Infineon-SIGC81T120R2CS_L7161T-DS-v02_00-en

SIGC81T120R2CS

IGBT Chip in NPT-technology

This chip is used for: ? IGBT Modules

FEATURES:

? 1200V NPT technology 175μm chip ? low turn-off losses ? short tail current

? positive temperature coefficient ? easy paralleling

? integrated gate resistor

Applications:

? drives, SMPS, resonant

applications

Chip Type

V CE I Cn Die Size

Package Ordering Code SIGC81T120R2CS 1200V 50A 9.08 X 8.98 mm 2

sawn on foil

Q67050-A4050-A001

MECHANICAL PARAMETER: Raster size 9.08 X 8.98 Emitter pad size 8 x (2.6 x 1.78) Gate pad size 1.46 x 0.8 Area total / active 81.5 / 63.5

mm 2

Thickness 180 μm Wafer size 150 mm Flat position

90 grd

Max.possible chips per wafer

167 pcs Passivation frontside Photoimide Emitter metallization 3200 nm Al Si 1%

Collector metallization 1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond electrically conductive glue or solder

Wire bond

Al, <500μm Reject Ink Dot Size

? 0.65mm ; max 1.2mm

Recommended Storage Environment

store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C

SIGC81T120R2CS

MAXIMUM RATINGS : Parameter

Symbol Value Unit Collector-emitter voltage, T j =25 °C V CE 1200

V DC collector current, limited by T jmax I C 1 )

A Pulsed collector current, t p limited by T jmax I c p u l s 150 A Gate emitter voltage

V GE ±20 V Operating junction and storage temperature

T j , T s t g

-55 ... +150

°C

1 )

depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), T j =25 °C, unless otherwise specified: Value

Parameter

Symbol Conditions min. typ. max. Unit

Collector-emitter breakdown voltage V (BR)CES V GE =0V , I C =3mA 1200 Collector-emitter saturation voltage V CE(sat) V GE =15V, I C =50A 2.7 3.2 3.7 Gate-emitter threshold voltage V GE(th) I C =2mA , V GE =V CE 4.5 5.5 6.5 V Zero gate voltage collector current I CES V CE =1200V , V GE =0V 6 μA Gate-emitter leakage current I GES V CE =0V , V GE =20V

300 nA Integrated gate resistor

R Gint

5

7

? ELECTRICAL CHARACTERISTICS (tested at component): Value

Parameter Symbol Conditions min. typ. max. Unit Input capacitance C i s s - 3.3 Output capacitance

C o s s - 0.5 Reverse transfer capacitance

C r s s

V C E =25V, V GE =0V, f =1MHz

-

0.22

nF

SWITCHING CHARACTERISTICS (tested at component), Inductive Load Value

Parameter Symbol Conditions 1) min. typ. max. Unit Turn-on delay time t d(on) - 60 Rise time

t r - 50 Turn-off delay time t d (o f f ) - 400 Fall time

t f

T j =125°C V C C =600V, I C =50A, V GE =-15/15V, R G = 15?

-

60

ns

1)

values also influenced by parasitic L- and C- in measurement and package.

SIGC81T120R2CS CHIP DRAWING:

SIGC81T120R2CS

FURTHER ELECTRICAL CHARACTERISTICS:

This chip data sheet refers to the

device data sheet Eupec FP50R12KS4C DESCRIPTION:

AQL 0,65 for visual inspection according to failure catalog

Electrostatic Discharge Sensitive Device according to MIL-STD 883

Test-Normen Villach/Prüffeld

Published by

Infineon Technologies AG,

Bereich Kommunikation

St.-Martin-Strasse 53,

D-81541 München

? Infineon Technologies AG 2002

All Rights Reserved.

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