Power MOSFET
IRF820, SiHF820
Vishay Siliconix
FEATURES
?Dynamic dV/dt Rating ?Repetitive Avalanche Rated ?Fast Switching ?Ease of Paralleling ?Simple Drive Requirements ?Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.V DD = 50 V, starting T J = 25 °C, L = 60 mH, R G = 25 Ω, I AS = 2.5 A (see fig. 12).
c.I SD ≤ 2.5 A, dI/dt ≤ 50 A/μs, V DD ≤ V DS , T J ≤ 150 °C.
d. 1.6 mm from cas
e.
PRODUCT SUMMARY
V DS (V)500
R DS(on) (Ω)V GS = 10 V
3.0
Q g (Max.) (nC)24Q gs (nC) 3.3Q gd (nC)13Configuration
Single
TO-220
G
D
S
ORDERING INFORMATION
Package TO-220Lead (Pb)-free IRF820PbF SiHF820-E3 SnPb
IRF820SiHF820
ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted
ARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS
500V
Gate-Source Voltage V GS ± 20 Continuous Drain Current V GS at 10 V
T C = 25 °C I D
2.5A T C = 100 °C
1.6Pulsed Drain Current a I DM 8.0
Linear Derating Factor
0.40W/°C Single Pulse Avalanche Energy b E AS 210mJ Repetitive Avalanche Current a I AR 2.5 A Repetitive Avalanche Energy a E AR 5.0mJ Maximum Power Dissipation T C = 25 °C
P D 50W
Peak Diode Recovery dV/dt c
dV/dt 3.5
V/ns Operating Junction and Storage Temperature Range T J , T stg
- 55 to + 150
°C Soldering Recommendations (Peak Temperature)for 10 s 300d Mounting Torque
6-32 or M3 screw
10lbf · in 1.1
N · m * Pb containing terminations are not RoHS compliant, exemptions may apply
IRF820, SiHF820
Vishay Siliconix
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
ARAMETER SYMBOL TY
.MAX.UNIT
Maximum Junction-to-Ambient R thJA -62°C/W Case-to-Sink, Flat, Greased Surface R thCS 0.50-Maximum Junction-to-Case (Drain)
R thJC
- 2.5
IRF820, SiHF820
Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T C
= 25 °C Fig. 2 - Typical Output Characteristics, T C = 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
IRF820, SiHF820 Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
IRF820, SiHF820
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
IRF820, SiHF820
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test
IRF820, SiHF820
Vishay Siliconix Array Fig. 14 -For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see https://www.wendangku.net/doc/e09443327.html,/ppg?91059.
Disclaimer Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
元器件交易网https://www.wendangku.net/doc/e09443327.html,