043N

Power MOSFET

20 V, 285 mA, N?Channel with ESD Protection, SOT?723

Features

?Enables High Density PCB Manufacturing

?44% Smaller Footprint than SC?89 and 38% Thinner than SC?89?Low V oltage Drive Makes this Device Ideal for Portable Equipment ?Low Threshold Levels, V GS(TH) < 1.3 V

?Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics

?Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels Using the Same Basic Topology ?These are Pb?Free Devices

Applications

?Interfacing, Switching

?High Speed Switching

?Cellular Phones, PDAs

MAXIMUM RATINGS (T J = 25°C unless otherwise stated)

Parameter Symbol Value Unit

Drain?to?Source Voltage V DSS20V Gate?to?Source Voltage V GS±10V

Continuous Drain Current (Note 1)Steady

State

T A = 25°C

I D

255

mA T A = 85°C185

t v 5 s T A = 25°C285

Power Dissipation (Note 1)Steady

State

T A = 25°C P D

440

mW t v 5 s545

Continuous Drain

Current (Note 2)

Steady

State T A = 25°C I D210

mA T A = 85°C155

Power Dissipation (Note 2)T A = 25°C P D310

Pulsed Drain Current t p = 10 m s I DM400mA

Operating Junction and Storage Temperature T J, T STG?55 to

150

°C Source Current (Body Diode) (Note 2)I S286mA

Lead Temperature for Soldering Purposes

(1/8” from case for 10 seconds)T L

260°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1.Surface?mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces)

2.Surface?mounted on FR4 board using the minimum recommended pad size.

https://www.wendangku.net/doc/e45303156.html,

Device Package Shipping?

ORDERING INFORMATION

NTK3043NT1G SOT?723*4000 / Tape & Reel

?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

NTK3043NT5G SOT?723*8000 / Tape & Reel *These packages are inherently Pb?Free.

THERMAL RESISTANCE RATINGS

Parameter

Symbol Max Unit

Junction?to?Ambient – Steady State (Note 3)R q JA 280°C/W Junction?to?Ambient – t = 5 s (Note 3)

R q JA 228Junction?to?Ambient – Steady State Minimum Pad (Note 4)

R q JA

400

3.Surface?mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

4.Surface?mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (T J = 25°C unless otherwise specified)

Parameter

Test Condition

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain?to?Source Breakdown Voltage V GS = 0 V, I D = 100 m A V (BR)DSS 20

V Drain?to?Source Breakdown Voltage Temperature Coefficient I D = 100 m A, Reference to 25°C V (BR)DSS /T J

mV/°C Zero Gate Voltage Drain Current

V GS = 0 V,V DS = 16 V

T J = 25°C I DSS

1m A T J = 125°C

10Gate?to?Source Leakage Current V DS = 0 V, V GS = ±5 V

I GSS 1

m A

ON CHARACTERISTICS (Note 3)Gate Threshold Voltage

V GS = V DS , I D = 250 m A V GS(TH)0.4

1.3V Gate Threshold Temperature Coefficient V GS(TH)/T J ?

2.4mV/°C

Drain?to?Source On Resistance

V GS = 4.5V, I D = 10 mA R DS(ON)

1.5 3.4W

V GS = 4.5V, I D = 255 mA 1.6 3.8V GS = 2.5 V, I D = 1 mA 2.4 4.5V GS = 1.8 V, I D = 1 mA 5.110V GS = 1.65 V, I D = 1 mA

6.8

Forward Transconductance

V DS = 5 V, I D = 100 mA g FS

0.275

S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance V GS = 0 V, f = 1 MHz, V DS = 10 V

C ISS 11pF

Output Capacitance

C OSS 8.3Reverse Transfer Capacitance

C RSS

2.7

SWITCHING CHARACTERISTICS, VGS= 4.5 V (Note 4)Turn?On Delay Time V GS = 4.5 V, V DD = 5 V, I D = 10 mA,

R G = 6 W

t d(ON)13ns

Rise Time

t r 15Turn?Off Delay Time t d(OFF)94Fall Time

t f

DRAIN?SOURCE DIODE CHARACTERISTICS Forward Diode Voltage

V GS = 0 V, I S = 286 mA

T J = 25°C V SD

0.83 1.2

T J = 125°C

0.69Reverse Recovery Time V GS = 0 V, V DD = 20 V, dISD/dt = 100 A/m s,

I S = 286 mA

t RR 9.1ns

Charge Time t a 7.1Discharge Time

t b 2.0Reverse Recovery Charge

Q RR 3.7

nC 5.Pulse Test: pulse width v 300 m s, duty cycle v 2%

6.Switching characteristics are independent of operating junction temperatures

0.1

I D , D R A I N C U R R E N T (A M P S )

R D S (o n ), D R A I N ?T O ?S O U R C E R E S I S T A N C E (W )

?50

?25

150

Figure 5. On?Resistance Variation with

Temperature T J , JUNCTION TEMPERATURE (°C)75

R D S (o n ), D R A I N ?T O ?S O U R C E R E S I S T A N C E

Figure 6. Drain?to?Source Leakage Current

vs. Voltage

V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)

151020

125

100

50.2

0.3

V SD , SOURCE?TO?DRAIN VOLTAGE (VOLTS)

Figure 9. Diode Forward Voltage vs. Current

0510

C , C A P A C I T A N C E (p F )

PACKAGE DIMENSIONS

DIM MIN NOM MAX MILLIMETERS A 0.450.500.55b 0.150.210.27b10.250.310.37C 0.070.120.17D 1.15 1.20 1.25E 0.750.800.85

e 0.40 BSC

H 1.15 1.20 1.25L

0.150.200.25

0.0180.0200.0220.00590.00830.01060.0100.0120.0150.00280.00470.00670.0450.0470.0490.030.0320.034

0.016 BSC

0.0450.0470.0490.00590.00790.0098

MIN NOM MAX INCHES

E NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198

2.CONTROLLING DIMENSION: MILLIMETERS.

3.MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.

ǒmm inches

ǔSCALE 20:1

SOT?723CASE 631AA?01

ISSUE B

*For additional information on our Pb?Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION