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HAT2226R中文资料

HAT2226R

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1466-0100

Rev.1.00

Jul 18, 2006

Features

? Low on-resistance

? Low drive current

? High density mounting

Outline

Absolute Maximum Ratings

(Ta = 25°C)

Item Symbol

Unit

Ratings

Drain to source voltage V DSS 600 V

Gate to source voltage V GSS±30 V

Drain current I D 0.1 A

Drain peak current I D (pulse)Note1 0.4 A

Body-drain diode reverse drain current I DR 0.1 A

Body-drain diode reverse drain peak current I DR (pulse)Note1 0.4 A

Channel dissipation Pch Note2 1.5 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%

2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s

Electrical Characteristics

(Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown voltage V (BR)DSS 600 — — V I D = 10 mA, V GS = 0 Zero gate voltage drain current I DSS — — 1 μA V DS = 600 V, V GS = 0 Gate to source leak current I GSS — — ±0.1 μA V GS = ±30 V, V DS = 0 Gate to source cutoff voltage V GS(off) 3.0 — 5.0 V V DS = 10 V, I D = 1 mA

Static drain to source on state

resistance R DS(on) — 35 52 ? I D = 50 mA, V GS = 10 V Note3 Input capacitance Ciss — 25 — pF Output capacitance Coss — 4 — pF

Reverse transfer capacitance Crss — 0.4 — pF

V DS = 25 V

V GS = 0 f = 1 MHz Turn-on delay time t d(on) — 34 — ns Rise time t r — 16 — ns

Turn-off delay time t d(off) — 57 — ns

Fall time t f — 320 — ns

I D = 50 mA

V GS = 10 V R L = 6000 ? Rg = 10 ? Total gate charge Qg — 3.1 — nC Gate to source charge Qgs — 0.5 — nC

Gate to drain charge Qgd — 2.3 — nC V DD = 480 V

V GS = 10 V I D = 100 mA Body-drain diode forward voltage V DF — 0.79 1.35 V I F = 100 mA, V GS = 0 Note3 Body-drain diode reverse

recovery time t rr — 175 — ns I F = 100 mA, V GS = 0

di F /dt = 100 A/μs

Notes: 3. Pulse test

Package Dimensions

Ordering Information

Part Name Quantity Shipping Container

HAT2226R-EL-E 2500

pcs Taping

Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.

https://www.wendangku.net/doc/e411126947.html, RENESAS SALES OFFICES

Refer to "https://www.wendangku.net/doc/e411126947.html,/en/network" for the latest and detailed information.

Renesas Technology America, Inc.

450 Holger Way, San Jose, CA 95134-1368, U.S.A

Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501

Renesas Technology Europe Limited

Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.

Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900

Renesas Technology (Shanghai) Co., Ltd.

Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120

Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898

Renesas Technology Hong Kong Ltd.

7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong

Tel: <852> 2265-6688, Fax: <852> 2730-6071

Renesas Technology Taiwan Co., Ltd.

10th Floor, No.99, Fushing North Road, Taipei, Taiwan

Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999

Renesas Technology Singapore Pte. Ltd.

1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632

Tel: <65> 6213-0200, Fax: <65> 6278-8001

Renesas Technology Korea Co., Ltd.

Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea

Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145

Renesas Technology Malaysia Sdn. Bhd

Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia

Tel: <603> 7955-9390, Fax: <603> 7955-9510