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Infineon-SIGC81T120R2CS_L7161T-DS-v02_00-en

Infineon-SIGC81T120R2CS_L7161T-DS-v02_00-en

SIGC81T120R2CS

Infineon-SIGC81T120R2CS_L7161T-DS-v02_00-en

Edited by INFINEON Technologies AI PS DD HV3, L 7161-T, Edition 2, 03.09.2003

IGBT Chip in NPT-technology

This chip is used for: • IGBT Modules

FEATURES:

• 1200V NPT technology 175µm chip • low turn-off losses • short tail current

• positive temperature coefficient • easy paralleling

• integrated gate resistor

Applications:

• drives, SMPS, resonant

applications

Chip Type

V CE I Cn Die Size

Package Ordering Code SIGC81T120R2CS 1200V 50A 9.08 X 8.98 mm 2

sawn on foil

Q67050-A4050-A001

MECHANICAL PARAMETER: Raster size 9.08 X 8.98 Emitter pad size 8 x (2.6 x 1.78) Gate pad size 1.46 x 0.8 Area total / active 81.5 / 63.5

mm 2

Thickness 180 µm Wafer size 150 mm Flat position

90 grd

Max.possible chips per wafer

167 pcs Passivation frontside Photoimide Emitter metallization 3200 nm Al Si 1%

Collector metallization 1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond electrically conductive glue or solder

Wire bond

Al, <500µm Reject Ink Dot Size

∅ 0.65mm ; max 1.2mm

Recommended Storage Environment

store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C

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