BSP298中文资料

SIPMOS ? Small-Signal Transistor

? N channel

? Enhancement mode ? Avalanche rated ? V GS(th)

= 2.1 ... 4.0 V

Pin 1Pin 2Pin 3Pin 4G

D

S

D

Type

V DS I D R DS(on)Package Marking

BSP 298400 V 0.5 A

3 ?

SOT-223BSP 298

Type Pb-free Tape and Reel Information BSP 298

Yes

E6327

Maximum Ratings Parameter

Symbol

Values

Unit

Continuous drain current T A = 26 °C

I D

0.5

A

DC drain current, pulsed T A = 25 °C

I Dpuls

2

Avalanche energy, single pulse I D = 1.35 A, V DD = 50 V, R GS = 25 ?L = 125 mH, T j = 25 °C

E AS

130

mJ

Gate source voltage V GS ± 20

V Power dissipation T A = 25 °C

P tot

1.8

W

? Pb-free lead plating; RoHS compliant

Maximum Ratings

Parameter Symbol Values Unit Chip or operating temperature T j -55 ... + 150°C Storage temperature T stg -55 ... + 150 Thermal resistance, chip to ambient air R thJA≤ 70K/W Therminal resistance, junction-soldering point 1)R thJS≤ 10

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 55 / 150 / 56

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Electrical Characteristics, at T j = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min.typ.max.

Static Characteristics

Drain- source breakdown voltage V GS = 0 V, I D = 0.25 mA, T j = 0 °C V(BR)DSS

400--

V

Gate threshold voltage V GS=V DS, I D = 1 mA V GS(th)

2.1 3 4

Zero gate voltage drain current

V DS = 400 V, V GS = 0 V, T j = 25 °C V DS = 400 V, V GS = 0 V, T j = 125 °C I DSS

-

-

10

0.1

100

1

μA

Gate-source leakage current V GS = 20 V, V DS = 0 V I GSS

- 10 100

nA

Drain-Source on-state resistance V GS = 10 V, I D = 0.5 A R DS(on)

- 2.2 3

?

Electrical Characteristics, at T j = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min.typ.max.

Dynamic Characteristics

Transconductance

V DS≥ 2 *I D * R DS(on)max, I D = 0.5 A g fs

0.5 1.2-

S

Input capacitance

V GS = 0 V, V DS = 25 V, f = 1 MHz C iss

- 300 400

pF

Output capacitance

V GS = 0 V, V DS = 25 V, f = 1 MHz C oss

- 50 75

Reverse transfer capacitance

V GS = 0 V, V DS = 25 V, f = 1 MHz C rss

- 20 30

Turn-on delay time

V DD = 30 V, V GS = 10 V, I D = 0.3 A R GS = 50 ?t d(on)

- 10 15

ns

Rise time

V DD = 30 V, V GS = 10 V, I D = 0.3 A R GS = 50 ?t r

- 25 40

Turn-off delay time

V DD = 30 V, V GS = 10 V, I D = 0.3 A R GS = 50 ?t d(off)

- 30 40

Fall time

V DD = 30 V, V GS = 10 V, I D = 0.3 A R GS = 50 ?t f

- 20 30

Electrical Characteristics, at T j = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min.typ.max.

Reverse Diode

Inverse diode continuous forward current T A = 25 °C I S

-- 0.5

A

Inverse diode direct current,pulsed T A = 25 °C I SM

-- 2

Inverse diode forward voltage V GS = 0 V, I F = 1 A, T j = 25 °C V SD

- 0.95 1.2

V

Reverse recovery time

V R = 100 V, I F=l S, d i F/d t = 100 A/μs t rr

- 300-

ns

Reverse recovery charge

V R = 100 V, I F=l S, d i F/d t = 100 A/μs Q rr

- 2.5-

μC

Power dissipation P tot = ?(T A )

20

40

60

80

100

120

°C

160

T A 0.0 0.2 0.4 0.6 0.8

1.0

1.2 1.4 1.6 W

2.0 P tot

Drain current I D = ?(T A )

parameter: V GS ≥ 10 V

20

40

60

80

100

120

°C

160

T A

0.00

0.05 0.10 0.15 0.20

0.25

0.30

0.35 0.40 0.45 A

0.55 I D

Safe operating area I D =f(V DS )parameter : D = 0, T C

=25°C

Transient thermal impedance Z th JA = ?(t p )

D = t p / T

10 10 10 10 10 10 10 10 thJC

10 10 10 10 10 10 10 10 10

0 s

Typ. output characteristics I D = ?(V DS )

parameter: t p = 80 μs , T j = 25 °C

12345678V 10V DS

I D

l

Typ. drain-source on-resistance R DS (on) = ?(I D )

parameter: t p

= 80 μs, T j = 25 °C

0.000.100.200.300.40A 0.60

I D

R DS (on)

Typ. transfer characteristics I D = f (V GS )parameter: t p = 80 μs

1

2

3

4

5

6

7

8

V

10

0.0 0.2

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

A 2.6 I D

Typ. forward transconductance g fs = f (I D )parameter: t p = 80 μs,

0.00.40.8 1.2 1.6A

2.2

0.0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

S 2.6 g fs

Drain-source on-resistance R DS (on) = ?(T j )

parameter: I D = 0.5 A, V GS = 10 V

-60

-20

20

60

100

°C

160

T j

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

6.5

?

7.5

R DS (on)

typ 98%

Gate threshold voltage V GS (th) = ?(T j )

parameter: V GS = V DS , I D = 1 mA

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8

3.2 3.6

4.0

V 4.6 V GS(th)

-60

-20

20

60100°C 160

T j

2%

typ 98%

Typ. capacitances

C = f (V DS )

parameter:V GS =0V, f = 1 MHz

51015202530V

40-2

10 -1

10 0 10 1

10 nF

C

C rss

C iss

C oss

Forward characteristics of reverse diode I F = ?(V SD

)

parameter: T j

, t p = 80 μs

10 10 10 10 I F

0.0

0.40.8 1.2 1.6 2.0 2.4V 3.0

Avalanche energy E AS = ?(T j )parameter: I D = 1.35 A, V DD = 50 V R GS = 25 ?, L = 125 mH

20

40

60

80

100

120

°C

160

T j 0 10 20 30 40 50 60 70 80 90 100 110 120 mJ 140 E AS

Drain-source breakdown voltage V (BR)DSS = ?(T j )

-60

-20

20

60

100

°C

160

T j

360 370 380 390 400 410 420 430 440 450

460

V 480 V (BR)DSS

Safe operating area I D =f(V DS )parameter : D = 0.01, T C =25°C