英飞凌IGBT损耗计算工具软件

284580185.xls

IGBT Power Simulation for Infineon IGBT modules V7.6b March 2014module selection for 3-phase inverter applications average losses for sinusoidal output current

limits:

DC link voltage Vdc [V] 900900RMS current Irms [A]500500frequency f0 [Hz]

5050switching frequency fs [Hz] 20002000max. junction temperature Tj [°C] 125125case temperature Tc [°C]8080modulation factor m 1.00 1.00cos φ

1.00

1.00

operation up to Tj=150°C allowed for FZ600R17KE4 !

Selected voltage class [V]

1700select a module:

select a housing:

static IGBT losses [W]461dynamic IGBT losses [W]225S

687

static diode losses [W]39dynamic diode losses [W]

96

S

135

diagram based on typical device data for Tj=125°C

how to read the diagram:

The cross point between the blue (or red) solid line and the blue (or red) dotted line delivers the highest allowed IGBT (or diode) RMS phase leg current at the given operation conditions.

average losses for sinusoidal output current at 2000 Hz switching frequency

FZ600R17KE4

phase leg current [Arms]

application

parameters:

simulation parameters:

0 ≤ m ≤ 4/π0 V ≤ Vdc ≤ 4320 V

a v e r a g e l o s s e s P a v [W ]

Please specify your inverter application in the green layered fields:

-1 ≤ cos φ ≤ 1

1 Hz ≤ f0 ≤ 1000 Hz 5 x f0 ≤ fs ≤ 10000 x f0

-40 °C ≤ Tj ≤ 150°C -40 °C ≤ Tc ≤ Tj 0200

400

600

800

1000

1200

1400

1600

100

200

300

400

500

600

700

800

Losses (IGBT) / W

Losses (diode) / W

Losses per switch (IGBT + diode) / W

max. losses (IGBT) @ Tcase=80°C max. losses (diode) @ Tcase=80°C

FZ600R17KE4

all housings