DS100151(IXGH10N300)
High Voltage IGBT
CES I C90= 10A V CE(sat)
≤ 3.5V
Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified Min. Typ. Max.BV CES I C = 250μA, V GE = 0V 3000V V GE(th)I C
= 250μA, V CE = V GE
3.0
5.0
V
I CES V CE = 0.8 ? V CES, V GE = 0V
25μA T J = 125°C 500 μA I GES V CE = 0V, V GE = ±20V ±100 nA
V CE(sat)
I C = 10A, V GE = 15V 3.5 V I C
= 30A
5.2 V
Symbol Test Conditions
Maximum Ratings V CES T J = 25°C to 150°C
3000V V CGR T J = 25°C to 150°C, R GE = 1M Ω 3000
V V GES Continuous ±20V V GEM Transient
±30
V I C25T C = 25°C 18A I C90T C = 90°C 10A I CM
T C = 25°C, 1ms 40
A
SSOA V GE = 20V, T VJ = 125°C, R G = 50Ω I CM = 32A (RBSOA) Clamped Inductive Load @ ≤ 1250 V P C T C = 25°C
100
W T J -55 ... +150
°C T JM 150
°C T stg -55 ... +150
°C
T L
Maximum Lead Temperature for Soldering 300°C
T SOLD 1.6 mm (0.062in.) from Case for 10s 260 °C M d Mounting Torque 1.13/10
Nm/lb.in.
Weight
6
g
For Capacitor Discharge Applications
Features
High Peak Current Capability Low Saturation Voltage
Low Gate Drive Requirement
Molding Epoxies Meet UL 94 V-0 Flammability Classification
Applications
Capacitor Discharge
Pulser Circuits
Advantages
High Power Density
Easy to Mount
G = Gate
C = Collector E = Emitter TAB = Collector
TO-247 AD
(TAB)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions (T J = 25°C, Unless Otherwise Specified)fs I C = 20A, V CE C(ON) V GE = 15V, V CE ies oes V CE = 25V, V GE res Q g(on)Q ge I C = 10A, V GE Q gc Note
1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
2. Additional provisions for lead-to-lead voltage isolation are required at V CE
> 1200V.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
Fig. 1. Output Characteristics
8101214
161820I C - A m p e r e s
Fig. 7. Transconductance
3456
78
g f s - S i e m e n s
Fig. 12. Resistive Turn-on Rise Time
vs. Junction Temperature
200240280320360
r - N a n o s e c o n d s
R G = 50?
V GE = 15V V CE = 1250V