IRF1407PBF中文资料
Parameter
Max.
Units
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 130 I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 92 A I DM
Pulsed Drain Current 520P D @T C = 25°C Power Dissipation 330W Linear Derating Factor 2.2W/°C V GS Gate-to-Source Voltage
± 20V E AS Single Pulse Avalanche Energy 390
mJ I AR Avalanche Current
See Fig.12a, 12b, 15, 16
A E AR Repetitive Avalanche Energy mJ dv/dt Peak Diode Recovery dv/dt 4.6
V/ns T J Operating Junction and
-55 to + 175T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )°C
Mounting Torque, 6-32 or M3 screw
10 lbf?in (1.1N?m)
HEXFET ? Power MOSFET
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET ? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Absolute Maximum Ratings
Description
06/30/04
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O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating
O 175°C Operating Temperature O Fast Switching
O
Repetitive Avalanche Allowed up to Tjmax
Benefits
Typical Applications
O Integrated Starter Alternator
O 42 Volts Automotive Electrical Systems O
Lead-Free
AUTOMOTIVE MOSFET
TO-220AB
PD - 95485
IRF1407PbF
Parameter
Typ.
Max.
Units
R θJC Junction-to-Case
–––0.45R θCS Case-to-Sink, Flat, Greased Surface 0.50–––°C/W
R θJA
Junction-to-Ambient
–––
62
Thermal Resistance
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Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11). Starting T J = 25°C, L = 0.13mH
R G = 25?, I AS = 78A. (See Figure 12). I SD ≤ 78A, di/dt ≤ 320A/μs, V DD ≤ V (BR)DSS , T J ≤ 175°C
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Notes:
C oss eff. is a fixed capacitance that gives the same charging time
as C oss while V DS is rising from 0 to 80% V DSS .
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
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Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)110
100
1000
I D , D r a i n -t o -S o u r c e C u r r e n t (A )
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
110
100
1000
I D , D r a i n -t o -S o u r c e C u r r e n t (A )
V GS , Gate-to-Source Voltage (V)
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
V DS , Drain-to-Source Voltage (V)
100
1000
10000
100000
C , C a p a c i t a n c e (p F )
0.0
1.0
2.0
3.0
V SD , Source-toDrain Voltage (V)
0.10
1.00
10.00
100.00
1000.00I S D , R e v e r s e D a i n C u r r e n t (A )
1
10
100
1000
V DS , Drain-toSource Voltage (V)
1
10
100
1000
10000
I D , D r a i n -t o -S o u r c e C u r r e n t (A
)
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Fig 9. Maximum Drain Current vs.
Case Temperature
V V d(on)
r
d(off)
f
V DD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
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V
DS
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12a. Unclamped Inductive Test Circuit
I
V DD
Fig 14. Threshold Voltage vs. Temperature
T J , Temperature ( °C )
V G S (t h ) G a t e t h r e s h o l d V o l t a g e (V )
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Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:(For further info, see AN-1005 at https://www.wendangku.net/doc/e910259224.html,)1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax . This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. P D (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche).
6. I av = Allowable avalanche current.
7. ?T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25°C in Figure 15, 16). t av = Average time in avalanche. D = Duty cycle in avalanche = t av ·f
Z thJC (D, t av ) = Transient thermal resistance, see figure 11)
P D (ave) = 1/2 ( 1.3·BV·I av ) = D T/ Z thJC
I av = 2D T/ [1.3·BV·Z th ]E AS (AR) = P D (ave)·t av
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
0100
200
300
400
E A R , A v a l a n c h e E n e r g y (m J )
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Peak Diode Recovery dv/dt Test Circuit
V DD
* Reverse Polarity of D.U.T for P-Channel
V GS
*** V GS = 5.0V for Logic Level and 3V Drive Devices Fig 17. For N-channel HEXFET ? power MOSFETs
IRF1407PbF
9
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawings please refer to the IR website at:
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